Fairchild FQA170N06 60v n-channel mosfet Datasheet

QFET
TM
FQA170N06
60V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
•
170A, 60V, RDS(on) = 0.0056Ω @VGS = 10 V
Low gate charge ( typical 220 nC)
Low Crss ( typical 620 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
!
"
! "
"
"
G!
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
TO-3P
!
FQA Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQA170N06
60
Units
V
170
A
120
A
680
A
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
170
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
37.5
7.0
375
2.5
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 25
V
990
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Max
0.4
Units
°C/W
0.24
--
°C/W
--
40
°C/W
Rev. A1. May 2001
FQA170N06
May 2001
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.053
--
V/°C
IDSS
IGSSF
IGSSR
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 150°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.0045
0.0056
Ω
--
85
--
S
--
7200
9350
pF
--
3100
4000
pF
--
620
810
pF
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 85 A
gFS
Forward Transconductance
VDS = 30 V, ID = 85 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 85 A,
RG = 25 Ω
(Note 4, 5)
VDS = 48 V, ID = 170 A,
VGS = 10 V
(Note 4, 5)
--
85
180
--
700
1400
ns
--
260
530
ns
--
430
870
ns
--
220
290
nC
--
50
--
nC
--
100
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
170
A
ISM
--
--
680
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 170 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 170 A,
dIF / dt = 100 A/µs
(Note 4)
--
100
--
ns
--
315
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40µH, IAS = 170A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 170A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQA170N06
Electrical Characteristics
FQA170N06
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
10
2
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
175℃
1
10
25℃
-55℃
0
10
※ Notes :
1. VDS = 30V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
1
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics.
Figure 2. Transfer Characteristics.
7
IDR , Reverse Drain Current [A]
VGS = 10V
RDS(ON) [mΩ ],
Drain-Source On-Resistance
6
VGS = 20V
5
4
2
10
1
10
0
10
175℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
3
0
200
400
600
800
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage.
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
12
24000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
10
Capacitance [pF]
16000
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
12000
8000
Crss
4000
VGS, Gate-Source Voltage [V]
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 170A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics.
©2001 Fairchild Semiconductor Corporation
0
40
80
120
160
200
240
QG, Total Gate Charge [nC]
Figure 6. Gate -Charge Characteristics.
Rev. A1. May 2001
(Continued)
2.5
1.2
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQA170N06
Typical Characteristics
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 85 A
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature.
Figure 8. On-Resistance Variation
vs Temperature.
180
Operation in This Area
is Limited by R DS(on)
150
3
100μ s
10μ s
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
2
10
10 ms
DC
1
10
120
90
Limited by Package
60
※ Notes :
o
30
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
0
1
10
0
25
2
10
10
50
JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area.
100
125
150
175
Figure 10. Maximum Drain Current
vs Case Temperature.
D = 0 .5
10
※ N o te s :
1 . Z θ J C ( t ) = 0 . 4 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
-1
0 .2
0 .1
0 .0 5
PDM
0 .0 2
10
-2
t1
0 .0 1
Z
θ
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve.
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQA170N06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2001 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A1. May 2001
FQA170N06
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQA170N06
Package Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
©2001 Fairchild Semiconductor Corporation
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Rev. A1. May 2001
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2