ON NLAS325US Dual spst analog switch, low voltage, single supply Datasheet

NLAS325
Dual SPST Analog Switch,
Low Voltage, Single Supply
The NLAS325 is a dual SPST (Single Pole, Single Throw) switch,
similar to 1/2 a standard 4066. The device permits the independent
selection of 2 analog/digital signals. Available in the Ultra−Small 8
package.
The use of advanced 0.6 CMOS process, improves the RON
resistance considerably compared to older higher voltage
technologies.
http://onsemi.com
MARKING
DIAGRAM
8
Features
•
•
•
•
•
•
•
•
•
•
•
8
On Resistance is 20 Typical at 5.0 V
Matching is < 1.0 Between Sections
2.0−6.0 V Operating Range
Ultra Low < 5.0 pC Charge Injection
Ultra Low Leakage < 1.0 nA at 5.0 V, 25°C
Wide Bandwidth > 200 MHz, −3.0 dB
2000 V ESD (HBM)
RON Flatness "6.0 at 5.0 V
US8 Package
Independent Enables; One Positive, One Negative
Pb−Free Package is Available
NO1
COM1
IN2
1
8
2
7
3
6
A9 M G
G
1
US8
US SUFFIX
CASE 493
A9
M
G
1
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
PIN ASSIGNMENT
VCC
IN1
1
NO1
2
COM1
3
IN2
4
GND
5
NC2
6
COM2
7
IN1
8
VCC
COM2
FUNCTION TABLE
GND
4
5
NC2
On/Off
Enable Input
Analog
Switch 1
Analog
Switch 2
L
H
Off
On
On
Off
Figure 1. Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
Publication Order Number:
NLAS325/D
NLAS325
MAXIMUM RATINGS
Value
Unit
VCC
Symbol
DC Supply Voltage
Parameter
*0.5 to )7.0
V
VI
DC Input Voltage
*0.5 to )7.0
V
VO
DC Output Voltage
*0.5 to )7.0
V
IIK
DC Input Diode Current
VI < GND
*50
mA
IOK
DC Output Diode Current
VO < GND
*50
mA
IO
DC Output Sink Current
$50
mA
ICC
DC Supply Current per Supply Pin
$100
mA
IGND
DC Ground Current per Ground Pin
$100
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1.0 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature under Bias
)150
°C
JA
Thermal Resistance (Note 1)
250
°C/W
PD
Power Dissipation in Still Air at 85°C
250
mW
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
ESD Withstand Voltage
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
Digital Select Input Voltage
GND
5.5
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
*55
)125
°C
tr, tf
Input Rise or Fall Time, SELECT
0
0
100
20
ns/V
VCC = 3.3 V $ 0.3 V
VCC = 5.0 V $ 0.5 V
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80°C
117.8
TJ = 90°C
1,032,200
TJ = 100°C
80
TJ = 110°C
Time, Years
TJ = 120°C
Time, Hours
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130°C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 2. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2
NLAS325
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
VCC
*555C to 255C
t855C
t1255C
Unit
VIH
Minimum High−Level Input
Voltage, Select Inputs
2.0
2.5
3.0
4.5
5.5
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
V
VIL
Maximum Low−Level Input
Voltage, Select Inputs
2.0
2.5
3.0
4.5
5.5
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
V
IIN
Maximum Input Leakage
Current, Select Inputs
VIN = 5.5 V or GND
0 V to 5.5 V
$0.2
$2.0
$2.0
A
ICC
Maximum Quiescent Supply
Current
Select and VIS = VCC or GND
5.5
4.0
4.0
8.0
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Symbol
Parameter
Condition
VCC
*555C to 255C
t855C
t1255C
Unit
RON
Maximum “ON” Resistance
(Figures 16 − 22)
VIN = VIL or VIH
VIS = GND to VCC
IINI v 10 mA
2.5
3.0
4.5
5.5
85
45
30
25
95
50
35
30
105
55
40
35
RFLAT(ON)
ON Resistance Flatness
(Figures 16 − 22)
VIN = VIL or VIH
IINI v 10 mA
