Kexin BC808-16 Pnp transistor Datasheet

Transistors
SMD Type
PNP Transistors
BC808
(KC808)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
High current gain.
1
0.55
High collector current.
+0.1
1.3 -0.1
+0.1
2.4 -0.1
Features
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
Low collector-emitter saturation voltage.
+0.05
0.1 -0.01
+0.1
0.97 -0.1
● Complementary NPN type available(BC818)
1.Base
0-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base v oltage
VCBO
-30
V
Collector-emitter v oltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-800
mA
Power dissipation
PD
300
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
+0.1
0.38 -0.1
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditiions
Min
Typ
Max
Unit
Collector-to-baser breakdown voltage
VCBO
IC = -100u A,VBE = 0
-30
V
Collector-to-emitter breakdown voltage
VCEO
IC = -10 mA, IB = 0
-25
V
VEBO
IE = -100u A, IC = 0
-5
V
Emitter-to-base breakdown voltage
Collector cutoff current
ICBO
VCB = -25 V, VBE= 0
-100
nA
Emitter cutoff current
IEBO
VEB = -4 V, IC = 0
-100
nA
DC current gain *
hFE
IC = -100 mA, VCE = -1 V
100
IC = -300 mA, VCE = -1 V
60
630
Collector saturation voltage *
VCE(sat)
IC = -500 mA, IB = -50 mA
-0.7
V
Base emitter on voltage
VBE(on)
VCE=-1V,IC=300mA
-1.2
V
Output Capacitance
Cob
VCB=-10V,f=1MHz
Transition frequency
fT
* Pulsed: PW
350 us,duty cycle
IC = -10 mA, VCE = -5 V, f = 50 MHz
12
100
pF
MHz
2%
Marking
NO.
BC808-16
BC808-25
Marking
5E
5F
hFE
100
250
160
400
BC808-40
5G
250
630
www.kexin.com.cn
1
Transistors
SMD Type
BC808
■ Typical Characterisitics
2
www.kexin.com.cn
(KC808)
Transistors
SMD Type
BC808
(KC808)
■ Typical Characterisitics
www.kexin.com.cn
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Transistors
SMD Type
BC808
■ Typical Characterisitics
4
www.kexin.com.cn
(KC808)
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