LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 150fA TYP. LOW PINCHOFF VP= 2V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature S1 -65° to +150°C +150°C Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS G1 D1 Drain to Source Voltage 40V -IG(f) Gate Forward Current 10mA -IG Gate Reverse Current 10µA 3 5 S2 D1 2 D2 -VDSO Maximum Power Dissipation Device Dissipation @ Free Air - Total G2 6 D2 1 S1 G1 7 G2 S2 22 X 20 MILS BOTTOM VIEW 40mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 5 10 20 40 40 |∆VGS1-2 /∆T| max. Drift vs. Temperature UNITS CONDITIONS µV/°C VDG= 10V, ID= 30µA TA=-55°C to +125°C |VGS1-2| max. Offset Voltage 5 5 10 15 15 mV VDG=10V -IGmax. Operating 1 1 1 1 3 pA -IGmax. High Temperature 1 1 1 1 3 nA TA= +125°C -IGSSmax. At Full Conduction 2 2 2 2 5 pA VDS= 0V -IGSSmax. High Temperature 5 5 5 5 10 nA TA= +125°C SYMBOL BVGSS CHARACTERISTICS Breakdown Voltage BVGGO ID= 30µA VGS= 20V MIN. 40 TYP. 60 MAX. -- UNITS V Gate-to-Gate Breakdown 40 -- -- V IG= 1nA ID= 0 I S= 0 Yfss TRANSCONDUCTANCE Full Conduction 70 300 500 µmho VDG= 10V VGS= 0 f= 1kHz Yfs Typical Operation 50 100 200 µmho VDG= 10V ID= 30µA f= 1kHz |Yfs1-2/Yfs| Mismatch -- 1 5 % IDSS DRAIN CURRENT Full Conduction 60 400 1000 µA VDG= 10V VGS= 0 |IDSS1-2/IDSS| Mismatch at Full Conduction -- 2 5 % VGS(off) or VP GATE VOLTAGE Pinchoff Voltage 0.6 2 4.5 V VDS= 10V ID= 1nA VGS Operating Range -- -- 4 V VDS= 10V ID= 30µA IGGO GATE CURRENT Gate-to-Gate Leakage -- 1 -- pA VGG=20V Linear Integrated Systems CONDITIONS VDS= 0 ID= 1nA 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL YOSS CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction YOS |YOS1-2| MIN. TYP. MAX. UNITS -- -- 5 µmho Operating -- 0.1 0.1 µmho Differential -- 0.01 0.1 µmho CONDITIONS VDG= 10V VGS= 0 VDG= 10V ID= 30µA COMMON MODE REJECTION CMR -20 log |∆VGS1-2/∆VDS| -- 90 -- dB ∆VDS= 10 to 20V ID= 30µA CMR -20 log |∆VGS1-2/∆VDS| -- 90 -- dB ∆VDS= 5 to 10V ID= 30µA VDS= 10V f= 100Hz VDG= 10V NBW= 1Hz VGS= 0 RG= 10MΩ NBW= 6Hz ID= 30µA f= 10Hz NOISE NF Figure -- -- 1 dB en Voltage -- 20 70 nV/√Hz CISS CAPACITANCE Input -- -- 3 pF VDS= 10V VGS= 0 f= 1MHz CRSS Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz CDD Drain-to-Drain -- -- 0.1 pF VDG= 20V ID= 30µA TO-71 P-DIP TO-78 0.320 (8.13) 0.290 (7.37) Six Lead 0.230 DIA. 0.209 0.195 DIA. 0.175 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B SEATING PLANE 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261