Rohm BA6506F Two-phase half-wave pre driver fan motor driver Datasheet

Datasheet
DC Brushless Motor Drivers for Cooling Fans
Two-Phase Half-Wave Pre Driver
Fan Motor Driver
BA6506F
●General description
BA6506F is two-phase half-wave fan motor pre-driver.
This driver incorporates lock protection, automatic restart
circuit and Rotation speed pulse signal (FG) output.
●Package
SOP8
W (Typ.) x D (Typ.) x H (Max.)
5.00mm x 6.20mm x 1.71mm
●Features
„ Pre-driver
„ Incorporates lock protection and automatic restart
circuit
„ Rotation speed pulse signal (FG) output
SOP8
●Application
„ For desktop PC, server, general consumer equipment, communication equipment and industrial equipment.
●Absolute maximum ratings
Parameter
Supply voltage
Power dissipation
Operating temperature range
Storage temperature range
Output current
Rotation speed pulse signal (FG) output voltage
Rotation speed pulse signal (FG) output current
Junction temperature
*1
Symbol
Vcc
Pd
Topr
Tstg
Iomax
IFG
VFG
Tjmax
Limit
30
624 *1
–40 to +100
–55 to +125
70
8
30
125
Unit
V
mW
°C
°C
mA
mA
V
°C
Reduce by 6.24mW/°C over Ta=25°C. (On 70.0mm×70.0mm×1.6mm glass epoxy board)
●Recommended operating conditions
Parameter
Operating supply voltage range
Hall input voltage range
○Product structure：Silicon monolithic integrated circuit
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Symbol
Vcc
VH
Limit
4.0 to 28.0
1.0〜Vcc-0.5
Unit
V
V
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18.DEC.2012 Rev.002
BA6506F
●Pin configuration
●Pin description
P/No.
1
2
(TOP VIEW)
VCC
1
8
A2
H+
2
7
A1
FG
3
6
LD
4
5
H-
4
5
GND
6
3
7
8
Fig.1 Pin configuration
T/Name
Function
Vcc
Power terminal
H+
Hall input terminal +
Rotating speed pulse signal output
FG
terminal
HHall input terminal GND GND terminal
Lock detection and automatic
LD
restart capacitor connecting
terminal
A1
Output terminal 1
A2
Output terminal 2
●Block diagram
Vcc
1
A2
8
REG
H+
2
A1
HALL
AMP
+
-
7
LOGIC
FG
3
LD
6
Lock
Detect
Auto
Restart
H4
+
+
GND
5
-
Fig.2 Block diagram
●I/O truth table
H+
H-
A1
A2
FG
H
L
L
H
H (Output Tr ON)
L (Output Tr OFF)
L (Output Tr OFF)
H (Output Tr ON)
H (Output Tr OFF)
L (Output Tr ON)
H; High, L; Low, Hi-Z; High impedance
FG output is open-drain type.
○Product structure：Silicon monolithic integrated circuit
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18.DEC.2012 Rev.002
BA6506F
●Electrical characteristics(Unless otherwise specified Ta=25°C, Vcc=12V)
Icc
Vhys
VFG
IFG
Min.
±3
8.0
Limit
Typ.
3.2
-
Max.
5.0
±15
0.5
-
ILDC
2.0
3.45
ILDD
0.35
rCD
Parameter
Symbol
Circuit current
Hall input hysteresis
FG output L voltage
FG current capacity
Charge current of capacitor for
lock detection
Discharge current of capacitor
for lock detection
Charge-discharge current ratio of
capacitor for lock detection
Clamp voltage of capacitor for
lock detection
Comparison voltage of capacitor
for lock detection
Output H voltage
Unit
Conditions
mA
mV
V
mA
At output OFF
5.25
μA
VLD=1.5V
0.80
1.45
μA
VLD=1.5V
3
4.5
8
-
VLDCL
2.2
2.6
3.0
V
VLDCP
0.4
0.6
0.8
V
VOH
10
10.5
-
V
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
IFG=5mA
VFG=2V
rCD=ILDC/ILDD
Io=10mA
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18.DEC.2012 Rev.002
BA6506F
●Typical performance curves(Reference data)
5
20
Operating range
Hall input hysteresis, Vhys [mV]
-40℃
Circuit current, Icc [mA]
4
25℃
3
100℃
2
1
100℃
25℃
10
-40℃
0
-40℃
25℃
-10
Operating range
100℃
0
-20
0
6
12
18
24
30
0
6
Supply voltage, Vcc [V]
24
30
Fig.4 Hall input hysteresis
5.0
Charge/Discharge current, ILDC/ILDD [uA]
1.0
0.8
AL low voltage, VALL [V]
18
Supply voltage, Vcc [V]
Fig.3 Circuit current
0.6
100℃
0.4
25℃
0.2
12
-40℃
0.0
Operating range
100℃
4.0
25℃
3.0
ILDC
-40℃
2.0
1.0
-40℃
25℃
100℃
0.0
ILDD
-1.0
0
2
4
6
8
10
0
AL current, IAL[mA]
12
18
24
30
Supply voltage, Vcc [V]
Fig.5 AL output L voltage
○Product structure：Silicon monolithic integrated circuit
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TSZ22111・14・001
6
Fig.6 Charge-discharge current of
capacitor for lock detection
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18.DEC.2012 Rev.002
BA6506F
5.0
0.0
Operating range
100℃
4.0
-1.0
-40℃
3.0
25℃
VLDCL
100℃
2.0
-40℃
1.0
25℃
Output voltage, VOH [V]
Clamp/Comparate voltage, VLDCL/VLDCP [V]
●Typical performance curves(Reference data)
25℃
-40℃
-2.0
-3.0
-4.0
VLDCP
100℃
-5.0
0.0
0
6
12
18
24
0
30
Supply voltage, Vcc [V]
40
60
80
Output current, Io [mA]
Fig.8 Output H voltage
Fig.7 Clamp-comparison voltage
of capacitor for lock detection
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
20
○This product is not designed protection against radioactive rays
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TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
BA6506F
●Application circuit example(Constant values are for reference)
Take a measur e against Vcc voltage
rise gener ated by reverse connection
of current and back electrom otive
force.
