MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current Symbol Value Unit VR 35 75 Vdc IF 100 mAdc PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C CATHODE 1 ANODE 3 2 CATHODE THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 SOT− 23 (TO −236AB) CASE 318 −08 STYLE 12 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2 MARKING DIAGRAM xxx M G G 1 xxx = Specific Device Code A3X = MMBD2835LT1 A2X = MMBD2836LT1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMBD2835LT1 MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G Package Shipping † SOT−23 3000 / Tape & Reel SOT−23 3000 / Tape & Reel (Pb−Free) SOT−23 3000 / Tape & Reel SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 4 1 Publication Order Number: MMBD2835LT1/D MMBD2835LT1, MMBD2836LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 35 75 − − Vdc IR − − OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) MMBD2835LT1 MMBD2836LT1 Reverse Voltage Leakage Current (Note 3) (VR = 30 Vdc) (VR = 50 Vdc) MMBD2835LT1 MMBD2836LT1 nAdc 100 100 Diode Capacitance (VR = 0 V, f = 1.0 MHz) CT − 4.0 pF Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) VF − − − 1.0 1.0 1.2 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr − 4.0 ns 3. For each individual diode while the second diode is unbiased. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMBD2835LT1, MMBD2836LT1 CURVES APPLICABLE TO EACH CATHODE TA = 85°C I R , REVERSE CURRENT (m A) 10 TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.75 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 1.50 1.25 1.00 0.75 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8.0 40 50 MMBD2835LT1, MMBD2836LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 DIM A A1 b c D E e L HE e A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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