VIS = 1.0 V, 2.0 V, 3.5 V
4.5
4.0
4.0
5.0
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 8)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1.0
10
100
nA
ICOM(ON)
COM ON Leakage Current
(Figure 8)
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with VNC floating or
VNO 1.0 V or 4.5 V with VNO floating
VCOM = 1.0 V or 4.5 V
5.5
1.0
10
100
nA
http://onsemi.com
3
NLAS325
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit
Symbol
Parameter
*555C to 255C
t855C
t1255C
VCC
VIS
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
tON
Turn−On Time
(Figures 11 and 12)
RL = 300 CL = 35 pF
(Figures 4 and 5)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5.0
5.0
2.0
2.0
23
16
11
9.0
35
24
16
14
5.0
5.0
2.0
2.0
38
27
19
17
5.0
5.0
2.0
2.0
41
30
22
20
ns
tOFF
Turn−Off Time
(Figures 11 and 12)
RL = 300 CL = 35 pF
(Figures 4 and 5)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1.0
1.0
1.0
1.0
7.0
5.0
4.0
3.0
12
10
6.0
5.0
1.0
1.0
1.0
1.0
15
13
9.0
8.0
1.0
1.0
1.0
1.0
18
16
12
11
ns
tBBM
Minimum Break−Before−Make
Time
VIS = 3.0 V (Figure 3)
RL = 300 CL = 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1.0
1.0
1.0
1.0
12
11
6.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
ns
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8.0
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
Typical
(V)
25°C
Unit
BW
Maximum On−Channel −3.0 dB
Bandwidth or Minimum Frequency
Response (Figure 10)
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
145
170
175
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
*2.0
*2.0
*2.0
dB
VISO
Off−Channel Isolation (Figure 9)
f = 100 kHz; VIS = 1.0 V RMS
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
*93
*93
*93
dB
Q
Charge Injection Select Input to
Common I/O (Figure 14)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3.0 ns
RIS = 0 , CL = 1000 pF
Q = CL * VOUT
(Figure 7)
3.0
5.5
1.5
3.0
Total Harmonic Distortion THD +
Noise (Figure 13)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF
VIS = 5.0 VPP sine wave
5.5
0.1
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1.0 V RMS
VIN centered between VCC and GND
(Figure 6)
5.5
3.0
*90
*90
THD
VCT
http://onsemi.com
4
pC
%
dB
NLAS325
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
300 tBMM
35 pF
90% of VOH
90%
Output
Switch Select Pin
GND
Figure 3. tBBM (Time Break−Before−Make)
VCC
DUT
VCC
0.1 F
50%
Input
Output
VOUT
Open
50%
0V
300 VOH
90%
35 pF
90%
Output
VOL
Input
tON
tOFF
Figure 4. tON/tOFF
VCC
VCC
50%
Input
DUT
Output
0V
300 VOUT
Open
50%
VOH
35 pF
Output
Input
tOFF
Figure 5. tON/tOFF
http://onsemi.com
5
10%
10%
VOL
tON
NLAS325
50 DUT
Reference
Transmitted
Input
Output
50 Generator
50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
ǒVVOUT
Ǔfor VIN at 100 kHz
IN
VOUT
Ǔ for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log ǒ
VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3.0 dB below VONL
VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
On
VIN
Figure 7. Charge Injection: (Q)
100
LEAKAGE (nA)
10
1
ICOM(ON)
0.1
ICOM(OFF)
0.01
VCC = 5.0 V
INO(OFF)
0.001
−55
−20
25
70
85
TEMPERATURE (°C)
Figure 8. Switch Leakage vs. Temperature
http://onsemi.com
6
125
Off
VOUT
NLAS325
+15
0
1.0
2.0
−20
+10
Bandwidth
(ON−RESPONSE)
+5
3.0
0
PHASE SHIFT
4.0
−40
(dB)
(dB)
Off Isolation
−60
VCC = 5.0 V
TA = 25°C
−80
−100
0.01
0.1
−10
6.0
−15
7.0
−20
8.0
−25
9.0
10.0
0.01
100 200
1
10
FREQUENCY (MHz)
−5
5.0
PHASE (°)
0
