BGS13SL9 Wideband RF SP3T Switch Data Sheet Revision 2.4, 2014-05-27 Power Management & Multimarket Edition May 27, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS13SL9 Revision History Previous Version: v2.3, 2014-02-13 Page Subjects (major changes since last revision) 10 Updated Temperature range (Table 6) 13 Updated Tape Drawing for TSLP-9-3 (Figure 5) Trademarks of Infineon Technologies AG AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM , DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM , OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM , ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM , TRENCHSTOPTM . Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM , THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2012-12-13 Data Sheet 3 Revision 2.4, 2014-5-27 BGS13SL9 Contents 1 Features 7 2 Product Description 7 3 Maximum Ratings 9 4 Operation Ranges 9 5 RF Characteristics 10 6 Pin Description and Package Outline 12 Data Sheet 4 Revision 2.4, 2014-5-27 BGS13SL9 List of Figures 1 2 3 4 5 BGS13SL9 Block Diagram . Package Outline . . . . . . Pin 1 Marking (top view) . . Footprint TSLP-9-3 . . . . . Tape Drawing for TSLP-9-3 Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 13 13 13 Revision 2.4, 2014-5-27 BGS13SL9 List of Tables 1 2 3 4 5 6 7 8 Ordering Information Truth Table . . . . . Maximum Ratings . Operation Ranges . RF Input Power . . . RF Characteristics . Mechanical Data . . Pin Description . . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 9 9 9 10 12 12 Revision 2.4, 2014-5-27 BGS13SL9 BGS13SL9 Wideband RF SP3T Switch 1 Features • 3 high-linearity TRx paths with power handling capability of up to 30 dBm • High switching speed, ideal for WLAN and Bluetooth applications • All ports fully bi-directional • No decoupling capacitors required if no DC applied on RF lines • Low insertion loss • Low harmonic generation • High port-to-port-isolation • 0.1 to 3 GHz coverage • High ESD robustness • On-chip control logic • Very small leadless and halogen free package TSLP-9-3 (1.15x1.15mm2 ) with super low height of 0.31mm • RoHS compliant package 2 Product Description The BGS13SL9 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.5 V to Vdd . The BGS13SL9 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.15 x 1.15 mm2 and a maximum height of 0.31 mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. Table 1: Ordering Information Type Package Marking BGS13SL9 TSLP-9-3 AA Data Sheet 7 Revision 2.4, 2014-5-27 BGS13SL9 RFin BGS13SL9 RF2 RF1 RF3 SP3T DGND VDD V2 V1 Decoder + ESD Protection Figure 1: BGS13SL9 Block Diagram Table 2: Truth Table Switched Paths V1 V2 Isolation / All Paths Open 0 0 RFin - RF1 1 0 RFin - RF2 0 1 RFin - RF3 1 1 Data Sheet 8 Revision 2.4, 2014-5-27 BGS13SL9 3 Maximum Ratings Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply Voltage VDD -0.5 – 5.5 V – Maximum DC-Voltage on Other Pins VDC -0.3 – 3.6 V – Storage Temperature Range TSTG -55 – 150 ◦ C – RF Input Power PRF _TRx – – 32 dBm – Junction Temperature Tj – – 125 ◦ C – VESD_HBM −1 – +1 kV – VESD_RFin −8 – +8 kV RFin versus GND, with ESD Capability Human Body Model 1) ESD Capability RFin Port 2) 27 nH shunt inductor 1) 2) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF). IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Unit