ETL G2N7002 N - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s f e t Datasheet

Pb Free Plating Product
ISSUED DATE :2003/06/27
REVISED DATE :2006/01/17C
G2N7002
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
60V
4.5
500mA
Description
The G2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Tj, Tstg
-55 ~ +150
VDS
60
V
VGS
±20
V
VGSM
±40
V
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Continuous
Non-repetitive (tp
50us)
Continuous Drain Current
Pulsed Drain Current
(1)
(2)
Power Dissipation
Thermal Resistance ,Junction-to-Ambient
Electrical Characteristics (Tj = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Unit
ID
500
mA
IDM
800
mA
PD
225
mW
RthJA
556
/W
unless otherwise specified)
Symbol
Min.
BVDSS
60
Typ.
Max.
Unit
Test Conditions
-
-
V
VGS=0, ID=250uA
-
2.5
V
VDS=2.5V, ID=0.25mA
VGS(th)
1
Gate Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V, VDS=0
Zero Gate Voltage Drain Current
IDSS
-
-
1
uA
VDS=60V, VGS =0
ID(ON)
500
-
-
mA
VDS=7.5V, VGS=10V
-
-
5
On-State Drain Current
Static Drain-Source on-State Resistance
RDS(ON)
ID=50mA, VGS =5V
-
-
4.5
GFS
80
-
-
mS
Ciss
-
-
50
pF
Output Capacitance
Coss
-
-
25
pF
Reverse Transfer Capacitance
Crss
-
-
5
pF
Forward Transconductance
Input Capacitance
ID=500mA, VGS=10V
VDS>2 VDS(ON), ID=200mA
VDS=25V, VGS =0V, f=1MHz
(1)The Power Dissipation of the package may result in a continuous train current.
(2)Pulse Width
G2N7002
300us, Duty cycle
2%.
Page: 1/3
ISSUED DATE :2003/06/27
REVISED DATE :2006/01/17C
Characteristics Curve
G2N7002
Page: 2/3
ISSUED DATE :2003/06/27
REVISED DATE :2006/01/17C
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G2N7002
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