Vcc
A2
1
8
REG
A1
H+
Set according to t he amplitude
of hall element output and hall
input v oltage range.
HALL
2
HALL
AMP
+
-
7
LOG IC
FG
LD
3
6
Connect a pull-up resis tor
because open collector out put
is set.
Lock
Detec t
Aut o
Restart
H-
Output Tr is equipped externally.
Provide a back electr omotive force
regenerating current route by Z enner
diode for clamping.
Lock detection ON time and lock
detection OFF time can be set.
+
-
4
0.33μF
〜4.7μF
GND
+
5
-
Fig.9 application circuit
Substrate design note
a) IC power, motor outputs, and motor ground lines are made as fat as possible.
b) IC ground (signal ground) line is common with the application ground except motor ground (i.e. hall ground etc.),
and arranged near to (–) land.
c) The bypass capacitor and/or Zenner diode are arrangement near to Vcc terminal.
d) H+ and H– lines are arranged side by side and made from the hall element to IC as shorter as possible,
because it is easy for the noise to influence the hall lines.
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
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○This product is not designed protection against radioactive rays
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BA6506F
●Description of operations
1) Lock protection and automatic restart
○CR timer system
Charging and discharging time at LD terminal depends on the capacitor equipped externally on LD terminal. Charging
and discharging time is determined as follows:
C×(VLDCL-VLDCP)
TON(charging time) =
ILDC
C×(VLDCL-VLDCP)
TOFF(discharging time)=
C
ＶLDCL
ＶLDCP
ＩLDC
ＩLDD
：
：
：
：
：
ILDD
Capacity of capacitor equipped externally on LD terminal
LD terminal clamping voltage
LD terminal comparator voltage
LD terminal charging current
LD terminal discharging current
Timing chart of LD terminal is shown in Fig.10.
H-
A1
TOFF
Output Tr OFF
LD terminal clamping
voltage
LD
TON
ON
LD terminal comparator
voltage
HIGH(open collector)
AL(for BA6406F)
FG(for BA6506F)
Motor Lock
locking detection
Lock
release
Recovers normal
operation
Fig.10 Lock protection (CR timer system) timing chart
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
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TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
BA6506F
●Thermal derating curve
Power dissipation (total loss) indicates the power that can be consumed by IC at Ta = 25ºC (normal temperature). IC is
heated when it consumes power, and the temperature of IC chip becomes higher than ambient temperature. The
temperature that can be accepted by IC chip depends on circuit configuration, manufacturing process, etc, and consumable
power is limited. Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature)
and thermal resistance of package (heat dissipation capability). The maximum junction temperature is in general equal to
the maximum value in the storage temperature range.
Heat generated by consumed power of IC is radiated from the mold resin or lead frame of package. The parameter which
indicates this heat dissipation capability (hardness of heat release) is called heat resistance, represented by the symbol θja
[℃/W]. The temperature of IC inside the package can be estimated by this heat resistance. Fig.11 shows the model of heat
resistance of the package.
Heat resistance θja, ambient temperature Ta, junction temperature Tj, and power consumption P can be calculated by the
equation below:
θja ＝ (Tj−Ta) / P
[℃/W]
Thermal derating curve indicates power that can be consumed by IC with reference to ambient temperature. Power that can
be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal resistance
θja.
