HMC863LP4E v02.0111 Typical Applications Features The HMC863LP4E is ideal for: Saturated Output Power: up to +27.5 dBm @ 15% PAE • Point-to-Point Radios • Point-to-Multi-Point Radios Amplifiers - Linear & Power - SMT High Output IP3: +33 dBm High Gain: 21.5 dB • VSAT 9 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz DC Supply: +6V @ 350mA • Military & Space No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm² Functional Diagram General Description The HMC863LP4E is a three stage GaAs pHEMT MMIC ½ Watt Power Amplifier which operates between 22 and 26.5 GHz. The HMC863LP4E provides 21.5 dB of gain, +27.5 dBm of saturated output power and 15% PAE from a +6V supply. High output IP3 makes the HMC863LP4E ideal for point-to-point and point-to-multi-point radio systems as well as VSAT applications. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into higher level assemblies. The HMC863LP4E can also be operated from a 5V supply with only a slight decrease in output power & IP3. Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 350mA [1] Parameter Min. Frequency Range Gain 19 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Typ. Max. 22 - 26.5 (IP3)[2] Total Supply Current (Idd) 22 Units GHz 21.5 dB 0.032 dB/ °C 11 dB 15 dB 24.5 dBm 27 dBm 33 350 dBm 380 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 350mA typical. [2] Measurement taken at +6V @ 350mA, Pout / Tone = +14 dBm 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Gain vs. Temperature 30 28 20 26 24 S21 S11 S22 0 -10 -20 22 20 16 -30 +25C +85C -40C 14 12 -40 20 21 22 23 24 25 26 27 28 22 29 23 FREQUENCY (GHz) 24 25 26 27 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) +25C +85C -40C -5 RETURN LOSS (dB) 9 18 -10 -15 -20 +25C +85C -40C -10 -15 -20 -25 -30 -35 -40 -25 22 23 24 25 26 22 27 23 25 26 27 26 27 P1dB vs. Supply Voltage 28 28 26 26 P1dB (dBm) P1dB (dBm) P1dB vs. Temperature 24 22 24 FREQUENCY (GHz) FREQUENCY (GHz) 24 6.0V 5.5V 5.0V 22 +25C +85C -40C 20 Amplifiers - Linear & Power - SMT 10 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss vs. Frequency 20 22 23 24 25 FREQUENCY (GHz) 26 27 22 23 24 25 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Psat vs. Temperature Psat vs. Supply Voltage 33 30 +25C +85C -40C Psat (dBm) 28 29 27 23 6.0V 5.5V 5.0V 22 22 23 24 25 26 27 22 23 FREQUENCY (GHz) 30 26 28 Psat (dBm) P1dB (dBm) 25 26 27 26 27 Psat vs. Supply Current (Idd) 28 24 300mA 350mA 400mA 22 24 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 26 300mA 350mA 400mA 24 20 22 22 23 24 25 26 27 22 23 FREQUENCY (GHz) 24 25 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +14 dBm Output IP3 vs. Supply Current, Pout/Tone = +14 dBm 38 36 36 IP3 (dBm) 38 34 32 +25C +85C -40C 30 34 32 300mA 350mA 400mA 30 28 28 22 23 24 25 FREQUENCY (GHz) 9-3 26 24 25 IP3 (dBm) Amplifiers - Linear & Power - SMT 9 Psat (dBm) 31 26 27 22 23 24 25 26 27 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +14 dBm Output IM3 @ Vdd = +5V 38 60 6.0V 5.5V 5.0V 36 50 32 30 20 30 10 28 0 22 23 24 25 26 27 5 6 7 8 9 10 FREQUENCY (GHz) 50 50 40 40 IM3 (dBc) IM3 (dBc) 60 30 30 13 14 15 16 17 18 19 20 16 17 18 19 20 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 20 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 10 12 Output IM3 @ Vdd = +6V 60 20 11 Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V 10 0 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 5 6 7 8 Pout/TONE (dBm) 9 10 11 12 13 14 15 Pout/TONE (dBm) Power Compression @ 25 GHz Reverse Isolation vs. Temperature 0 35 -10 Pout Gain PAE 30 REVERSE ISOLATION (dB) Pout (dBm), GAIN (dB), PAE (%) 9 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 25 20 15 10 5 -20 -30 +25C +85C -40C -40 Amplifiers - Linear & Power - SMT IM3 (dBc) IP3 (dBm) 40 34 -50 -60 -70 -80 -90 0 -15 -12 -9 -6 -3 0 INPUT POWER (dBm) 3 6 9 22 23 24 25 26 27 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Gain & Power vs. Supply Current @ 25 GHz Gain & Power vs. Supply Voltage @ 25 GHz 9-5 Gain (dB), P1dB (dBm), Psat (dBm) 32 Gain P1dB Psat 30 28 26 24 22 20 18 300 Gain P1dB Psat 30 28 26 24 22 20 18 320 340 360 380 400 5 5.2 5.4 5.6 5.8 6 Vdd (V) Idd (mA) Power Dissipation 4 POWER DISSIPATION (W) Amplifiers - Linear & Power - SMT 9 Gain (dB), P1dB (dBm), Psat (dBm) 32 3.5 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 3 2.5 2 1.5 1 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vd) 6.3V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +26 dBm +5.0 350 150 °C +5.5 350 +6.0 350 Continuous Pdiss (T= 85 °C) (derate 37 mW/°C above 85 °C) 2.52 W Thermal Resistance (channel to ground paddle) 26.9 C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 0, 150V Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 350mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Package Information Part Number Package Body Material Lead Finish HMC863LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H863 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Pin Descriptions Pin Number Function Description 1, 2, 4 - 7, 12 15, 17 - 19, 24 Package Bottom GND Ground pins and package bottom must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 8 - 11 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 20 Vd Drain bias for amplifier. External 100 pF, 0.1 µF and 4.7 µF bypass capacitors are required. 23 Vg Interface Schematic Amplifiers - Linear & Power - SMT 9 Gate control for PA. Adjust Vg to achieve recommended bias current. External 100 pF, 0.1 µF and 4.7 µF bypass capacitors are required. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-6 HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Evaluation PCB Amplifiers - Linear & Power - SMT 9 List of Materials for Evaluation PCB 130560 [1] Item Description J1 - J2 2.9 mm Connectors J3 - J4 DC Pins C1, C2 100 pF Capacitors, 0402 Pkg. C6 10 kpF Capacitor, 0402 Pkg C10 4.7 µF Capacitor, 0402 Pkg. U1 HMC863LP4E Power Amplifier PCB [2] 125559 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 9-7 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC863LP4E v02.0111 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Application Circuit Amplifiers - Linear & Power - SMT 9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-8