BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for applications requiring dual high voltage switching diodes. MARKING CODES: CJP or BAW101 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 300 V Peak Repetitive Reverse Voltage VRRM IF 300 V 200 mA IFRM IFSM 400 mA 4.5 A PD TJ, Tstg 350 mW -65 to +150 °C ΘJA 357 °C/W Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance UNITS ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=250V IR BVR VR=250V, TA=150°C IR=100μA VF IF=100mA CT trr UNITS 150 nA 50 μA 1.3 V VR=0, f=1.0MHz 5.0 pF IF=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns 300 V 0.9 R7 (8-February 2011) BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D2 4) Anode D1 MARKING CODES: CJP or BAW101 R7 (8-February 2011) w w w. c e n t r a l s e m i . c o m