Fairchild FDPF5N50 N-channel mosfet 500v, 5a, 1.4î© Datasheet

UniFETTM
FDP5N50 / FDPF5N50
tm
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
Description
• RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDP5N50
FDPF5N50
500
Units
V
±30
V
-Continuous (TC = 25oC)
5
5*
-Continuous (TC = 100oC)
3
3*
- Pulsed
(Note 1)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
5
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
20*
(Note 2)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
A
225
(Note 3)
(TC = 25oC)
PD
TL
20
A
mJ
4.5
V/ns
85
28
W
0.67
0.22
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP5N50
FDPF5N50
RθJC
Symbol
Thermal Resistance, Junction to Case
Parameter
1.4
4.5
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP5N50 / FDPF5N50 Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
December 2007
Device Marking
FDP5N50
Device
FDP5N50
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF5N50
FDPF5N50
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
V
ID = 250μA, Referenced to 25oC
-
0.6
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
μA
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
1.15
1.4
Ω
-
4.3
-
S
-
480
640
pF
-
66
88
pF
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 2.5A
gFS
Forward Transconductance
VDS = 20V, ID = 2.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 5A
VGS = 10V
(Note 4, 5)
-
5
8
pF
-
11
15
nC
-
3
-
nC
-
5
-
nC
-
13
36
ns
-
22
54
ns
-
28
66
ns
-
20
50
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 5A
RG = 25Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
20
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5A
-
-
1.4
V
trr
Reverse Recovery Time
-
300
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 5A
dIF/dt = 100A/μs
-
1.8
-
μC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 18mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP5N50 / FDPF5N50 Rev. A
2
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
20
20
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
10
ID,Drain Current[A]
Figure 2. Transfer Characteristics
1
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250μs Pulse Test
0.1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.04
0.1
1
10
VDS,Drain-Source Voltage[V]
0.1
30
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
70
2.5
VGS = 10V
2.0
VGS = 20V
1.5
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
1.0
0
3
6
ID, Drain Current [A]
9
1
0.4
12
Figure 5. Capacitance Characteristics
1000
1.6
10
VGS, Gate-Source Voltage [V]
Ciss
2. 250μs Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
750
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.0
RDS(ON) [Ω],
Drain-Source On-Resistance
5
6
7
VGS,Gate-Source Voltage[V]
*Note:
1. VGS = 0V
2. f = 1MHz
500
Coss
250
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
FDP5N50 / FDPF5N50 Rev. A
*Note: ID = 5A
0
30
0
3
4
8
Qg, Total Gate Charge [nC]
12
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
1ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
100μs
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
175
30μs
10ms
0.01
-25
25
75
125
o
TJ, Junction Temperature [ C]
10
ID, Drain Current [A]
ID, Drain Current [A]
*Notes:
1. VGS = 10V
2. ID = 2.5A
30
100μs
0.1
1.0
Figure 10. Maximum Safe Operating Area
- FDPF5N50
30μs
1
1.5
-75
Figure 9. Maximum Safe Operating Area
- FDP5N50
10
2.0
0.5
175
30
2.5
2. TJ = 150 C
3. Single Pulse
0.01
800
1
10
100
VDS, Drain-Source Voltage [V]
800
Figure 11. Maximum Drain Current
vs. Case Temperature
6
ID, Drain Current [A]
5
4
3
2
1
0
25
50
75
100
125
o
TC, Case Temperature [ C]
FDP5N50 / FDPF5N50 Rev. A
150
4
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FDP5N50 / FDPF5N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP5N50 / FDPF5N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP5N50
Thermal Response [ZθJC]
3
1
0.5
0.2
PDM
PDM
t1
t1 t2
t2
0.1
0.1
0.05
*Notes:
o
0.02
0.01
1. ZθJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
-4
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
2
10
10
Figure 13. Transient Thermal Response Curve - FDPF5N50
Thermal Response [ZθJC]
10
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
t2
0.02
*Notes:
0.01
o
1. ZθJC(t) = 4.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FDP5N50 / FDPF5N50 Rev. A
-4
10
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
5
2
10
3
10
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FDP5N50 / FDPF5N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5N50 / FDPF5N50 Rev. A
6
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FDP5N50 / FDPF5N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP5N50 / FDPF5N50 Rev. A
7
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP5N50 / FDPF5N50 Rev. A
8
www.fairchildsemi.com
FDP5N50 / FDPF5N50 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP5N50 / FDPF5N50 Rev. A
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I32
FDP5N50 / FDPF5N50 Rev. A
10
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FDP5N50 / FDPF5N50 N-Channel MOSFET
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