ETC1 GB-PT333B21C Phototransistor Datasheet

GB-PT333 SERIES
Globe Technology Component
DESCRIPTION:
Phototransistor
(5mm)
PACKAGE DIMENSIONS
The PT333 series consists of a NPN silicon phototransistor encapsulated in blue
transparent, dark blue or water clear plastic package.
The dark blue plastic package which cuts the visible light is suitable for the detection
of infrared application.
Unit: mm
Tol: +/- 0.2mm
5.9
φ5.0
8.6
o
ABSOLUTE MAXIMUM RATINGS: (Ta=25 C)
1.0
1.0 Max.
Max
Parameter
100mW
Power Dissipation
30V
Collector-Emitter Voltage
5V
Emitter-Collector Voltage
20mA
Collector Current
-40oC To +85oC
Operating Temperature Range
-55oC To +100oC
Storage Temperature Range
o
Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds
25.4 Min.
0.5
1.0
2.54
c
NOTES : 1. All dimensions are in millimeters.
2. Lead spacing is measured where the leads emerge from the package.
3. Protuded resin under flange is 1.5 mm (0.059") Max.
b
e
o
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 C)
Part No.
Lens Color
GB-PT333A21C
Water Clear
GB-PT333A21BT
Blue Transparent
GB-PT333A21DB
Dark Blue
Range of
Spectral
Bandwidth
λ 0.5 (nm)
CollectorEmitter
Saturation
Voltage
Collector
Dark
Current
ID (nA)
Typ
Typ
Max
Max
Min
400~1200
0.4
100
980
Water Clear
GB-PT333A22BT
Blue Transparent
GB-PT333A22DB
Dark Blue
980
400~1200
0.4
Water Clear
GB-PT333B21BT
Blue Transparent
860
Dark Blue
400~1200
Water Clear
GB-PT333B22BT
Blue Transparent
GB-PT333B22DB
Dark Blue
860
400~1200
Typ
Max
Typ
0.70 1.30 1.90
+20
+20
1.08 3.08 5.23
0.4
0.70 1.30 1.90
100
840~1200
GB-PT333B22C
Angular
Response
∆θ(Deg)
1.40 4.00 6.80
100
840~1200
GB-PT333B21C
On State
Collector
Current
IC (on)
0.54 1.00 1.46
840~1200
GB-PT333A22C
GB-PT333B21DB
Wave Length
of Peak
Sensitivity
λp (nm)
+20
0.54 1.00 1.46
0.4
0.70 2.00 3.40
100
+20
0.54 1.54 2.62
840~1200
o
TESTING CONDITION FOR EACH PARAMETER (Ta=25 C)
Parameter
Symbol
Unit
Collector-Emitter Breakdown Voltage
VBR CEO
V
Emitter-Collector Breakdown Voltage
VBR ECO
V
Collector-Emitter Saturation Voltage
VCE (SAT)
V
Collector Dark Current
ID
nA
Rise Time
TR
µs
Fall Time
TF
µs
IC(ON)
mA
∆θ
Deg
On State Collector Current
Angular Response
Test Condition
Ic=100µA
Ee=0mW/cm2
IE=100µA
Ee=0mW/cm2
IC=0.1mA
H=2.5mW/cm2
VCE=10V
Ee=0m/W/cm2
VCC=5V
IC=1mA
RL=100Ω
VCE=5V
Ee=1mW/cm2
λ=940nm
0o
10o
20o
30o
40o
1.0
0.9
50o
0.8
60o
70o
0.7
80o
90o
0.5
0.3
0.1
0.2
0.4
0.6
SPATIAL DISTRIBUTION
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