VCC = 5.0 V
TA = 25°C
−30
0.1
1
−35
100 300
10
FREQUENCY (MHz)
Figure 9. Off−Channel Isolation
Figure 10. Typical Bandwidth and Phase Shift
30
30
25
25
20
20
TIME (ns)
TIME (ns)
VCC = 4.5 V
15
tON (ns)
10
tOFF (ns)
5
0
2.5
3
3.5
4
4.5
10
tON
5
tOFF
0
−55
5
−40
85
25
125
VCC (VOLTS)
Temperature (°C)
Figure 11. tON and tOFF vs. VCC at 255C
Figure 12. tON and tOFF vs. Temp
1
3.0
VINpp = 3.0 V
VCC = 3.6 V
2.5
2.0
Q (pC)
THD + NOISE (%)
15
0.1
VINpp = 5.0 V
VCC = 5.5 V
VCC = 5 V
1.5
1.0
0.5
VCC = 3 V
0
−0.5
0.01
1
10
0
100
1
2
3
4
FREQUENCY (kHz)
VCOM (V)
Figure 13. Total Harmonic Distortion
Plus Noise vs. Frequency
Figure 14. Charge Injection vs. COM Voltage
http://onsemi.com
7
5
NLAS325
100
100
VCC = 2.0 V
10
80
RON ()
ICC (nA)
1
0.1
0.01
60
VCC = 2.5 V
40
VCC = 3.0 V
0.001
VCC = 3.0 V
VCC = 4.0 V
20
0.0001
VCC = 5.0 V
0.00001
−40
−20
0
20
60
VCC = 5.5 V
80
100
0
0.0
120
3.0
4.0
5.0
VIS (VDC)
Figure 15. ICC vs. Temp, VCC = 3.0 V and 5.0 V
Figure 16. RON vs. VCC, Temp = 255C
90
90
80
80
70
70
60
60
RON ()
100
RON ()
2.0
Temperature (°C)
100
50
40
125°C
30
40
25°C
−55°C
10
85°C
0.5
50
20
−55°C
10
6.0
30
25°C
20
0
0.0
1.0
1.0
1.5
2.0
0
0.0
2.5
85°C
125°C
0.5
1.0
1.5
VIS (VDC)
2.0
2.5
3.0
VIS (VDC)
Figure 17. RON vs Temp, VCC = 2.0 V
Figure 18. RON vs. Temp, VCC = 2.5 V
50
30
45
25
40
20
30
RON ()
RON ()
35
25
20
125°C
10
15
0
0.0
25°C
85°C
10
5
15
5
25°C
85°C
125°C
−55°C
−55°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VIS (VDC)
VIS (VDC)
Figure 20. RON vs. Temp, VCC = 4.5 V
Figure 19. RON vs. Temp, VCC = 3.0 V
http://onsemi.com
8
4.5
NLAS325
25
25
125°C
20
20
RON ()
RON ()
125°C
15
25°C
10
−55°C
85°C
25°C
10
85°C
5
0
0.0
15
−55°C
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
5.0
VIS (VDC)
VIS (VDC)
Figure 21. RON vs. Temp, VCC = 5.0 V
Figure 22. RON vs. Temp, VCC = 5.5 V
ORDERING INFORMATION
Device Nomenclature
Circuit
Indicator
Technology
Device
Function
Package
Suffix
Package Type
Tape and
Reel Size†
NLAS325US
NL
AS
325
US
US8
178 mm (7″)
3000 Unit
NLAS325USG
NL
AS
325
USG
US8
(Pb−Free)
178 mm (7″)
3000 Unit
Device
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
9
NLAS325
PACKAGE DIMENSIONS
US8
US SUFFIX
CASE 493−02
ISSUE B
−X−
A
8
−Y−
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSION OR GATE BURR.
MOLD FLASH. PROTRUSION AND GATE
BURR SHALL NOT EXCEED 0.140 MM
(0.0055”) PER SIDE.
4. DIMENSION “B” DOES NOT INCLUDE
INTER−LEAD FLASH OR PROTRUSION.
INTER−LEAD FLASH AND PROTRUSION
SHALL NOT E3XCEED 0.140 (0.0055”) PER
SIDE.
5. LEAD FINISH IS SOLDER PLATING WITH
THICKNESS OF 0.0076−0.0203 MM.
(300−800 “).
6. ALL TOLERANCE UNLESS OTHERWISE
SPECIFIED ±0.0508 (0.0002 “).
J
DETAIL E
B
L
1
4
R
S
G
P
U
C
−T−
SEATING
PLANE
H
0.10 (0.004) T
K
D
N
0.10 (0.004)
M
T X Y
R 0.10 TYP
V
M
F
DETAIL E
DIM
A
B
C
D
F
G
H
J
K
L
M
N
P
R
S
U
V
MILLIMETERS
MIN
MAX
1.90
2.10
2.20
2.40
0.60
0.90
0.17
0.25
0.20
0.35
0.50 BSC
0.40 REF
0.10
0.18
0.00
0.10
3.00
3.20
0_
6_
5_
10 _
0.23
0.34
0.23
0.33
0.37
0.47
0.60
0.80
0.12 BSC
INCHES
MIN
MAX
0.075
0.083
0.087
0.094
0.024
0.035
0.007
0.010
0.008
0.014
0.020 BSC
0.016 REF
0.004
0.007
0.000
0.004
0.118
0.126
0_
6_
5_
10 _
0.010
0.013
0.009
0.013
0.015
0.019
0.024
0.031
0.005 BSC
SOLDERING FOOTPRINT*
3.8
0.15
0.50
0.0197
1.8
0.07
0.30
0.012
1.0
0.0394
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
10
For additional information, please contact your
local Sales Representative.
NLAS325/D
Similar pages