HFT150-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HFT150-28 is Designed for .112x45° L A FEATURES: Ø.125 NOM. FULL R C • PG = 16 dB min. at 150 W/30 MHz • IMD3 = -28 dBc max. at 150 W (PEP) • Omnigold™ Metalization System B E H D G F I J MAXIMUM RATINGS ID 16 A V(BR)DSS 65 V VGS ± 40 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 PDISS TJ O O -65 C to +200 C O T STG -65 C to +150 C θ JC 0.60 OC/W SYMBOL .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K O CHARACTERISTICS C E 300 W @ TC = 25 C MAXIMUM .125 / 3.18 B O K L ORDER CODE: ASI10616 TC = 25 OC NONETEST CONDITIONS V(BR)DSS VGS = 0 V IDSS VGS = 0 V IGSS VGS = 20 V VGS VDS = 10 V VDS GFS UNITS 65 --- --- V VDS = 28 V --- --- 0.5 mA VDS = 0 V --- --- 1.0 µA ID = 100 mA 1.0 --- 5.0 V VGS = 10 V ID = 10 A --- --- 1.5 V VDS = 10 V ID = 5 A 3.5 --- --- mho VDS = 0 V --- 375 188 26 --- pF 15 W dB % CISS COSS CRSS VGS = 28 V PIN GPS η VDD = 28 V f = 175 MHz IDS = 100 mA MINIMUM TYPICAL MAXIMUM IDQ = 250 mA F = 1.0 MHz POUT = 150 W (PEP) 10 50 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.