CPH6444 Ordering number : ENA1243A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6444 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg Unit 60 V ±20 V 4.5 A PW≤10μs, duty cycle≤1% 18 A When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Ratings Conditions min typ V(BR)DSS IDSS ID=1mA, VGS=0V IGSS VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 ⏐yfs⏐ RDS(on)1 VDS=10V, ID=2A 1.8 RDS(on)2 RDS(on)3 Unit max 60 V VDS=60V, VGS=0V 1 μA ±10 μA 2.6 V 60 78 mΩ ID=1A, VGS=4.5V 74 104 mΩ ID=1A, VGS=4V 81 114 mΩ ID=2A, VGS=10V Marking : ZW 3 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22509 MS IM / 61808PE TI IM TC-00001431 No. A1243-1/4 CPH6444 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 505 pF 57 pF Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 37 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.3 ns Rise Time tr See specified Test Circuit. 9.8 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns Fall Time tf See specified Test Circuit. 24 ns Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=4.5A VDS=30V, VGS=10V, ID=4.5A 1.6 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V Package Dimensions 2.1 nC 0.83 1.2 V Switching Time Test Circuit unit : mm (typ) 7018A-003 VDD=30V VIN 0.15 0.6 2.9 5 D PW=10μs D.C.≤1% 0.05 1.6 2.8 ID=2A RL=15Ω VOUT VIN 4 0.2 6 10V 0V G 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 1 CPH6444 P.G 50Ω S SANYO : CPH6 ID -- VDS V 3.5 5.0 1.0 VGS=2.5V 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0 °C 1.5 3.5 25°C 2.0 4.0 °C 2.5 4.5 --25 3.0V Ta= 75 Drain Current, ID -- A 3.0 VDS=10V 5.5 15.0 Drain Current, ID -- A 3.5 ID -- VGS 6.0 4.5 V 10.0V 4.0 V 4 .0V 7.0V 4.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT13789 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT13790 No. A1243-2/4 CPH6444 RDS(on) -- VGS 150 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 ID=1A 140 2A 130 120 110 100 90 80 70 60 50 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S C 5° --2 = Ta °C 75 7 °C 25 5 3 2 A =1 I V, D =2A 5 . =4 , ID V GS 10.0V = V GS =4 V GS 90 80 70 60 50 40 --40 --20 0 20 40 60 80 100 120 140 160 IT13792 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.2 5 7 10 IT13793 0.8 Ciss, Coss, Crss -- pF 2 10 td(on) 7 tr 1.2 IT13794 Ciss 5 tf 1.0 f=1MHz 7 3 5 0.6 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V td(off) 5 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 7 3 2 100 7 Coss 5 Crss 3 2 3 10 2 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 7 0 Drain Current, ID -- A 7 6 5 4 3 3 2 IDP=18A 10 7 5 ID=4.5A 1.0 7 5 3 2 2 1 3 2 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 8 9 10 IT13797 40 50 60 IT13796 PW≤10μs 10 0 1m μs s 10 ms 10 0m s 3 2 0.1 7 5 0 30 ASO 5 8 0 20 Drain-to-Source Voltage, VDS -- V VDS=30V ID=4.5A 9 10 IT13795 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V A =1 , ID .0V 10 7 5 2 1.0 110 100 Ambient Temperature, Ta -- °C 3 7 0.01 Switching Time, SW Time -- ns 16 VDS=10V 5 120 IT13791 ⏐yfs⏐ -- ID 7 130 30 20 --60 40 30 0 140 °C 25° C --25 °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 RDS(on) -- Ta 160 Ta=25°C Ta=7 5 170 DC op era tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT13798 No. A1243-3/4 CPH6444 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13788 Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No. A1243-4/4