Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm (typ.) @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch r P Condition y r a in Rating Tc=25oC m i l e 120 -5 75 -65 to +175 250 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Limit Unit RG=15 Ω RG=15 Ω 50 <TBD >-2.2 200 V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Pinch-Off Voltage Vp VDS=50V IDS=11mA Gate-Drain Breakdown Voltage VGDO IGS=- 5.6 mA 3dB Gain Compression Power P3dB VDS=50V Drain Efficiency ηd IDS(DC)=200mA Linear Gain GL f=3.5GHz Thermal Resistance Edition 1.2 Dec. 2005 Channel to Case Rth 1 min. Limit Typ. Max. -1.0 -2.0 -3.5 Unit V - -350 - TBD 46.0 - dBm - 55 - % 13.0 - TBD - 2.5 3.0 V dB oC/W ES/EGN35A030MK High Voltage - High Power GaN-HEMT 50 48 Output Power [dBm] 44 42 40 38 36 34 32 30 3.35 100 48 90 46 80 44 70 42 60 40 50 38 a in 36 34 3.40 3.45 3.50 3.55 3.60 3.65 m i l e Frequency [GHz] Pin=20dBm Pin=24dBm Pin=32dBm Pin=36dBm r P Pin=28dBm ry 0 18 20 22 24 26 28 30 32 34 36 38 Input Power [dBm] 60 50 40 30 20 10 0 100 150 200 o Case Temperature [ C] Edition 1.2 Dec. 2005 2 20 30 70 50 30 10 Power Derating Curve 0 40 32 80 Total Power Dissipasion [W] Output Power [dBm] 46 50 250 300 Drain Effciency [%] Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=200mA f=3.5GHz Output Power vs. Frequency VDS=50V IDS(DC)=200mA ES/EGN35A030MK High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=200mA, f=2 to 5 GHz, Zl = Zs = 50 ohm +50j +100j 10Ω +25j 25Ω 50Ω 3.5GHz +10j 0 3.5GHz -10j -25j -100j -50j r P +90° m i l e 3.5GHz ±180° 6 Scale for |S21| Freq [GHz] 2.0 2.1 2.2 2.3 2.4 +250j 2.5 2.6 2.7 ∞ 2.8 2.9 3.0 -250j 3.1 3.2 3.3 S11 3.4 S22 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 0° 4.9 5.0 3.5GHz S12 0.06 Scale for |S 12| Edition 1.2 Dec. 2005 S21 -90° 3 S11 ANG MAG 0.912 166.9 0.908 165.8 0.902 164.6 0.899 163.5 0.892 162.1 0.886 160.7 0.877 159.3 0.869 157.5 0.861 155.9 0.847 154.1 0.835 152.2 0.820 150.2 0.797 148.4 0.773 146.8 0.742 145.2 0.708 144.0 0.670 143.7 0.633 144.7 0.609 147.1 0.598 150.3 0.603 153.6 0.630 155.9 0.666 156.6 0.701 156.1 0.731 154.5 0.754 152.5 0.773 150.0 0.786 147.4 0.803 144.7 0.816 142.2 0.822 139.3 S21 MAG ANG 1.387 -4.8 1.348 -8.3 1.313 -11.5 1.297 -14.9 1.280 -18.4 1.279 -22.1 1.277 -25.8 1.303 -29.6 1.332 -34.1 1.362 -38.8 1.415 -44.3 1.469 -49.8 1.533 -55.8 1.620 -62.5 1.692 -69.9 1.789 -78.7 1.875 -88.6 1.963 -98.7 2.022 -110.4 2.029 -121.9 2.018 -134.2 1.948 -146.4 1.859 -157.9 1.762 -168.6 1.647 -178.3 1.548 172.5 1.455 163.5 1.382 155.3 1.331 146.9 1.281 139.4 1.262 131.3 y r a in S12 MAG ANG 0.005 52.2 0.006 56.0 0.006 55.6 0.007 60.4 0.007 60.8 0.009 59.6 0.009 61.8 0.010 60.8 0.011 58.0 0.013 58.2 0.014 52.6 0.015 49.4 0.017 45.5 0.018 41.2 0.019 34.1 0.021 29.3 0.022 20.7 0.023 12.7 0.023 4.0 0.022 -4.2 0.020 -11.0 0.019 -18.7 0.017 -22.3 0.014 -23.1 0.013 -22.1 0.011 -16.1 0.011 -10.1 0.011 1.9 0.013 9.9 0.015 9.3 0.018 12.1 S22 MAG 0.832 0.838 0.841 0.845 0.847 0.851 0.849 0.851 0.852 0.852 0.855 0.853 0.858 0.858 0.864 0.876 0.887 0.899 0.919 0.931 0.948 0.953 0.952 0.952 0.940 0.937 0.915 0.902 0.886 0.866 0.846 ANG -155.8 -157.4 -158.7 -160.2 -161.6 -162.8 -164.1 -165.2 -166.8 -167.8 -169.4 -170.5 -172.1 -173.8 -175.2 -177.0 -178.7 179.3 176.5 173.5 170.0 165.7 161.8 157.0 152.2 147.6 142.3 137.4 131.0 123.9 115.8 ES/EGN35A030MK MK Package Outline Metal-Ceramic Hermetic Package r P m i l e y r a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4