ON MMBD2835LT1G Monolithic dual switching diode Datasheet

MMBD2835LT1,
MMBD2836LT1
Monolithic Dual Switching
Diodes
Features
• Pb−Free Packages are Available
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MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
Forward Current
Symbol
Value
Unit
VR
35
75
Vdc
IF
100
mAdc
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
CATHODE
1
ANODE
3
2
CATHODE
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
SOT− 23 (TO −236AB)
CASE 318 −08
STYLE 12
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
MARKING DIAGRAM
xxx M G
G
1
xxx
= Specific Device Code
A3X = MMBD2835LT1
A2X = MMBD2836LT1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMBD2835LT1
MMBD2835LT1G
MMBD2836LT1
MMBD2836LT1G
Package
Shipping †
SOT−23
3000 / Tape & Reel
SOT−23 3000 / Tape & Reel
(Pb−Free)
SOT−23
3000 / Tape & Reel
SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
1
Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1, MMBD2836LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V(BR)
35
75
−
−
Vdc
IR
−
−
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 mAdc)
MMBD2835LT1
MMBD2836LT1
Reverse Voltage Leakage Current (Note 3)
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2835LT1
MMBD2836LT1
nAdc
100
100
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CT
−
4.0
pF
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
VF
−
−
−
1.0
1.0
1.2
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
−
4.0
ns
3. For each individual diode while the second diode is unbiased.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD2835LT1, MMBD2836LT1
CURVES APPLICABLE TO EACH CATHODE
TA = 85°C
I R , REVERSE CURRENT (m A)
10
TA = −40°C
10
TA = 25°C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
0
10
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
C D , DIODE CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
100
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8.0
40
50
MMBD2835LT1, MMBD2836LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
3
1
E HE
2
DIM
A
A1
b
c
D
E
e
L
HE
e
A
b
A1
C
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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MMBD2835LT1/D
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