NXP BFQ540 Npn wideband transistor Datasheet

BFQ540
NPN wideband transistor
Rev. 04 — 25 September 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN wideband transistor
BFQ540
FEATURES
DESCRIPTION
• High gain
NPN wideband transistor in a SOT89
plastic package.
• High output voltage
• Low noise
• Gold metallization ensures
excellent reliability
• Low thermal resistance.
APPLICATIONS
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
3
2
1
• VHF, UHF and CATV amplifiers.
Marking code: N4.
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
VCBO
collector-base voltage
open emitter
−
−
20
UNIT
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
VEBO
collector-base voltage
open collector
−
−
2
V
IC
collector current (DC)
−
−
120
mA
W
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
−
1.2
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
insertion power gain
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
13
−
dB
noise figure
IC = 40 mA; VCE = 8 V;
f = 900 MHz; ΓS = Γopt
−
1.9
2.4
dB
s 21
F
2
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 04 - 25 September 2007
2 of 8
NXP Semiconductors
Product specification
NPN wideband transistor
BFQ540
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
120
mA
Ptot
total power dissipation
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
Ts ≤ 60 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MBG241
1.4
Ptot
(W)
1.2
UNIT
95
K/W
Ts ≤ 60 °C; Ptot = 1.2 W
thermal resistance from junction
to soldering point
Rth j-s
VALUE
MBG244
103
handbook, halfpage
IC
(mA)
1.0
0.8
102
0.6
0.4
0.2
0
0
50
100
150
Tj (oC)
200
10
1
10
VCE (V)
102
VCE ≤ 9 V.
Fig.2 Power derating curve.
Fig.3 SOAR.
Rev. 04 - 25 September 2007
3 of 8
NXP Semiconductors
Product specification
NPN wideband transistor
BFQ540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
open emitter; IC = 10 µA; IE = 0
MIN.
TYP.
MAX.
UNIT
20
−
−
V
15
−
−
V
2
−
−
V
V(BR)CBO
collector-base breakdown voltage
V(BR)CES
collector-emitter breakdown voltage RBE = 0; IC = 40 µA
V(BR)EBO
emitter-base breakdown voltage
IE = 100 µA; IC = 0
ICBO
collector-base leakage current
VCB = 8 V; IE = 0
−
−
50
nA
IEBO
emitter-base leakage current
VCB = 1 V; IC = 0
−
−
200
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V;
fm = 1 GHz
−
9
−
GHz
Ce
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz −
2
−
pF
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.9
−
pF
insertion power gain
IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
12
13
−
dB
output voltage
note 1
−
500
−
mV
note 2
−
350
−
mV
s 21
2
Vo
d2
second order intermodulation
distortion
note 3
−
−
−53
dB
F
noise figure
IC = 40 mA; VCE = 8 V;
f = 900 MHz; ΓS = Γopt
−
1.9
2.4
dB
Notes
1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω;
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;
measured at fp + fq − fr = 793.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz;
measured at 2fp − fq = 802 MHz.
3. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;
measured at fp + fq = 810 MHz.
Rev. 04 - 25 September 2007
4 of 8
NXP Semiconductors
Product specification
NPN wideband transistor
BFQ540
MRA688
1.0
handbook, halfpage
MRA689
12
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
VCE = 8V
8
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
1
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
10
IC (mA)
Transition frequency as a function of
collector current; typical values.
MBG243
MBG242
20
20
handbook, halfpage
handbook, halfpage
d2
(dB)
dim
(dB)
30
30
40
40
50
50
60
60
70
70
10
20
30
40
50
10
60
IC (mA)
20
30
40
50
60
IC (mA)
VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz;
Tamb = 25 °C.
VCE = 8 V; Vo = 475 mV; RL = 50 Ω.
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Fig.7
Fig.6
102
Intermodulation distortion as a function of
collector current; typical values.
Rev. 04 - 25 September 2007
Second order intermodulation distortion as
a function of collector current; typical
values.
5 of 8
NXP Semiconductors
Product specification
NPN wideband transistor
BFQ540
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
Rev. 04 - 25 September 2007
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
6 of 8
BFQ540
NXP Semiconductors
NPN wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
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with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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Contact information
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For sales office addresses, send an email to: [email protected]
Rev. 04 - 25 September 2007
7 of 8
BFQ540
NXP Semiconductors
NPN wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFQ540_N_4
20070925
Product data sheet
-
BFQ540_3
Modifications:
•
Fig. 1 and package outline updated
BFQ540_3
(9397 750 07064)
20000523
Product specification
-
BFQ540_2
BFQ540_2
(9397 750 04296)
19980827
Product specification
-
BFQ540_1
BFQ540_1
19950904
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 September 2007
Document identifier: BFQ540_N_4
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