AO4610 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical. n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18mΩ (VGS=10V) < 28mΩ (VGS=4.5V) VF<0.5V@1A p-channel -30V -7.1A(VGS = -10V) RDS(ON) < 25mΩ (VGS = -10V) < 40mΩ (VGS = -4.5V) D1 D2 S2/A G2 S1 G1 1 2 3 4 D2/K D2/K D1 D1 8 7 6 5 K A G2 G1 S1 S2 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 8.5 TA=25°C A Current 6.6 TA=70°C ID B Pulsed Drain Current IDM 30 2 TA=25°C PD TA=70°C 1.28 Power Dissipation Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Reverse Voltage Continuous Forward A Current TA=25°C TA=70°C B Pulsed Forward Current TA=25°C TA=70°C Junction and Storage Temperature Range Power Dissipation A Alpha & Omega Semiconductor, Ltd. Symbol VDS ID IDM PD TJ, TSTG Max p-channel -30 ±20 -7.1 -5.6 -30 2 1.28 Units V V A W -55 to 150 °C Maximum Schottky 30 3 Units V 2 20 A 2 1.28 -55 to 150 W °C AO4610 Thermal Characteristics: n-channel, Schottky and p-channel Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C Alpha Omega Semiconductor, Ltd. Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W Schottky Schottky Schottky 47.5 71 32 62.5 110 40 °C/W °C/W °C/W AO4610 N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V Typ 30 25 TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Body-Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current VGS=10V, ID=8.5A TJ=125°C 1.8 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET+Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 100 nA 3 V 15.5 18 22.3 27 23 28 mΩ 1 V 5.5 A 10 23 0.75 mΩ S 1040 pF 180 pF 110 pF 0.7 Ω 19.2 nC 9.36 nC 2.6 nC VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A µA A VGS=4.5V, ID=6.6A VDS=5V, ID=8.5A Units V VDS=24V, VGS=0V VGS(th) IS Max Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.4 ns 17.3 ns 3.3 ns 16.7 6.7 ns nC trr Body-Diode+Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs Qrr Body-Diode+Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 0.007 0.05 Irm Maximum reverse leakage current VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C Junction Capacitance VR=15V 12 37 20 CT V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4610 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 28 Normalized On-Resistance 1.6 26 VGS=4.5V 24 RDS(ON) (mΩ) 2.5 22 20 18 VGS=10V 16 14 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4610 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 Crss 0 0 4 8 12 16 20 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 50 RDS(ON) limited 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 20 0 0.001 0.1 10 30 10 10s 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 30 TJ(Max)=150°C TA=25°C 40 10µs Power (W) 10.0 ID (Amps) 100µs 1ms 0.1 10 100 1000 AO4610 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, ID=-7.1A TJ=125°C VGS=-4.5V, ID=-5.6A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=-5V, ID=-7.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Units V TJ=55°C Static Drain-Source On-Resistance Max -1 VDS=-24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-7.1A VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω µA -5 ±100 nA -2 -2.7 V 20 25 27 33 29 40 A mΩ mΩ 19.6 -0.7 S -1 V -4.2 A 1573 pF 319 pF 211 pF 6.7 Ω 30.9 nC 16.1 nC 8 nC 4.4 nC 9.5 ns 8 ns 44.2 ns 22.2 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-7.1A, dI/dt=100A/µs 25.5 Qrr Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs 14.7 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any agiven a givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thett ≤≤10s 10sthermal thermalresistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 -10V -5V VDS=-5V 25 25 -4V 20 -ID(A) -ID (A) 20 15 -3.5V 10 VGS=-3V 5 10 5 15 0 125°C 25°C 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 17: Transfer Characteristics -VDS (Volts) Fig 16: On-Region Characteristics 40 Normalized On-Resistance 1.6 35 RDS(ON) (mΩ) 2 VGS=-4.5V 30 25 VGS=-10V 20 15 ID=-7.1A 1.4 VGS=-10V 1.2 VGS=-4.5V ID=-5.6A 1 0.8 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 19: On-Resistance vs. Junction Temperature -ID (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 1.0E+00 ID=-7.1A 50 125°C 40 -IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 30 1.0E-02 1.0E-03 1.0E-04 20 25°C 1.0E-05 25°C 1.0E-06 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 21: Body-Diode Characteristics 1.0 AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 2250 10 VDS=-15V ID=-7.1A 1750 Capacitance (pF) -VGS (Volts) 8 2000 6 4 Ciss 1500 1250 1000 750 Coss 500 2 Crss 250 0 0 0 4 8 12 16 20 24 28 32 0 -Qg (nC) Figure 22: Gate-Charge Characteristics 0.1s 20 25 30 TJ(Max)=150°C TA=25°C 30 Power (W) -ID (Amps) 10µs 100µs RDS(ON) limited 1ms 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 15 40 TJ(Max)=150°C, T A=25°C 1.0 10 -VDS (Volts) Figure 23: Capacitance Characteristics 100.0 10.0 5 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000 AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz 125°C Capacitance (pF) IF (Amps) 1 200 0.1 0.01 150 100 50 25°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 0.6 IF=3A Leakage Current (mA) VF (Volts) 5 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000