CREE C470EZ500-0210-2 Ezbright power chip led rf performance maximum dc forward current - 300 ma Datasheet

Cree® EZ500™ Gen II LED
Data Sheet
CxxxEZ500-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
APPLICATIONS
•
•
EZBright Power Chip LED Rf Performance
General Illumination
–
110 mW min. @ 150 mA – 450 & 460 nm
–
Automobile
–
90 mW min. @ 150 mA - 470 nm
–
Aircraft
–
40 mW min. @ 150 mA - 527 nm
–
Decorative Lighting
–
Task Lighting
–
Outdoor Illumination
•
Lambertian Radiation
•
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
•
White LEDs
•
Low Forward Voltage – 3.4 V Typical at 150 mA
•
Crosswalk Signals
•
Single Wire Bond Structure
•
Television Backlighting
•
Maximum DC Forward Current - 300 mA
●
Dielectric Passivation Across Epi Surface
CxxxEZ500-Sxxx00-2 Chip Diagram
.CPR3EB Rev
Data Sheet:
Top View
Die Cross Section
Bottom View
EZBright LED Chip
480 x 480 μm2
Backside
Metallization
Gold Bond Pad
130 x 130 μm2
Cathode (-)
t = 170 μm
Anode (+);
3 μm AuSn
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ500-Sxxx00-2
DC Forward Current
300 mA
Peak Forward Current
400 mA
LED Junction Temperature
Note 3
145°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +120°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA
Part Number
Forward Voltage (VF, V)
Note 2
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ500-Sxxx00-2
3.1
3.4
4.1
2
19
C460EZ500-Sxxx00-2
3.1
3.4
4.1
2
20
C470EZ500-Sxxx00-2
3.1
3.4
4.1
2
23
C527EZ500-Sxxx00-2
3.1
3.5
4.1
2
35
Mechanical Specifications
Description
CxxxEZ500-Sxxx00-2
Dimension
Tolerance
P-N Junction Area (µm)
450 x 450
±40
Chip Area (µm)
480 x 480
±40
170
±25
130 x 130
±15
Chip Thickness (µm)
Top Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
Back Contact Metal Area (µm)
Back Contact Metal Thickness (µm)
3.0
±1.0
480 x 480
±40
3.0
±1.0
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of
65°C.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
2
CPR3EB Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxEZ500-Sxxx00-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux
C450EZ500-S11000-2
C450EZ500-0213-2
C450EZ500-0214-2
C450EZ500-0215-2
C450EZ500-0216-2
C450EZ500-0209-2
C450EZ500-0210-2
C450EZ500-0211-2
C450EZ500-0212-2
C450EZ500-0205-2
C450EZ500-0206-2
C450EZ500-0207-2
C450EZ500-0208-2
150 mW
130 mW
110 mW
445 nm
447.5 nm
450 nm
452.5 nm
455 nm
Dominant Wavelength
Radiant Flux
C460EZ500-S11000-2
C460EZ500-0213-2
C460EZ500-0214-2
C460EZ500-0215-2
C460EZ500-0216-2
C460EZ500-0209-2
C460EZ500-0210-2
C460EZ500-0211-2
C460EZ500-0212-2
C460EZ500-0205-2
C460EZ500-0206-2
C460EZ500-0207-2
C460EZ500-0208-2
150 mW
130 mW
110 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
Radiant Flux
C470EZ500-S09000-2
C470EZ500-0209-2
C470EZ500-0210-2
C470EZ500-0211-2
C470EZ500-0212-2
C470EZ500-0205-2
C470EZ500-0206-2
C470EZ500-0207-2
C470EZ500-0208-2
C470EZ500-0201-2
C470EZ500-0202-2
C470EZ500-0203-2
C470EZ500-0204-2
130 mW
110 mW
90 mW
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
Radiant Flux
C527EZ500-S3000-2
C527EZ500-0207-2
C527EZ500-0208-2
C527EZ500-0209-2
C527EZ500-0204-2
C527EZ500-0205-2
C527EZ500-0206-2
C527EZ500-0201-2
C527EZ500-0202-2
C527EZ500-0203-2
60 mW
45 mW
30 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
3
CPR3EB Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Dominant Wav
1
0
-1
-2
25
Characteristic Curves
50
75
100
125
150
Junction Temperature (°C)
These are representative measurements for the EZBright500. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Relative Light Intensity vs Junction Temperature
Forward Current vs. Forward Voltage
300
100%
200
If (mA)
95%
Relative Light Intensity
250
150
100
50
90%
85%
80%
75%
70%
0
0
1
2
3
4
65%
5
25
Vf (V)
150
0.000
Mean(Vf Shift)
Voltage Shift (V)
Relative
Intensity
Relative
Intensity
125
Voltage Shift vs Junction Temperature
150%
125%
125%
100%
100%
75%
75%
50%
50%
25%
-0.100
-0.200
-0.300
-0.400
-0.500
25%
0%
0% 0
0
50
50
100
100
150
150
200
200
If (mA)
If (mA)
250
250
300
300
350
-0.600
350
Mean(Vf Shift)
25
12
12
88
44
00
-4
-4
0
0
50
50
100
100
150
150
200
200 250250 300 300 350 350
100
125
150
Dominant Wavelength Shift vs Junction Temperature
Dominant Wavelength Shift (nm)
16
75
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
16
50
EZ400
Wavelength Shift vs. Forward Current
DW Shift
Shift (nm)
DW
(nm)
100
0.100
Relative Intensity vs. Forward Current
175%
150%
-8
-8
75
Junction Temperature (°C)
Relative Intensity vs. Forward Current
175%
50
6
5
4
3
2
1
0
-1
-2
25
If (mA)
If (mA)
50
75
100
125
150
Junction Temperature (°C)
Cree, Inc.
Relative Light Intensity vs Junction Temperature
4600 Silicon Drive
4
CPR3EB Rev. -
sity
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
100%
95%
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ500 are trademarks of Cree, Inc.
5
CPR3EB Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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