Eudyna EGN35A030MK High voltage - high power gan-hemt Datasheet

Eudyna GaN-HEMT 30W
Preliminary
ES/EGN35A030MK
High Voltage - High Power GaN-HEMT
FEATURES
・High Voltage Operation : VDS=50V
・High Power : 46.0dBm (typ.) @ P3dB
・High Efficiency: 55%(typ.) @ P3dB
・Linear Gain : 13.0dB(typ.) @ f=3.5GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt
Tstg
Tch
r
P
Condition
y
r
a
in
Rating
Tc=25oC
m
i
l
e
120
-5
75
-65 to +175
250
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
VDS
IGF
IGR
Tch
Condition
Limit
Unit
RG=15 Ω
RG=15 Ω
50
<TBD
>-2.2
200
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Pinch-Off Voltage
Vp
VDS=50V IDS=11mA
Gate-Drain Breakdown Voltage
VGDO
IGS=- 5.6 mA
3dB Gain Compression Power
P3dB
VDS=50V
Drain Efficiency
ηd
IDS(DC)=200mA
Linear Gain
GL
f=3.5GHz
Thermal Resistance
Edition 1.2
Dec. 2005
Channel to Case
Rth
1
min.
Limit
Typ. Max.
-1.0
-2.0
-3.5
Unit
V
-
-350
-
TBD
46.0
-
dBm
-
55
-
%
13.0
-
TBD
-
2.5
3.0
V
dB
oC/W
ES/EGN35A030MK
High Voltage - High Power GaN-HEMT
50
48
Output Power [dBm]
44
42
40
38
36
34
32
30
3.35
100
48
90
46
80
44
70
42
60
40
50
38
a
in
36
34
3.40
3.45
3.50
3.55
3.60
3.65
m
i
l
e
Frequency [GHz]
Pin=20dBm
Pin=24dBm
Pin=32dBm
Pin=36dBm
r
P
Pin=28dBm
ry
0
18 20 22 24 26 28 30 32 34 36 38
Input Power [dBm]
60
50
40
30
20
10
0
100
150
200
o
Case Temperature [ C]
Edition 1.2
Dec. 2005
2
20
30
70
50
30
10
Power Derating Curve
0
40
32
80
Total Power Dissipasion [W]
Output Power [dBm]
46
50
250
300
Drain Effciency [%]
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=200mA f=3.5GHz
Output Power vs. Frequency
VDS=50V IDS(DC)=200mA
ES/EGN35A030MK
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V, IDS=200mA, f=2 to 5 GHz,
Zl = Zs = 50 ohm
+50j
+100j
10Ω
+25j
25Ω
50Ω
3.5GHz
+10j
0
3.5GHz
-10j
-25j
-100j
-50j
r
P
+90°
m
i
l
e
3.5GHz
±180° 6
Scale for |S21|
Freq
[GHz]
2.0
2.1
2.2
2.3
2.4
+250j
2.5
2.6
2.7
∞
2.8
2.9
3.0
-250j
3.1
3.2
3.3
S11
3.4
S22
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
0°
4.9
5.0
3.5GHz
S12
0.06
Scale for |S 12|
Edition 1.2
Dec. 2005
S21
-90°
3
S11
ANG
MAG
0.912
166.9
0.908
165.8
0.902
164.6
0.899
163.5
0.892
162.1
0.886
160.7
0.877
159.3
0.869
157.5
0.861
155.9
0.847
154.1
0.835
152.2
0.820
150.2
0.797
148.4
0.773
146.8
0.742
145.2
0.708
144.0
0.670
143.7
0.633
144.7
0.609
147.1
0.598
150.3
0.603
153.6
0.630
155.9
0.666
156.6
0.701
156.1
0.731
154.5
0.754
152.5
0.773
150.0
0.786
147.4
0.803
144.7
0.816
142.2
0.822
139.3
S21
MAG
ANG
1.387
-4.8
1.348
-8.3
1.313
-11.5
1.297
-14.9
1.280
-18.4
1.279
-22.1
1.277
-25.8
1.303
-29.6
1.332
-34.1
1.362
-38.8
1.415
-44.3
1.469
-49.8
1.533
-55.8
1.620
-62.5
1.692
-69.9
1.789
-78.7
1.875
-88.6
1.963
-98.7
2.022
-110.4
2.029
-121.9
2.018
-134.2
1.948
-146.4
1.859
-157.9
1.762
-168.6
1.647
-178.3
1.548
172.5
1.455
163.5
1.382
155.3
1.331
146.9
1.281
139.4
1.262
131.3
y
r
a
in
S12
MAG
ANG
0.005
52.2
0.006
56.0
0.006
55.6
0.007
60.4
0.007
60.8
0.009
59.6
0.009
61.8
0.010
60.8
0.011
58.0
0.013
58.2
0.014
52.6
0.015
49.4
0.017
45.5
0.018
41.2
0.019
34.1
0.021
29.3
0.022
20.7
0.023
12.7
0.023
4.0
0.022
-4.2
0.020
-11.0
0.019
-18.7
0.017
-22.3
0.014
-23.1
0.013
-22.1
0.011
-16.1
0.011
-10.1
0.011
1.9
0.013
9.9
0.015
9.3
0.018
12.1
S22
MAG
0.832
0.838
0.841
0.845
0.847
0.851
0.849
0.851
0.852
0.852
0.855
0.853
0.858
0.858
0.864
0.876
0.887
0.899
0.919
0.931
0.948
0.953
0.952
0.952
0.940
0.937
0.915
0.902
0.886
0.866
0.846
ANG
-155.8
-157.4
-158.7
-160.2
-161.6
-162.8
-164.1
-165.2
-166.8
-167.8
-169.4
-170.5
-172.1
-173.8
-175.2
-177.0
-178.7
179.3
176.5
173.5
170.0
165.7
161.8
157.0
152.2
147.6
142.3
137.4
131.0
123.9
115.8
ES/EGN35A030MK
MK Package Outline
Metal-Ceramic Hermetic Package
r
P
m
i
l
e
y
r
a
in
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
Edition 1.2
Dec. 2005
4
Similar pages