HI-SINCERITY Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 MICROELECTRONICS CORP. H08N02CTS 8-Lead Plastic TSSOP-8 Package Code: TS Dual N-Channel Enhancement-Mode MOSFET (20V, 8A) H08N02CTS Symbol & Pin Assignment 8 Features 7 6 5 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Q2 Q1 • RDS(on)<30mΩ@VGS=2.5V, ID=5.5A • RDS(on)<20mΩ@VGS=4.5V, ID=6.5A 1 2 • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 8 A ID IDM PD Tj, Tstg RθJA Drain Current (Continuous) Drain Current (Pulsed) *1 30 A o 1.5 W o 0.96 W -55 to +150 °C 83 °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) *2 *1: Maximum DC current limited by the package under the ambient condition at room temperature. *2: 1-in2 2oz Cu PCB board H08N02CTS HSMC Product Specification HI-SINCERITY Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 20 - - V VGS=2.5V, ID=5.5A - - 30 VGS=4.5V, ID=6.5A - - 20 0.6 - 1.6 V • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±4.5V, VDS=0V - - ±200 nA gFS Forward Transconductance VDS=10V, ID=6.5A - 30 - S - 9 - - 2.4 - mΩ • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 3.6 - Ciss Input Capacitance - 476 - Coss Output Capacitance - 65.1 - Crss Reverse Transfer Capacitance - 49 - td(on) Turn-on Delay Time - 50 - tr Turn-on Rise Time VDD=10V, ID=1A, VGS=4.5V - 100 - td(off) Turn-off Delay Time RGEN=6Ω - 500 - - 200 - - - 1.7 A - 0.61 1.2 V tf VDS=10V, ID=6A, VGS=4.5V VDS=10V, VGS=0V, f=1MHz nC pF ns Turn-off Fall Time • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.5A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Switching Test Circuit Switching Waveforms ton VDD td(on) tr toff td(off) tf 90% 90% RD VIN D VOUT 10% Output, VOUT 10% Inverted VGEN 90% RG 50% G 50% S Input, VIN H08N02CTS 10% Pulse Width HSMC Product Specification HI-SINCERITY Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 3/4 MICROELECTRONICS CORP. TSSOP-8 Dimension DIM A A1 b C D E E1 e L S H08N02CTS Marking: D 8 7 6 5 E1 Control Code Data Code Pin 1 Index H 0 8N0 2 C Pb Free Mark Pb-Free: " . " (Note) Normal: None E Pin Style: 1.D 2.S1 3.S1 4.G1 5.G2 6.S2 7.S2 8.D Pin1 index Note: Green label is used for pb-free packing 2 3 Detail F A1 *: Typical, Unit: mm 4 R 0.15 Min. Max. 1.20 0.05 0.15 0.19 0.3 0.09 0.20 2.90 3.10 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0o 8o Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 b C A e Seating Plane S L 0.25 Detail F 8-Lead TSSOP-8 Plastic Surface Mounted Package HSMC Package Code: TS Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H08N02CTS HSMC Product Specification HI-SINCERITY Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H08N02CTS o o HSMC Product Specification