万和兴电子有限公司 www.whxpcb.com AO4438 60V N-Channel MOSFET General Description Product Summary The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain A Current Pulsed Drain Current B Junction and Storage Temperature Range Maximum Junction-to-Lead Rev.5. 0: August 2013 C ±20 V ID 6.6 IDM 40 W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 8.2 TA=70°C TA=25°C Power Dissipation Maximum 60 RθJA RθJL www.aosmd.com Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W Page 1 of 4 AO4438 万和兴电子有限公司 www.whxpcb.com N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA Max 60 1 TJ=55°C 5 2 VGS=10V, ID=8.2A 2.3 nA 3 V 22 30 40 VGS=4.5V, ID=7.6A 20 27 24 TJ=125°C gFS Forward Transconductance VDS=5V, ID=8.2A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 0.74 1920 µA 100 16.3 Static Drain-Source On-Resistance Units V VDS=60V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 3 A 2300 pF VGS=0V, VDS=30V, f=1MHz 155 VGS=0V, VDS=0V, f=1MHz 0.65 0.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 47.6 58 nC Qg(4.5V) Total Gate Charge 24.2 30 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 116 VGS=10V, VDS=30V, ID=8.2A VGS=10V, VDS=30V, RL=3.6Ω, RGEN=3Ω pF 6 nC 14.4 nC 8.2 ns 5.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8.2A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=8.2A, dI/dt=100A/µs 53 Body Diode Reverse Recovery Time pF 29.7 ns 5.2 ns 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev.5. 0: August 2013 www.aosmd.com Page 2 of 4 AO4438 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 30 4V 10V 25 4.5V 6V VDS=5V 125°C 20 ID(A) ID (A) 20 VGS=3.5V 10 15 10 25°C 5 0 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3.5 4 Normalized On-Resistance 2.2 VGS=4.5V 20 18 VGS=10V 16 14 2 VGS=10V ID=8.2A 1.8 1.6 VGS=4.5V ID=7.6A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=8.2A 1.0E+00 40 125°C 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics 22 RDS(ON) (mΩ Ω) 2 30 25°C 1.0E-03 25°C 20 1.0E-02 1.0E-04 10 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.5. 0: August 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 AO4438 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 3500 10 VDS=30V ID=8.2A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10.0 RDS(ON) limited 100µs 30 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 10µs 1ms 1s 10s 30 20 10 TJ(Max)=150°C TA=25°C DC 0 0.1 0.1 1 10 100 0.001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 40 Power (W) ID (Amps) 100.0 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 Rev.5. 0: August 2013 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.aosmd.com 100 1000 Page 4 of 4