NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Colllector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25°C (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Note 1. The NTE268 is a discontinued device and no longer available. Note 2. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%. Note 3. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 50 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 10mA, Note 4 ICBO VCB = 50V, IE = 0, TJ = +150°C – – 20 µA ICES VCE = 50V, VBE = 0 – – 0.5 µA IEBO VEB = 13V, IC = 0 – – 100 nA hFE IC = 200mA, VCE = 5V 10000 – – IC = 1.5A, VCE = 5V 1000 – – ON Characteristics (Note 4) DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) IC = 1.5A, IB = 3mA – – 1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 1.5A, IB = 3mA – – 2.5 V VCB = 10V, IE = 0, f = 1MHz – – 10 pF – – 25 pF 1.0 – – Dynamic Characteristics Collector Capacitance NTE268 Ccb NTE269 High Frequency Current Gain |hfe| IC = 20mA, VCE = 5V, f = 100MHz Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. NTE268 C .380 (9.56) B .180 (4.57) .132 (3.35) Dia C E .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) NTE269 C .400 (10.16) Min B E E .100 (2.54) B C .100 (2.54)