ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for space applications. Noise Figure, NF (dB) 2.5 21 2 18 1.5 15 1 12 0.5 9 NF Associated Gain, GA (dB) • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 6 0 10 1 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA1 P1dB G1dB IDSS PARAMETERS AND CONDITIONS NE24200 00 (CHIP) UNITS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA MIN 10.0 TYP MAX 0.35 0.6 0.7 16.0 11.0 dBm dBm 9.5 11.0 Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA dB dB 11.8 12.8 Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 VP Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 -0.2 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 IGSO Gate to Source Leakage Current at VGS = -3 V µA RTH(CH-C)2 Thermal Resistance (Channel-to-Case) °C/W 60 0.5 10 260 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories NE24200 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VDS Drain to Source Voltage VGSO Gate to Source Voltage Drain Current IDS TYPICAL NOISE PARAMETERS1,2 (TA = 25°C) VDS = 2 V, IDS = 10 mA UNITS RATINGS V 4.0 FREQ. NFOPT GA V -3.0 (GHz) (dB) (dB) MAG ANG Rn/50 mA IDSS 1 0.30 22.0 0.81 10 0.39 0.31 19.0 0.79 17 0.36 ΓOPT IGRF Gate Current µA 200 2 TCH Channel Temperature °C 175 4 0.35 16.0 0.75 31 0.33 TSTG Storage Temperature °C -65 to +175 6 0.38 14.2 0.72 45 0.30 200 8 0.43 12.9 0.70 59 0.27 10 0.50 12.0 0.68 77 0.24 12 0.60 11.0 0.66 92 0.22 14 0.71 10.6 0.64 108 0.19 16 0.85 10.0 0.62 126 0.18 18 1.0 9.5 0.58 140 0.15 20 1.2 9.0 0.55 153 0.13 22 1.5 8.6 0.52 164 0.11 24 1.8 8.3 0.49 175 0.10 26 2.1 7.9 0.48 -176 0.08 28 2.4 7.6 0.46 -168 0.07 30 2.8 7.3 0.46 -160 0.05 PT2 Total Power Dissipation mW Notes: 1. Operation in excess of any one of these conditions may result in permanent damage . 2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm thick). TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Power Dissipation, PT (mW) 250 Notes: 1. Noise Parameters include Bond Wires. Gate: Total 2 wires, 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wires, 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Data at 28 and 30 GHz is extrapolated, not measured. 200 Infinite Heat sink 150 100 50 0 0 25 50 75 100 125 150 175 200 Ambient Temperature, TA (°C) Drain Current, IDS (mA) VGS 0.0 V 40 -0.15 V 30 20 -0.30 V 10 -0.45 V -0.60 V 0 Optimum Noise Figure, NFOPT (dB) 50 1.4 14 1.2 13 12 1 NF 11 0.8 GA 0.6 10 0.4 9 0.2 8 0 0 1 2 3 Drain to Source Voltage, VDS (V) 7 0 5 10 15 20 25 Drain Current, IDS (mA) 30 35 Associated Gain, GA (dB) NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE NE24200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) j50 +120˚ j100 j25 +90˚ 5 +60˚ 4 3 +150˚ j10 S11 30 GHz 10 0 +30˚ 2 25 50 100 S22 .1 GHz 1 S11 .1 GHz .05 +180˚ – S21 .1 GHz S22 30 GHz S12 .1 GHz .15 .20 .25 0˚ S12 S21 30 GHz 30 GHz -j10 -30˚ -150˚ Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -j100 -j25 -60˚ -120˚ -j50 -90˚ NE24200 VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 S12 (GHz) MAG ANG MAG ANG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 .999 .999 .999 .997 .989 .978 .967 .947 .927 .909 .891 .873 .856 .838 .820 .803 .786 .769 .753 .736 .721 .705 .691 .662 .635 .610 .587 .565 -1.3 -2.5 -6.1 -11.9 -23.1 -33.7 -43.7 -53.1 -62.2 -70.8 -79.0 -86.8 -94.3 -101.5 -108.4 -115.0 -121.4 -127.5 -133.5 -139.2 -144.7 -150.1 -155.3 -165.2 -174.6 176.5 168.1 160.0 5.039 5.021 4.966 4.876 4.702 4.535 4.375 4.222 4.075 3.933 3.797 3.666 3.540 3.418 3.301 3.188 3.079 2.973 2.871 2.773 2.677 2.585 2.495 2.324 2.163 2.011 1.867 1.732 179.0 178.0 175.1 170.4 161.2 152.3 143.8 135.6 127.8 120.2 112.8 105.8 98.9 92.3 86.0 79.8 73.8 68.1 62.5 57.1 51.8 