LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Surface Mount Package • Device Marking: 4A 1 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device Package Shipping MMVL109T1 SOD–323 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 30 200 Unit Vdc mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 200 mW 1.57 635 -55 to +150 mW/°C °C/W °C RθJA TJ, Tstg *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR — — 0.1 µAdc TCC — 300 — ppm/°C (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f = 1.0 MHz(Note 1) Min Max 5.0 6.5 MMVL109T1–1/2 LESHAN RADIO COMPANY, LTD. MMVL109T1 TYPICAL CHARACTERISTICS 40 1000 36 Q, FIGURE OF MERIT CT , CAPACITANCE – pF 32 28 24 20 16 12 VR = 3 Vdc TA = 25°C 100 f = 1.0 MHz TA = 25°C 8 4 0 1 3 10 30 1000 Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 100 f, FREQUENCY (MHz) 20 10 6.0 VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 –40 10 VR, REVERSE VOLTAGE (VOLTS) 100 60 0.002 0.001 –60 10 100 –20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj [ 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE +100 +125 NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc. MMVL109T1–2/2