NJSEMI BTX18-300 Silicon thyristor Datasheet

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Anode to Cathode - Ratings
Voltage 1)
SILICON THYRISTORS
Ratings
Symbol
BTX18- BTX18- BTX18- BTX18- BTX18100
200
300
400
500
VR
Continuous Reverse Voltage
100
200
300
400
500
V
VRWM
Crest Working Reverse Voltage
100
200
300
400
500
V
120
240
350
500
600
V
120
240
350
500
600
V
VRRM
VRSM
Repetitive Peak Reverse Voltage
(5 = 0.01 ; f=50Hz)
Non-repetitive peak reverse voltage
(t<10ms)
VDWM
Crest Working off-state Voltage
100
200
300
400
500
V
VD
Continuous off-state Voltage
100
200
300
400
500
V
120
240
350
500
600
v2)
120
240
350
500
600
V2)
VDRM
VDSM
Repetitive peak off-state voltage
(8 = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)
Currents
Symbol
Ij(AV)
IT
Ratings
BTX18- BTX18- BTX18- BTX18- BTX18100
200
300
400
500
Average on-state current TCASE=105°C
(averaged over any 20 TAMB=60°C, in
ms period)
free air
On-state Current (D.C.)
TCASE=100°C
IT(RMS)
RMS on-state Current
Max: 1.0
A
Max : 250
mA
Max : 1 .6
A
Max : 1 .6
A
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ITRM
ITSM
Tj
Tsta
BTX18- BTX18- BTX18- BTX18- BTX18100
200
300
400
500
Ratings
Symbol
Max: 10
A
10A
V
Max : 125°C
-55to+125°C
°C
Repetitive Peak on-state Current
Non-repetitive peak on-state current
t=10ms ; Tj=125°C prior to surge
Junction Temperature
Storage Temperature
1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a
resistor R<1 kii is connected between gate and cathode
2) The device is not suitable for operation in the forward breakover mode.
Gate to Cathode - Ratings
With 1£1 resistor between gate and cathode
Symbol
BTX18
-100
Ratings
BTX18
-200
BTX18
-300
BTX18
-400
BTX18
-500
VFGM
Forward Peak Voltage
Max : 10 V
V
VRGM
Reverse Peak Voltage
Max : 5 V
V
IFGM
Forward Peak Current
Max : 0.2
A
PG<AV>
Average Power Dissipation (averaged over
any 20 ms period)
Max : 0.05
W
PGM
Peak Power Dissipation
Max : 0.5
W
Temperatures
Symbol
BTX18
-100
Ratings
BTX18
-200
BTX18
-300
BTX18
-400
BTX18
-500
10
°c/w
From Junction to Ambient
200
°c/w
Transient Thermal Resistance (t=10 ms)
2.5
°c/w
R«i j-c
From Junction to Case
Rth J-a
Zthj-c
Anode to Cathode - Characteristics
Ratings
Symbol
VT
On State Voltage
IT=1 .0 A, Ti=25°C
!
I
BTX18
-100
BTX18
-200
BTX18
-300
1.5
1.5
1.5
BTX18 BTX18
-400
-500
1.5
1.5
v1)
Symbol
IRM
'DM
BTX18 BTX18 BTX18 BTX18 BTX18
-500
-100
-200
-300
-400
Ratings
Peak Reverse Current
<
VRM=VRWmax i Tj=125°C
I
Peak off-state Current
j
VDM=Vowmax i Tj=125°C
I
IL
Latching current, Tj=125°C
IH
Holding Current ; T,=25°C
800
400
275
200
160
HA
800
400
275
200
160
HA
j<
Typ: 10
mA
5.0 2)
mA
Gate to Cathode - Characteristics
Symbol
VGT
VGD
IGT
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200 -300
-400
-500
Ratings
Voltage that will trigger all devices
>
Tj=25°C
Voltage that will not trigger any device <
Ti=125°C
Current that vill trigger all devices
I
Ti=25°C
|
2.0
V
200
mV
5.0
mA
Switching Characteristics
Symbol
BTX18 BTX18 BTX18 BTX18 BTX18
-100
-200
-300
-400
-500
Ratings
I
Turn off time when switched from
IT=300 mA to IR=1 75 mA
I DM
Peak off-state Current
VDM=VDWITOX ; Tj=125°C
i
Tr25 C
i
i™ "'""'""" ' 1 ^
|Ti=125C
|
<
1) V T is measured along the leads at 1 cm from the case
2) Measurer under the following conditiond :
Anode sypply voltage= +6.0V
Initial on-state current after gate triggering= 50mA
The current is reduced until the device turns of.
Type : 20
|1S
Typ : 35
800
400
275
200
160
US
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