DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) 24V 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = 25°C 6.5A 5.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Applications • • • • • • • • • • Case: W-DFN5020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.03 grams (approximate) G1 S1 S1 D1 W-DFN5020-6 D2 D1/D2 G2 G1 S1 G2 S2 S2 ESD PROTECTED TO 3kV Top View Bottom View S2 Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number DMG5802LFX-7 Notes: Case W-DFN5020-6 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information ME ME = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMG5802LFX Document number: DS35009 Rev. 4 - 2 2012 Z Mar 3 Apr 4 2013 A May 5 2014 B Jun 6 2015 C Jul 7 1 of 6 www.diodes.com Aug 8 2016 D Sep 9 2017 E Oct O 2018 F Nov N Dec D December 2012 © Diodes Incorporated DMG5802LFX Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 24 ±12 6.5 5.2 ID IDM 5.6 4.5 70 Symbol PD RθJA TJ, TSTG Max 0.98 126.5 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 24 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 0.9 11 12 13 14 17 0.6 1.5 15 17 18 20 0.9 V Static Drain-Source On-Resistance 0.6 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.5A VGS = 4V, ID = 5.6A VGS = 3.1V, ID = 5.6A VGS = 2.5V, ID = 5.6A VDS = 5V, ID = 6.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1066.4 132.0 127.1 1.47 14.5 31.3 2.0 3.1 3.69 13.43 32.18 22.45 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 5.8A nC VGS = 10V, VDS = 15V, ID = 5.8A ns ns ns ns VGS = 10V, VDS = 15V, RL = 2.1Ω, RG = 3Ω 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG5802LFX Document number: DS35009 Rev. 4 - 2 2 of 6 www.diodes.com December 2012 © Diodes Incorporated DMG5802LFX 20 20 VGS = 10V VDS = 5V VGS = 4.5V VGS = 4.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 3.5V VGS = 3.0V 12 VGS = 2.5V VGS = 2.0V 8 VGS = 1.5V 4 12 8 TA = 150°C T A = 125°C T A = 85°C 4 T A = 25°C TA = -55°C 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 0 2.0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 3.0 0.04 VGS = 4.5V 0.03 T A = 150°C 0.02 TA = 125°C TA = 85°C TA = 25°C 0.01 T A = -55°C 0 20 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 VGS = 10V ID = 20A 1.4 VGS = 4.5V ID = 10A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG5802LFX Document number: DS35009 Rev. 4 - 2 RDSON, DRAIN-SOURCE ON-RESISTANCE 1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.03 VGS = 10V ID = 20A 0.02 VGS = 4.5V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com December 2012 © Diodes Incorporated DMG5802LFX 20 1.2 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 12 TA = 25°C 8 4 0.2 0 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 100,000 10,000 1,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 100 10 10,000 T A = 150°C TA = 125°C 1,000 100 TA = 85°C 10 TA = 25°C 1 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 24 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 24 VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 15V ID = 7A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG5802LFX Document number: DS35009 Rev. 4 - 2 40 4 of 6 www.diodes.com December 2012 © Diodes Incorporated DMG5802LFX r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 122°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D e D2 Pin 1 ID E E2 L Z W-DFN5020-6 Dim Min Max Typ A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.15 − − b 0.20 0.30 0.25 D 1.90 2.10 2.00 D2 1.40 1.60 1.50 e 0.50 − − E 4.90 5.10 5.00 E2 2.80 3.00 2.90 L 0.35 0.65 0.50 Z 0.375 − − All Dimensions in mm b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y X C X1 G Y2 Y3 X2 DMG5802LFX Document number: DS35009 Rev. 4 - 2 Dimensions Value (in mm) C 0.50 G 0.35 X 0.35 X1 0.90 X2 1.80 Y 0.70 Y2 1.60 Y3 3.20 5 of 6 www.diodes.com December 2012 © Diodes Incorporated DMG5802LFX IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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