Thermal resistance θja depends on chip size, power consumption, package ambient temperature, packaging condition,
wind velocity, etc., even when the same package is used. Thermal derating curve indicates a reference value measured at
a specified condition. Fig.12 shows a thermal derating curve (Value when mounting FR4 glass epoxy board 70 [mm] x 70
[mm] x 1.6 [mm] (copper foil area below 3 [%]))
Pd(mW)
θja
= (Tj-Ta) / P
[℃/W]
800
780
700
624
600
Ambient temperature Ta[℃]
500
400
300
200
Chip surface temperature Tj[℃]
Power
P[W]
BA6506F
consumption
100
Fig.11 Thermal resistance
0
25
50
75 85 95 100
125
150
Ta(℃)
＊ Reduce by 6.24 mW/°C over 25°C.
(70.0mm×70.0mm×1.6mm glass epoxy board)
Fig.12 Thermal derating curve
●Equivalent circuit
1) Hall input terminal
2) Output terminal
3)FG signal output terminal
Vcc
FG
H+
1kΩ
1kΩ
H-
A1,A2
15kΩ
○Product structure：Silicon monolithic integrated circuit
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TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
BA6506F
●Safety measure
1) Reverse connection protection diode
Reverse connection of power results in IC destruction as shown in Fig 13. When reverse connection is possible,
reverse connection protection diode must be added between power supply and Vcc.
Reverse power connection
In normal energization
Vcc
After reverse connection
destruction prevention
Vcc
Vcc
Circuit
block
Circuit
block
Each
pin
GND
Internal circuit impedance high
Æ amperage small
Circuit
block
Each
pin
GND
Large current flows
Æ Thermal destruction
Each
pin
GND
No destruction
Fig.13 Current flow when power is connected reversely
2) About measures of voltage rise by back electromotive force
The voltage of output terminal rises by back electromotive force. The diode D1 of Fig.14 is necessary to divide a power
supply line of motor with small signal line, so that the voltage of the output does not affect a power supply line.
D1
IC
Fig.14 Separation of a power supply line
3) FG output
Vcc
Pull-up
resistor
FG
Protection
resistor R1
Connector
of board
Fig.15 Protection of FG terminal
FG output is an open collector and requires pull-up resistor.
The IC can be protected by adding resistor R1. An excess of absolute maximum rating, when FG output terminal is
directly connected to power supply, could damage the IC.
○Product structure：Silicon monolithic integrated circuit
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○This product is not designed protection against radioactive rays
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TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
BA6506F
4) Problem of GND line PWM switching
Do not perform PWM switching of GND line because GND terminal potential cannot be kept to a minimum.
Vcc
Motor
Driver
GND
Controller
PWM input
Prohibite
Fig.16 GND Line PWM switching prohibited
○Product structure：Silicon monolithic integrated circuit
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BA6506F
●Operational Notes
1) Absolute maximum ratings
An excess in the absolute maximum rations, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
2) Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added
3) Power supply line
Back electromotive force causes regenerated current to power supply line, therefore take a measure such as placing a
capacitor between power supply and GND for routing regenerated current. And fully ensure that the capacitor
characteristics have no problem before determine a capacitor value. (when applying electrolytic capacitors,
capacitance characteristic values are reduced at low temperatures)
4) GND potential
The potential of GND pin must be minimum potential in all operating conditions. Also ensure that all terminals except
GND terminal do not fall below GND voltage including transient characteristics. However, it is possible that the motor
output terminal may deflect below GND because of influence by back electromotive force of motor. Malfunction may
possibly occur depending on use condition, environment, and property of individual motor. Please make fully
confirmation that no problem is found on operation of IC.
5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation(Pd) in actual operating
conditions
6) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together
7) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction
8) ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum rations or ASO
9) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC
10) GND wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either
11) Capacitor between output and GND
When a large capacitor is connected between output and GND, if Vcc is shorted with 0V or GND for some cause, it is
possible that the current charged in the capacitor may flow into the output resulting in destruction. Keep the capacitor
between output and GND below 100uF
12) IC terminal input
When Vcc voltage is not applied to IC, do not apply voltage to each input terminal. When voltage above Vcc or below
GND is applied to the input terminal, parasitic element is actuated due to the structure of IC. Operation of parasitic
element causes mutual interference between circuits, resulting in malfunction as well as destruction in the last. Do not
use in a manner where parasitic element is actuated
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
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18.DEC.2012 Rev.002
BA6506F
●Physical dimension tape and reel information
SOP8
<Tape and Reel information>
6
5
0.3MIN
7
4.4±0.2
6.2±0.3
8
+6°
4° −4°
1 2
3
0.9±0.15
5.0±0.2
(MAX 5.35 include BURR)
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
4
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
1pin
0.42±0.1
(Unit : mm)
Reel
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
●Marking diagram
SOP8
(TOP VIEW)
6 5 0 6
Part Number
LOT Number
1PIN Mark
○Product structure：Silicon monolithic integrated circuit
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Datasheet
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(Note 1)
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intend to use our Products in devices requiring extremely high reliability (such as medical equipment
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De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
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For details, please refer to ROHM Mounting specification
Notice - GE
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Datasheet
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3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BA6506F - Web Page
Buy
Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BA6506F
SOP8
2500
2500
Taping
inquiry
Yes