Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE040N20P3 BVDSS ID RDS(ON)@VGS=10V, ID=28A RDS(ON)@VGS=6V, ID=10A 200V 50A 30.2mΩ(typ) 29.3mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE040N20P3 TO-247 G：Gate D：Drain S：Source G D S Ordering Information Device MTE040N20P3-0-UE-S Package TO-247 (Pb-free lead plating package) Shipping 30 pcs / tube, 10 tubes/ box , 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UE : 30 pcs / tube, 10 tubes/box, 10 boxes/carton Product rank, zero for no rank products Product name MTE040N20P3 CYStek Product Specification Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C Continuous Drain Current @ TC=100C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=2mH, IAS=14A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 200 ±20 50 35 200 14 196 30 300 150 -55~+175 Pd Tj, Tstg Unit V A mJ W C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.5 40 Unit C/W C/W Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTE040N20P3 Min. Typ. Max. Unit 200 2.0 - 30.2 29.3 44 4.0 ±100 1 25 40 46 - V V nA - 98.5 14.3 38.4 32 29 70 17 - μA mΩ S Test Conditions VGS=0V, ID=250μA VDS =VGS, ID=250μA VGS=±20V, VDS=0V VDS =200V, VGS =0V VDS =160V, VGS =0V, TJ=125C VGS =10V, ID=28A VGS =6V, ID=10A VDS =15V, ID=28A nC ID=28A, VDS=160V, VGS=10V ns VDS=100V, ID=28A, VGS=10V, RG=1.8Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 4467 392 341 0.6 - - 0.81 79 300 50 200 1.2 - Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 3/8 pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns nC IS=28A, VGS=0V IF=28A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTE040N20P3 CYStek Product Specification Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 120 90 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 150 VGS=5V 60 VGS=4.5V 30 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=4V 0.4 0 0 3 6 9 12 VDS, Drain-Source Voltage(V) -75 -50 -25 15 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 100 VGS=6V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 5 10 15 20 25 IDR, Reverse Drain Current(A) 30 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 200 R DS(on), Normalized Static DrainSource On-State Resistance ID=28A R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 120 80 40 2.4 VGS=10V, ID=28A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 30.2mΩ 0 0 0 MTE040N20P3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 5/8 Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VG S(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss Coss 1000 Crss ID=250μA 1.2 1 0.8 0.6 0.4 100 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=100V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 1 VDS=10V 0.1 Ta=25°C Pulsed 8 VDS=40V 6 VDS=160V 4 2 ID=28A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 40 60 80 Qg, Total Gate Charge(nC) 100 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 60 RDSON Limited 100 10μs 100μs 10 1ms 1 TC=25°C, Tj=175°C VGS=10V, θ JC=0.5°C/W Single Pulse 10ms DC ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 20 50 40 30 20 10 VGS=10V, RθJC=0.5°C/W 0 0.1 0.1 MTE040N20P3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics (Cont.) Power Derating Curve Typical Transfer Characteristics 350 150 300 PD, Power Dissipation(W) VDS=10V ID, Drain Current(A) 120 90 60 30 250 200 150 100 50 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 25 50 75 100 125 150 175 200 TC, Case Temperature(℃) Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 10 1 0.1 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=0.5°C/W 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 MTE040N20P3 0.0001 0.001 0.01 t1, Square Wave Pulse Duration(s) 0.1 1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE040N20P3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 8/8 TO-247 Dimension Marking: E040N20 Device Name Date Code □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-247 Plastic Package CYStek Package Code: P3 Inches Min. Max. 0.191 0.200 0.087 0.102 0.039 0.055 0.110 0.126 0.071 0.087 0.020 0.028 0.083 0.075 0.608 0.620 0.138 REF DIM A A1 b b1 b2 c c1 D E1 Millimeters Min. Max. 4.850 5.150 2.200 2.600 1.000 1.400 2.800 3.200 1.800 2.200 0.500 0.700 2.100 1.900 15.450 15.750 3.500 REF DIM E2 L L1 L2 Φ e H h Inches Min. Max. 0.142 REF 1.610 1.626 0.976 0.988 0.799 0.811 0.280 0.287 0.215 REF 0.235 REF 0.000 0.012 Millimeters Min. Max. 3.600 REF 40.900 41.300 24.800 25.100 20.300 20.600 7.100 7.300 5.450 REF 5.980 REF 0.000 0.300 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE040N20P3 CYStek Product Specification