CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 100 Units V VGS ±20 V ID 55 A Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S IDM a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 220 A 83.3 W 0.55 W/ C TJ,Tstg -55 to 175 C Symbol Limit Units RθJC 1.8 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case This is preliminary information on a new product in development now Details are subject to change without notice . 1 Rev 1. 2011.Dev. http://www.cetsemi.com CED55N10/CEU55N10 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 100V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 16 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 25A Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 2 13 3790 pF 240 pF 140 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 50V, ID = 30A, VGS = 10V, RGEN = 5.6Ω 27 54 ns 9 18 ns ns 66 132 Turn-Off Fall Time tf 12 24 ns Total Gate Charge Qg 84 110 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 80V, ID = 20A, VGS = 10V 17 nC 19 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 25A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 55 A 1.2 V CED55N10/CEU55N10 100 VGS=10,9,8,7,6V 25 ID, Drain Current (A) ID, Drain Current (A) 30 20 15 10 VGS=4V 5 0 0 1 2 3 4 5 0 0 2 4 6 8 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 3000 2000 Coss 1000 Crss 0 5 10 15 20 25 2.6 2.2 ID=20A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C VGS, Gate-to-Source Voltage (V) Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C 20 6 4000 1.2 40 VDS, Drain-to-Source Voltage (V) 5000 1.3 60 TJ=125 C 6000 0 80 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=80V ID=20A 8 6 4 2 0 0 3 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED55N10/CEU55N10 15 30 45 60 75 10 10 10 90 2 10ms 100ms 1ms 1 DC TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 Single Pulse 10 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 3