Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE05N10FP BVDSS ID @ VGS=10V, TC=25°C 100V RDSON(TYP) @ VGS=10V, ID=20A 109A 5.9mΩ RDSON(TYP) @ VGS=7V, ID=20A 6.2mΩ Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol Outline MTE05N10FP TO-220FP G：Gate D：Drain S：Source G D S Ordering Information Device MTE05N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) Pulsed Drain Current Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Avalanche Current Avalanche Energy @ L=1mH, ID=25A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS 100 ±30 109 77 60 300 ID (Note 1) IDM (Note 3) (Note 2) (Note 2) (Note 3) (Note 2) (Note 3) IDSM IAS EAS EAR (Note 1) PD (Note 1) (Note 2) (Note 2) PDSM Tj, Tstg Unit V A 11 8.8 25 323 20 200 100 2 1.3 -55~+175 mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c (Note 2) (Note 2) Rth,j-a Value 0.75 15 62.5 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 100 2.0 - 0.1 52 5.9 6.2 4.0 ±100 1 25 8.3 8.6 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±30V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55°C VGS =10V, ID=20A VGS =7V, ID=10A 116 27 37 37 35 90 24 5797 660 206 - 0.65 50 104 60 1 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *VSD *trr *Qrr - μA mΩ nC ID=20A, VDS=50V, VGS=10V ns VDS=50V, ID=20A, VGS=10V, RG=3Ω pF VGS=0V, VDS=30V, f=1MHz A V ns nC IS=1A, VGS=0V VGS=0V, IF=20A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 4/ 8 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 300 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V ID, Drain Current(A) 250 VGS=6V 200 150 VGS=5V 100 1.2 1 0.8 ID=250μA, VGS=0V 0.6 50 VGS=4V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=6V VGS=7V VGS=10V 10 1 1 Tj=25°C 0.8 0.6 0.4 Tj=150°C 0.2 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 90 ID=20A 80 70 60 50 40 30 20 10 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 5.9mΩ typ. 0 0 0 MTE05N10FP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 5/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss C oss 1000 Crss 1.4 1.2 1 ID=1mA 0.8 0.6 ID=250μA 0.4 0.2 100 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=50V ID=20A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 20 40 60 80 100 Total Gate Charge---Qg(nC) 120 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 140 RDS(ON) Limit ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10 μ s 100 100μ s 1ms 10 TC=25°C, Tj=175°C, VGS=10V,RθJC=0.75°C/W single pulse 1 10ms 100ms DC Silicon limit 120 100 80 60 40 Package limit 20 VGS=10V, RθJC=0.75°C/W 0 0.1 0.1 MTE05N10FP 1 10 100 VDS, Drain-Source Voltage(V) 1000 0 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 6/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 300 4500 VDS=10V Peak Transient Power (W) ID, Drain Current (A) 250 200 150 100 50 TJ(MAX) =175°C TC=25°C θ JC=0.75°C/W 4000 3500 3000 2500 2000 1500 1000 500 0 0 2 4 6 VGS, Gate-Source Voltage(V) 8 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.Rθ JC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=0.75 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 8/ 8 TO-220FP Dimension Marking: Device Name CYS E05N10 Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE05N10FP CYStek Product Specification