Chenmko FBM17PT Fast recovery silicon rectifier Datasheet

FBM11PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FBM17PT
FEATURES
*
*
*
*
*
Low leakage current
Ideal for surface mounted applications
Metallurgically bonded construction
Fast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMB
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
(2)
(1)
MECHANICAL DATA
0.190 (4.75)
0.160 (4.06)
Case: JEDEC SMB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Weight: 0.003 ounces, 0.093 gram
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.220 (5.59)
0.205 (5.21)
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SMB
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
FBM11PT FBM12PT FBM13PT FBM14PT FBM15PT FBM16PT FBM17PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Rectified Current TL = 110oC
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Amps
CJ
15
Typical Junction Capacitance (Note 1)
pF
(Note 2)
R
JL
30
o
C/W
(Note 3)
R
JA
75
o
C/W
Maximum Thermal Resistance
Operating and Storage Temperature Range
TJ, TSTG
o
-65 to +150
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage at TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
Maximum Reverse Recovery Time (Note 4)
NOTES : 1.
2.
3.
4.
SYMBOL
FBM11PT FBM12PT FBM13PT FBM14PT FBM15PT FBM16PT FBM17PT
VF
1.3
UNITS
Volts
5.0
uAmps
100
uAmps
IR
trr
Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
Thermal Resistance Junction to terminal 6.0 mm2 copper pads to each terminal
Thermal Resistance Junction to ambient 6.0 mm2 copper pads to each terminal
Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
150
250
500
nSec
2004-10
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
SET TIME BASE FOR
50/100 nS/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1.50
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.25
1.00
.75
.50
.25
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
10
100
10
4.0
TJ =100oC
1.0
.4
.1
.04
TJ =25oC
Pulse Width = 300uS
1% Duty Cycle
1.0
0.1
TJ =25oC
.01
0
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
0
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
35
200
30
JUNCTION CAPACITANCE, ( pF )
PEAK FORWARD SURGE CURRENT, ( A )
AVERAGE FORWARD CURRENT, ( A )
RATING CHARACTERISTIC CURVES ( FBM11PT THRU FBM17PT )
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
20
15
10
5
0
100
60
40
20
10
TJ =25oC
6
4
2
1
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
.1
.2
.4
1.0
2
4
10
REVERSE VOLTAGE, ( V )
20
40
100
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