Hittite HMC863LP4E Gaas phemt mmic â½ watt power amplifier, 22 - 26.5 ghz Datasheet

HMC863LP4E
v02.0111
Typical Applications
Features
The HMC863LP4E is ideal for:
Saturated Output Power:
up to +27.5 dBm @ 15% PAE
• Point-to-Point Radios
• Point-to-Multi-Point Radios
Amplifiers - Linear & Power - SMT
High Output IP3: +33 dBm
High Gain: 21.5 dB
• VSAT
9
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
DC Supply: +6V @ 350mA
• Military & Space
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
Functional Diagram
General Description
The HMC863LP4E is a three stage GaAs pHEMT
MMIC ½ Watt Power Amplifier which operates between 22 and 26.5 GHz. The HMC863LP4E provides
21.5 dB of gain, +27.5 dBm of saturated output power and 15% PAE from a +6V supply. High output IP3
makes the HMC863LP4E ideal for point-to-point and
point-to-multi-point radio systems as well as VSAT applications. The RF I/Os are DC blocked and matched
to 50 Ohms for ease of integration into higher level
assemblies. The HMC863LP4E can also be operated
from a 5V supply with only a slight decrease in output
power & IP3.
Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 350mA [1]
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Typ.
Max.
22 - 26.5
(IP3)[2]
Total Supply Current (Idd)
22
Units
GHz
21.5
dB
0.032
dB/ °C
11
dB
15
dB
24.5
dBm
27
dBm
33
350
dBm
380
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 350mA typical.
[2] Measurement taken at +6V @ 350mA, Pout / Tone = +14 dBm
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Gain vs. Temperature
30
28
20
26
24
S21
S11
S22
0
-10
-20
22
20
16
-30
+25C
+85C
-40C
14
12
-40
20
21
22
23
24
25
26
27
28
22
29
23
FREQUENCY (GHz)
24
25
26
27
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
RETURN LOSS (dB)
+25C
+85C
-40C
-5
RETURN LOSS (dB)
9
18
-10
-15
-20
+25C
+85C
-40C
-10
-15
-20
-25
-30
-35
-40
-25
22
23
24
25
26
22
27
23
25
26
27
26
27
P1dB vs. Supply Voltage
28
28
26
26
P1dB (dBm)
P1dB (dBm)
P1dB vs. Temperature
24
22
24
FREQUENCY (GHz)
FREQUENCY (GHz)
24
6.0V
5.5V
5.0V
22
+25C
+85C
-40C
20
Amplifiers - Linear & Power - SMT
10
GAIN (dB)
RESPONSE (dB)
Broadband Gain &
Return Loss vs. Frequency
20
22
23
24
25
FREQUENCY (GHz)
26
27
22
23
24
25
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
9-2
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Psat vs. Temperature
Psat vs. Supply Voltage
33
30
+25C
+85C
-40C
Psat (dBm)
28
29
27
23
6.0V
5.5V
5.0V
22
22
23
24
25
26
27
22
23
FREQUENCY (GHz)
30
26
28
Psat (dBm)
P1dB (dBm)
25
26
27
26
27
Psat vs. Supply Current (Idd)
28
24
300mA
350mA
400mA
22
24
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
26
300mA
350mA
400mA
24
20
22
22
23
24
25
26
27
22
23
FREQUENCY (GHz)
24
25
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +14 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +14 dBm
38
36
36
IP3 (dBm)
38
34
32
+25C
+85C
-40C
30
34
32
300mA
350mA
400mA
30
28
28
22
23
24
25
FREQUENCY (GHz)
9-3
26
24
25
IP3 (dBm)
Amplifiers - Linear & Power - SMT
9
Psat (dBm)
31
26
27
22
23
24
25
26
27
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +14 dBm
Output IM3 @ Vdd = +5V
38
60
6.0V
5.5V
5.0V
36
50
32
30
20
30
10
28
0
22
23
24
25
26
27
5
6
7
8
9
10
FREQUENCY (GHz)
50
50
40
40
IM3 (dBc)
IM3 (dBc)
60
30
30
13
14
15
16
17
18
19
20
16
17
18
19
20
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
20
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
10
12
Output IM3 @ Vdd = +6V
60
20
11
Pout/TONE (dBm)
Output IM3 @ Vdd = +5.5V
10
0
0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
5
6
7
8
Pout/TONE (dBm)
9
10
11
12
13
14
15
Pout/TONE (dBm)
Power Compression @ 25 GHz
Reverse Isolation vs. Temperature
0
35
-10
Pout
Gain
PAE
30
REVERSE ISOLATION (dB)
Pout (dBm), GAIN (dB), PAE (%)
9
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
25
20
15
10
5
-20
-30
+25C
+85C
-40C
-40
Amplifiers - Linear & Power - SMT
IM3 (dBc)
IP3 (dBm)
40
34
-50
-60
-70
-80
-90
0
-15
-12
-9
-6
-3
0
INPUT POWER (dBm)
3
6
9
22
23
24
25
26
27
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
9-4
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Gain & Power vs.
Supply Current @ 25 GHz
Gain & Power vs.
Supply Voltage @ 25 GHz
9-5
Gain (dB), P1dB (dBm), Psat (dBm)
32
Gain
P1dB
Psat
30
28
26
24
22
20
18
300
Gain
P1dB
Psat
30
28
26
24
22
20
18
320
340
360
380
400
5
5.2
5.4
5.6
5.8
6
Vdd (V)
Idd (mA)
Power Dissipation
4
POWER DISSIPATION (W)
Amplifiers - Linear & Power - SMT
9
Gain (dB), P1dB (dBm), Psat (dBm)
32
3.5
23 GHz
24 GHz
25 GHz
26 GHz
27 GHz
3
2.5
2
1.5
1
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
6.3V
RF Input Power (RFIN)
Channel Temperature
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+26 dBm
+5.0
350
150 °C
+5.5
350
+6.0
350
Continuous Pdiss (T= 85 °C)
(derate 37 mW/°C above 85 °C)
2.52 W
Thermal Resistance
(channel to ground paddle)
26.9 C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 0, 150V
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 350mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
Package Information
Part Number
Package Body Material
Lead Finish
HMC863LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H863
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Pin Descriptions
Pin Number
Function
Description
1, 2, 4 - 7, 12 15, 17 - 19, 24
Package Bottom
GND
Ground pins and package bottom must be connected to
RF/DC ground.
3
RFIN
This pin is AC coupled and matched to 50 Ohms.
8 - 11
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
16
RFOUT
This pin is AC coupled and matched to 50 Ohms.
20
Vd
Drain bias for amplifier. External 100 pF, 0.1 µF and 4.7 µF
bypass capacitors are required.
23
Vg
Interface Schematic
Amplifiers - Linear & Power - SMT
9
Gate control for PA. Adjust Vg to achieve recommended
bias current. External 100 pF, 0.1 µF and 4.7 µF bypass
capacitors are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
9-6
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Evaluation PCB
Amplifiers - Linear & Power - SMT
9
List of Materials for Evaluation PCB 130560 [1]
Item
Description
J1 - J2
2.9 mm Connectors
J3 - J4
DC Pins
C1, C2
100 pF Capacitors, 0402 Pkg.
C6
10 kpF Capacitor, 0402 Pkg
C10
4.7 µF Capacitor, 0402 Pkg.
U1
HMC863LP4E Power Amplifier
PCB [2]
125559 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
9-7
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC863LP4E
v02.0111
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Application Circuit
Amplifiers - Linear & Power - SMT
9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
9-8
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