ESD8472 Ultra-Low Capacitance ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD8472 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • Industry Leading Capacitance Linearity Over Voltage Ultra−Low Capacitance: 0.2 pF Insertion Loss: 0.030 dBm 0201DNS Package: 0.60 mm x 0.30 mm Stand−off Voltage: 5.3 V Low Leakage: < 1 nA Low Dynamic Resistance: < 1 W 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant Typical Applications • • • • RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications USB 2.0, USB 3.0 PIN 1 X3DFN2 CASE 152AF 4M 4 = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† ESD8472MUT5G X3DFN2 (Pb−Free) 10000 / Tape & Reel SZESD8472MUT5G X3DFN2 (Pb−Free) 15000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating IEC 61000−4−2 Level 4 (Contact) (Note 1) IEC 61000−4−2 Level 4 (Air) (Note 1) Maximum Peak Pulse Current IEC 61000−4−5 8/20 ms (Lightning) (Note 2) Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Symbol Value Unit ESD ±20 ±20 kV IPP 3.0 A °PD° RqJA 300 400 mW °C/W TJ, Tstg −55 to +150 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 3. Mounted with recommended minimum pad size, DC board FR−4 © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 9 1 Publication Order Number: ESD8472/D ESD8472 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IPP Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ VRWM VBR IT IT VC VBR VRWM IR Breakdown Voltage @ IT IPP Test Current Bi−Directional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Reverse Working Voltage Breakdown Voltage Symbol Condition Min Typ Max Unit 5.3 V 12 V <1 50 nA VRWM VBR IT = 1 mA (Note 4) 7.0 Reverse Leakage Current IR VRWM = 5.3 V Clamping Voltage VC IPP = 1 A (Note 5) 11 15 V Clamping Voltage VC IPP = 3 A (Note 5) 14 20 V ESD Clamping Voltage VC Per IEC61000−4−2 See Figures 1 and 2 Junction Capacitance CJ VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz 0.20 0.15 Dynamic Resistance RDYN Insertion Loss 0.30 0.30 pF TLP Pulse 1 W f = 1 MHz f = 8.5 GHz 0.050 0.250 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9). Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD8472 Figure 3. IV Characteristics Figure 4. CV Characteristics Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency 20 0 18 −2 16 −4 14 −6 CURRENT (A) CURRENT (A) TYPICAL CHARACTERISTICS 12 10 8 −8 −10 −12 6 −14 4 −16 2 −18 0 0 5 10 15 20 VOLTAGE (V) 25 −20 −30 30 Figure 7. Positive TLP I−V Curve −25 −20 −15 −10 VOLTAGE (V) −5 Figure 8. Negative TLP I−V Curve www.onsemi.com 3 0 ESD8472 % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 9. IEC 61000−4−5 8/20 ms Pulse Waveform www.onsemi.com 4 ESD8472 PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.33 −−− 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 A RECOMMENDED MOUNTING FOOTPRINT* 0.05 C 2X A1 SIDE VIEW C SEATING PLANE 0.74 e 2X 1 1 b 2 2X 2X 0.05 M 2X 0.30 0.05 L2 M 0.31 C A B DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details C A B *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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