LPT3323 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features . High illumination sensitivity . Stable characteristics . Spectrally and mechanically matched with IR emitter 5.0 5.9 7.6 8.6 Description 0.5 TYP The LPT3323 series are silicon nitride passivated NPN planar phototransistors with exceptionally stable characteristics and high illumination sensitivity the cases of LPT3323 are encapsulated in water clear plastic T1 3/4 package individuallt 12.5MIN 1.0MIN 1.EMITTER 2.COLLECTOR 2.3TYP 1 2 Note:1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted 2.Specifications are subject to change without notice •MAXIMUM RATINGS(Ta=25℃) PARAMETER MAXIMUM RATINGS UNIT 100 mw Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation Operating Temperature -50℃ TO +100℃ Storage Temperature -50℃ TO +100℃ 260℃ for 5 seconds Lead Soldering Temperature(1.6mm From Body) •ELECTRICAL CHARACTERISTICS(Ta=25℃) Typ. UNIT TEST CONDITION 30 V Ic=1mA Ee=0mw/c㎡ 5 V IE=100μA Ee=0mw/c㎡ V Ic=0.5mA Ee=20mw/c㎡ PARAMETER SYMBOL Min. Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Collector Breakdown Voltage V(BR)ECO Collector-Emitter Saturation Voltage VCE(sat) Max. 0.4 Rise Time Tr 5 μs Fall Time Tf 5 μs Collector Dark Current On State Collector Current ICEO Ip(on) 100 nA 1 2 mA 2 4 mA 4 8 mA 8 DOC. NO : QW0905-LPT3323 VCE =30V IC=800μA,RL=1K Ω VCE =10V Ee=0mw/c㎡ VCE =5v Ee=1mw/c㎡ λP=940nm mA REV. : C DATE : 18 - Aug - 2005