Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ ㄹ Features General Description The MDS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1903 is suitable device for DC to DC converter and general purpose applications. 6(D) 7(D) 8(D) VDS = 100V ID = 3.3A @VGS = 10V RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.0V D 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 100 V VGSS ±20 V o TA=25 C Continuous Drain Current (1) o TA=70 C Pulsed Drain Current 3.3 ID IDM TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range A 2.6 12 A 2.5 PD W 1.6 EAS 21 TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 25 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun 2011 Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V MDS1903 Part Number Temp. Range MDS1903URH o -55~150 C Package Packing Rohs Status SOIC-8 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 2.0 3.0 Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 VGS = 10V, ID = 3A - 90 110 VGS = 6.0V, ID = 3A - 100 120 VDS = 10V, ID = 3A - 10 - - 8.8 - - 1.3 - - 2.1 - - 475 800 Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50.0V, ID = 3A, VGS = 10V VDS = 25.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss - 20 - Output Capacitance Coss - 60 - Turn-On Delay Time td(on) - 6.2 - - 7.1 - - 17.3 - - 6.1 - - 0.75 1.2 V - 32.0 - ns - 48.5 - nC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 3A , RG = 3.0Ω tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 3A, VGS = 0V IF = 3A, dl/dt = 100A/μs Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) EAS is tested at starting Tj = 25℃ , L = 1.0mH, IAS = 6.5A, VDD = 50V, VGS = 10V Jun 2011 Version 1.0 2 MagnaChip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V Ordering Information VGS = 10V 25 ID, Drain Current [A] Drain-Source On-Resistance [mΩ] 150 8.0V 20 5.0V 4.5V 15 4.0V 10 3.5V 5 140 130 120 VGS = 6.0V 110 100 VGS = 10V 90 80 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 70 5.0 0 5 10 VDS, Drain-Source Voltage [V] 20 25 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 200 2.4 ※ Notes : ※ Notes : 2.2 ID = 3.0A 1. VGS = 10 V 2. ID = 3.0 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 175 150 125 TJ = 25 ℃ 100 75 0.4 0.2 -50 50 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 25 ※ Notes : ※ Notes : VGS = 0V IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 20 15 TJ=25 ℃ 10 5 0 0 1 2 3 4 5 6 7 TJ=25 ℃ 0 10 0.3 8 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Jun 2011 Version 1.0 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V 30 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 3.0A VDS = 50V VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 600 6 4 Ciss 400 ※ Notes ; 200 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 2 10 1 10ms 0 100ms 1s -1 30 1 ℃ -2 10 -1 2 10s 100s DC Single Pulse TJ=Max rated TA=25 10 25 3 Operation in This Area is Limited by R DS(on) 10 20 4 1ms 10 15 Fig.8 Capacitance Characteristics ID, Drain Current [A] ID, Drain Current [A] Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 0 10 1 10 0 25 2 VDS, Drain-Source Voltage [V] 50 75 100 125 150 TA, Ambient Temperature [ ] ℃ Fig.10 Maximum Drain Current vs. Ambient Temperature Fig.9 Maximum Safe Operating Area 2 10 0.2 1 10 0.1 0.05 0.02 0 10 0.01 Zθ JC , Thermal Response D=0.5 single pulse -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jun 2011 Version 1.0 4 MagnaChip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V 800 10 MDS1903 – Single N-Channel Trench MOSFET 100V Package Dimension 8 Leads, SOIC Dimensions are in millimeters, unless otherwise specified Symbol Min Nom Max A - - 1.75 A(1) 0.10 - 0.25 B 0.31 - 0.51 C 0.10 - 0.25 D 4.9 BSC E 3.9 BSC e 1.27 BSC H 6.0 BSC L 0.40 - 1.27 a 0 - 8 h 0.250 - 0.500 L2(Gage plane) Jun 2011 Version 1.0 0.25 BSC 5 MagnaChip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun 2011 Version 1.0 6 MagnaChip Semiconductor Ltd.