Min. Typ. Max. Ambient Temperature TA -40 25 85 RF Frequency f 0.1 – Supply Voltage VDD 2.3 Control Voltage Low VCtrl_L -0.3 Control Voltage High VCtrl_H 1.5 ◦ Note / Test Condition C – 3 GHz – – 3.6 V – – 0.3 V – – VDD V VDD < 3.3 V Unit Note / Test Condition dBm – Table 5: RF Input Power Parameter RF Input Power (50Ω) Data Sheet Symbol PIn Values Min. Typ. Max. – – 30 9 Revision 2.4, 2014-5-27 BGS13SL9 5 RF Characteristics Table 6: RF Characteristics Test Conditions (unless otherwise specified): • Terminating port impedance: Z0 = 50 Ω • Temperature range: TA = -40 ... +85 ◦ C • Supply voltage: VDD = 2.3 ... 3.6 V • Input power: PIN = 0 dBm Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 0.24 0.35 0.55 dB 824 - 915 MHz 0.28 0.44 0.65 dB 1710 - 1910 MHz 0.30 0.50 0.80 dB 2170 - 2500 MHz 0.35 0.54 0.90 dB 2700 MHz 0.30 0.37 0.35 0.44 0.40 0.50 dB dB 824 - 915 MHz 1710 - 1910 MHz 0.40 0.50 0.60 dB 2170 - 2500 MHz 0.44 0.54 0.70 dB 2700 MHz 21 25 28 dB 824 - 915 MHz 15 18 24 dB 1710 - 1910 MHz 12 16 22 dB 2170 - 2500 MHz 12 14 20 dB 2700 MHz 32 37 44 dB 824 - 915 MHz 22 27 33 dB 1710 - 1910 MHz 19 24 29 dB 2170 - 2500 MHz 18 22 27 dB 2700 MHz 32 42 49 dB 824 - 915 MHz 24 31 36 dB 1710 - 1910 MHz 21 27 32 dB 2170 - 2500 MHz 20 26 31 dB 2700 MHz Insertion Loss All RF Ports IL 1 Insertion Loss All RF Ports IL Return Loss All RF Ports RL Isolation RFin to RF1/RF2/RF3 ISOIn−RFx RF1 to RF2 / RF2 to RF1 RF1 to RF3 / RF3 to RF1 RF2 to RF3 / RF3 to RF2 1 ISOPort−Port TA = +25 ◦ C, VDD = 3 V Data Sheet 10 Revision 2.4, 2014-5-27 BGS13SL9 Parameter Symbol Values Min. Typ. Max. – -80 -70 Unit Note / Test Condition dBc Pin = 27 dBm, 50 % Duty Cy- Harmonic Generation up to 12.75 GHz Any Path PHarm cle, 50Ω 1,2 Intermodulation Distortion in Rx Band IMD2 IMD2 – -110 -105 dBm Tx = 10 dBm, IMD3 IMD3 – -115 -105 dBm Interferer = -15 dBm, 50Ω Switching Time and Current Consumption RF Rise Time t10%−90% – 23 90 ns 10% - 90% of RF Signal Ctrl to RF Time tCtrl−RF – 95 250 ns 50% of Ctrl Signal to 90% of RF Signal Supply Current IDD – 140 270 µA – Control Current ICtrl – 1 10 µA – Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads. 1 TA = +25 ◦ C, VDD = 3 V 2 With external shunt L Data Sheet 11 Revision 2.4, 2014-5-27 BGS13SL9 6 Pin Description and Package Outline Table 7: Mechanical Data Parameter Symbol Value Unit X-Dimension X 1.15 ± 0.05 mm Y-Dimension Y 1.15 ± 0.05 mm Size Size 1.3225 mm2 Height H 0.31 +0.01/−0.02 mm Table 8: Pin Description Pin No. Name Pin Buffer Type Type Function 1 V1 I Control Pin 1 2 RF3 I/O RF-Port 3 3 RF1 I/O RF-Port 1 4 RFin I/O RF Input 5 RF2 I/O RF-Port 2 6 DGND GND Digital Ground 7 VDD PWR Power Supply 8 V2 I Control Pin 2 9 GND GND Ground Top view Bottom view 0.31 +0.01 -0.02 7 9 4 8 3 0.2 ±0.0351) Pin 1 marking 6 1 2 0.4 1) Dimension applies to plated terminals 1.15 ±0.05 5 0.2 ±0.0351) 0.4 1.15 ±0.05 2 x 0.4 = 0.8 0.05 MAX. 2 x 0.4 = 0.8 TSLP-9-3-PO V01 Figure 2: Package Outline Data Sheet 12 Revision 2.4, 2014-5-27 BGS13SL9 Figure 3: Pin 1 Marking (top view) 0.25 0.4 0.4 0.25 0.25 0.4 0.4 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSLP-9-3-FP V01 Figure 4: Footprint TSLP-9-3 Figure 5: Tape Drawing for TSLP-9-3 Data Sheet 13 Revision 2.4, 2014-5-27 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG