BFQ540 NPN wideband transistor Rev. 04 — 25 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN wideband transistor BFQ540 FEATURES DESCRIPTION • High gain NPN wideband transistor in a SOT89 plastic package. • High output voltage • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base 3 2 1 • VHF, UHF and CATV amplifiers. Marking code: N4. Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. VCBO collector-base voltage open emitter − − 20 UNIT V VCES collector-emitter voltage RBE = 0 − − 15 V VEBO collector-base voltage open collector − − 2 V IC collector current (DC) − − 120 mA W Ptot total power dissipation Ts ≤ 60 °C; note 1 − − 1.2 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 12 13 − dB noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt − 1.9 2.4 dB s 21 F 2 Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 04 - 25 September 2007 2 of 8 NXP Semiconductors Product specification NPN wideband transistor BFQ540 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 120 mA Ptot total power dissipation − 1.2 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Ts ≤ 60 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MBG241 1.4 Ptot (W) 1.2 UNIT 95 K/W Ts ≤ 60 °C; Ptot = 1.2 W thermal resistance from junction to soldering point Rth j-s VALUE MBG244 103 handbook, halfpage IC (mA) 1.0 0.8 102 0.6 0.4 0.2 0 0 50 100 150 Tj (oC) 200 10 1 10 VCE (V) 102 VCE ≤ 9 V. Fig.2 Power derating curve. Fig.3 SOAR. Rev. 04 - 25 September 2007 3 of 8 NXP Semiconductors Product specification NPN wideband transistor BFQ540 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS open emitter; IC = 10 µA; IE = 0 MIN. TYP. MAX. UNIT 20 − − V 15 − − V 2 − − V V(BR)CBO collector-base breakdown voltage V(BR)CES collector-emitter breakdown voltage RBE = 0; IC = 40 µA V(BR)EBO emitter-base breakdown voltage IE = 100 µA; IC = 0 ICBO collector-base leakage current VCB = 8 V; IE = 0 − − 50 nA IEBO emitter-base leakage current VCB = 1 V; IC = 0 − − 200 nA hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; fm = 1 GHz − 9 − GHz Ce emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.9 − pF insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 12 13 − dB output voltage note 1 − 500 − mV note 2 − 350 − mV s 21 2 Vo d2 second order intermodulation distortion note 3 − − −53 dB F noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt − 1.9 2.4 dB Notes 1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz; measured at fp + fq − fr = 793.25 MHz. 2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω; Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz; measured at 2fp − fq = 802 MHz. 3. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 25 September 2007 4 of 8 NXP Semiconductors Product specification NPN wideband transistor BFQ540 MRA688 1.0 handbook, halfpage MRA689 12 handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8V 8 0.6 VCE = 4V 0.4 4 0.2 0 0 4 8 VCB (V) 0 10−1 12 1 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 10 IC (mA) Transition frequency as a function of collector current; typical values. MBG243 MBG242 20 20 handbook, halfpage handbook, halfpage d2 (dB) dim (dB) 30 30 40 40 50 50 60 60 70 70 10 20 30 40 50 10 60 IC (mA) 20 30 40 50 60 IC (mA) VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz; Tamb = 25 °C. VCE = 8 V; Vo = 475 mV; RL = 50 Ω. fp + fq − fr = 793.25 MHz; Tamb = 25 °C. Fig.7 Fig.6 102 Intermodulation distortion as a function of collector current; typical values. Rev. 04 - 25 September 2007 Second order intermodulation distortion as a function of collector current; typical values. 5 of 8 NXP Semiconductors Product specification NPN wideband transistor BFQ540 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC JEITA TO-243 SC-62 Rev. 04 - 25 September 2007 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 6 of 8 BFQ540 NXP Semiconductors NPN wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 25 September 2007 7 of 8 BFQ540 NXP Semiconductors NPN wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFQ540_N_4 20070925 Product data sheet - BFQ540_3 Modifications: • Fig. 1 and package outline updated BFQ540_3 (9397 750 07064) 20000523 Product specification - BFQ540_2 BFQ540_2 (9397 750 04296) 19980827 Product specification - BFQ540_1 BFQ540_1 19950904 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 September 2007 Document identifier: BFQ540_N_4