46.7 41.7 32.3 23.3 14.8 6.8 -1.00 S22 K MAG ANG MAG ANG .002 .004 .008 .016 .030 .042 .052 .062 .071 .079 .086 .092 .099 .104 .109 .114 .119 .123 .127 .131 .135 .138 .142 .148 .153 .159 .163 .168 89.2 88.6 86.7 83.6 77.3 70.9 64.7 58.8 53.1 47.8 42.9 38.3 34.2 30.4 26.9 23.8 20.9 18.4 16.1 14.0 12.1 10.4 8.9 6.3 4.2 2.4 1.0 0.1 .617 .617 .617 .617 .614 .611 .606 .600 .593 .585 .576 .567 .557 .547 .536 .525 .514 .503 .492 .481 .470 .460 .450 .433 .419 .410 .406 .407 -0.7 -1.4 -4.2 -8.4 -15.4 -22.4 -29.4 -36.0 -41.2 -46.1 -51.0 -55.8 -60.5 -65.1 -69.6 -73.9 -78.2 -82.4 -86.6 -90.6 -94.5 -98.3 -102.0 -109.1 -115.9 122.3 -128.3 -133.9 .05 .03 .01 .01 .04 .07 .09 .12 .16 .20 .23 .26 .29 .32 .35 .37 .40 .43 .45 .48 .51 .54 .57 .64 .71 .76 .85 .92 S21 MAG2 (dB) (dB) 14.0 14.0 13.9 13.8 13.4 13.1 12.8 12.5 12.2 11.9 11.6 11.3 11.0 10.7 10.4 10.1 9.8 9.5 9.2 8.8 8.5 8.2 7.9 7.3 6.7 6.1 5.4 4.8 34.1 31.4 27.7 24.9 22.0 20.4 19.2 18.3 17.6 17.0 16.4 16.0 15.5 15.1 14.8 14.4 14.1 13.8 13.5 13.2 13.0 12.7 12.5 12.0 11.5 11.0 10.6 10.1 Notes: 1. S-Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE24200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) S11 S21 MAG ANG S12 MAG ANG MAG 0.1 .999 -1.4 6.161 178.9 .002 0.2 .999 -2.7 6.156 177.8 .003 0.5 .998 -6.7 6.121 174.5 .006 1.0 .995 -13.2 6.030 169.2 .013 2.0 .982 -25.6 5.811 159.3 .027 3.0 .965 -37.1 5.579 149.9 .039 4.0 .945 -47.9 5.345 141.0 .049 5.0 .923 -58.1 5.120 132.6 .058 6.0 .900 -67.6 4.902 124.6 .066 7.0 .878 -76.5 4.692 117.0 .073 8.0 .856 -84.9 4.493 109.7 .079 9.0 .835 -92.8 4.303 102.8 .085 10.0 .816 -100.2 4.122 96.1 .090 11.0 .797 -107.3 3.951 89.7 .095 12.0 .780 -113.9 3.788 83.6 .099 13.0 .764 -120.3 3.634 77.7 .103 14.0 .749 -126.3 3.488 72.0 .107 15.0 .734 -132.1 3.350 66.5 .111 16.0 .720 -137.7 3.219 61.1 .115 17.0 .706 -143.1 3.095 56.0 .119 18.0 .692 -148.2 2.977 51.0 .123 19.0 .679 -153.3 2.865 46.2 .126 20.0 .665 -158.2 2.759 41.5 .130 22.0 .637 -167.7 2.562 32.5 .138 24.0 .609 -176.9 2.384 23.9 .147 26.0 .583 174.1 2.222 15.7 .157 28.0 .562 165.2 2.076 7.7 .167 30.0 .552 156.4 1.942 0.0 .180 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 S22 ANG MAG 89.3 88.6 86.5 83.2 76.8 70.7 65.0 59.7 54.7 50.0 45.7 41.7 38.0 34.6 31.4 28.6 26.0 23.6 21.5 19.6 17.9 16.4 15.1 12.8 11.1 9.6 8.4 7.1 .554 .553 .550 .545 .535 .525 .516 .507 .498 .489 .481 .473 .465 .457 .450 .443 .436 .429 .423 .417 .411 .405 .399 .389 .380 .370 .362 .354 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = K ANG -0.6 -1.5 -3.7 -7.4 -15.5 -22.9 -30.3 -37.7 -42.2 -47.2 -52.1 -56.8 -61.4 -65.9 -70.3 -74.5 -78.6 -82.7 -86.6 -90.4 -94.1 -97.8 -101.3 -108.1 -114.6 -120.8 -126.7 -132.2 .007 .01 .03 .06 .09 .13 .16 .19 .23 .27 .31 .34 .37 .40 .43 .46 .48 .51 .54 .56 .59 .61 .64 .70 .75 .80 .84 .86 S21 MAG2 (dB) (dB) 15.8 15.8 15.7 15.6 15.3 14.9 14.6 14.2 13.8 13.4 13.0 12.7 12.3 11.9 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 8.2 7.5 6.9 6.3 5.7 35.6 32.8 29.9 26.6 23.4 21.6 20.4 19.5 18.7 18.1 17.6 17.1 16.6 16.2 15.8 15.5 15.1 14.8 14.5 14.2 13.8 13.6 13.3 12.7 12.1 11.5 10.9 10.3 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain OUTLINE DIMENSIONS TYPICAL PERFORMANCE CURVES (TA = 25°C) NE24200 (CHIP) (Units in µm) 400±40 64 56 TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 112 100 D 53 D 350±35 S G G 60 S 150 96 Transconductance, gm (mS) 61 80 60 40 20 41 113 84 0 45 47 40 Chip Thickness: 140 ± 20 µm Note: All dimensions are typical unless otherwise specified. EXCLUSIVE NORTH AMERICAN AGENT FOR 0 5 10 15 20 25 30 35 40 45 50 Drain Current, IDS (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 10/12/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE