DTA123JM / DTA123JE / DTA123JUA DTA123JKA / DTA123JSA Transistors Digital transistors (built-in resistors) DTA123JM / DTA123JE / DTA123JUA / DTA123JKA / DTA123JSA !Equivalent circuit !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. OUT R1 IN R2 GND(+) OUT IN GND(+) !Structure PNP digital transistor (Built-in resistor type) !External dimensions (Unit : mm) DTA123JM DTA123JE 1.2 0.8 1.6±0.2 1.0±0.1 0.2 (3) 0.5 0.5 +0.1 0.2−0.05 0.8 (2) 0.4 0.4 1.2 0.32 0.2 0.7±0.1 +0.1 0.2−0.05 0.55±0.1 (1) IN (2) GND (3) OUT ROHM : VMT3 Abbreviated symbol : E32 (3) +0.1 0.3 −0.05 ROHM : EMT3 0~0.1 (1) GND (2) IN (3) OUT 0.1Min. 0.15Max. (2) 0.8±0.1 0.13 0~0.1 0.5 0.22 (1) 1.6±0.2 (1) 0.15±0.05 Abbreviated symbol : E32 DTA123JKA 2.0±0.2 0.8±0.1 0.95 0.95 (2) (2) 0~0.1 Abbreviated symbol : 132 0~0.1 (3) (1) GND (2) IN (3) OUT ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.3Min. 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions 2.8±0.2 2.1±0.1 (1) 1.6+0.2 −0.1 (3) ROHM : UMT3 EIAJ : SC-70 1.1+0.2 −0.1 1.9±0.2 0.7±0.1 0.2 1.25±0.1 (1) 2.9±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.1Min. DTA123JUA (1) GND (2) IN (3) OUT Abbreviated symbol : E32 4±0.2 2±0.2 (15Min.) 5 ROHM : SPT EIAJ : SC-72 3Min. 3±0.2 DTA123JSA 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN 1/3 DTA123JM / DTA123JE / DTA123JUA DTA123JKA / DTA123JSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTA123J Symbol M E ) UA Unit KA SA Supply voltage VCC −50 V Input voltage VIN −12 to +5 V IO −100 IC(Max.) −100 Output current Power dissipation Pd 150 mA 200 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − −0.5 VI(on) −1.1 − − VO(on) − −0.1 −0.3 V II − − −3.6 mA IO(off) − − −0.5 µA GI 80 − − − Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 17 21 26 − fT − 250 − MHz Input voltage Output voltage Input current Output current DC current gain Transition frequency Unit Conditions VCC=−5V, IO=−100µA V VO=−0.3V, IO=−5mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA − − VCE=−10V, IE=5mA, f=100MHz ∗ ∗ Transition frequency of the device !Packaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTA123JM DTA123JE − DTA123JUA − − DTA123JKA − − − DTA123JSA − − − − − 2/3 DTA123JM / DTA123JE / DTA123JUA DTA123JKA / DTA123JSA Transistors !Electrical characteristic curves OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) −20 −10 −5 −2 Ta=−40°C 25°C 100°C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) −1 −2m −1m −500µ Ta=100°C 25°C −40°C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 1k VCC=−5V VO=−5V 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 −500m OUTPUT VOLTAGE : VO(on) (V) −10m −5m VO=−0.3V −50 DC CURRENT GAIN : GI −100 Ta=100°C 25°C −40°C −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0