CEL NE24200 Ultra low noise pseudomorphic hj fet Datasheet

ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
(SPACE QUALIFIED)
NE24200
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
FEATURES
24
3
• HIGH ASSOCIATED GAIN:
GA = 11.0 dB typical at f = 12 GHz
GA
• LG = 0.25 µm, WG = 200 µm
DESCRIPTION
The NE24200 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and
undoped InGaAs to create a two-dimensional electron gas
layer with very high electron mobility. This device features
mushroom shaped TiAl gates for decreased gate resistance
and improved power handling capabilities. The mushroom
gate results in lower noise figure and high associated gain for
space applications.
Noise Figure, NF (dB)
2.5
21
2
18
1.5
15
1
12
0.5
9
NF
Associated Gain, GA (dB)
• VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
6
0
10
1
20
30
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NFOPT1
GA1
P1dB
G1dB
IDSS
PARAMETERS AND CONDITIONS
NE24200
00 (CHIP)
UNITS
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
MIN
10.0
TYP
MAX
0.35
0.6
0.7
16.0
11.0
dBm
dBm
9.5
11.0
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB
dB
11.8
12.8
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance at VDS = 2 V, IDS = 10 mA
mS
45
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
RTH(CH-C)2
Thermal Resistance (Channel-to-Case)
°C/W
60
0.5
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
NE24200
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
VDS
Drain to Source Voltage
VGSO
Gate to Source Voltage
Drain Current
IDS
TYPICAL NOISE PARAMETERS1,2 (TA = 25°C)
VDS = 2 V, IDS = 10 mA
UNITS
RATINGS
V
4.0
FREQ.
NFOPT
GA
V
-3.0
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
mA
IDSS
1
0.30
22.0
0.81
10
0.39
0.31
19.0
0.79
17
0.36
ΓOPT
IGRF
Gate Current
µA
200
2
TCH
Channel Temperature
°C
175
4
0.35
16.0
0.75
31
0.33
TSTG
Storage Temperature
°C
-65 to +175
6
0.38
14.2
0.72
45
0.30
200
8
0.43
12.9
0.70
59
0.27
10
0.50
12.0
0.68
77
0.24
12
0.60
11.0
0.66
92
0.22
14
0.71
10.6
0.64
108
0.19
16
0.85
10.0
0.62
126
0.18
18
1.0
9.5
0.58
140
0.15
20
1.2
9.0
0.55
153
0.13
22
1.5
8.6
0.52
164
0.11
24
1.8
8.3
0.49
175
0.10
26
2.1
7.9
0.48
-176
0.08
28
2.4
7.6
0.46
-168
0.07
30
2.8
7.3
0.46
-160
0.05
PT2
Total Power Dissipation
mW
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage .
2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm
thick).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Power Dissipation, PT (mW)
250
Notes:
1. Noise Parameters include Bond Wires.
Gate:
Total 2 wires, 1 per bond pad 0.0132" (335 µm) long
each wire.
Drain: Total 2 wires, 1 per bond pad 0.0094" (240 µm)
long each wire.
Source: Total 4 wires, 2 per side, 0.0070" (178 µm) long
each wire.
Wire:
0.0007" (17.8 µm) dia. gold.
2. Data at 28 and 30 GHz is extrapolated, not measured.
200
Infinite
Heat sink
150
100
50
0
0
25
50
75
100
125
150
175
200
Ambient Temperature, TA (°C)
Drain Current, IDS (mA)
VGS
0.0 V
40
-0.15 V
30
20
-0.30 V
10
-0.45 V
-0.60 V
0
Optimum Noise Figure, NFOPT (dB)
50
1.4
14
1.2
13
12
1
NF
11
0.8
GA
0.6
10
0.4
9
0.2
8
0
0
1
2
3
Drain to Source Voltage, VDS (V)
7
0
5
10
15
20
25
Drain Current, IDS (mA)
30
35
Associated Gain, GA (dB)
NOISE FIGURE & ASSOCIATED
GAIN vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
NE24200
TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C)
j50
+120˚
j100
j25
+90˚
5
+60˚
4
3
+150˚
j10
S11
30 GHz
10
0
+30˚
2
25
50
100
S22
.1 GHz
1
S11
.1 GHz
.05
+180˚
–
S21
.1 GHz
S22
30 GHz
S12
.1 GHz
.15 .20 .25 0˚
S12
S21
30 GHz 30 GHz
-j10
-30˚
-150˚
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, IDS = 10 mA)
-j100
-j25
-60˚
-120˚
-j50
-90˚
NE24200
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
S12
(GHz)
MAG
ANG
MAG
ANG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
26.0
28.0
30.0
.999
.999
.999
.997
.989
.978
.967
.947
.927
.909
.891
.873
.856
.838
.820
.803
.786
.769
.753
.736
.721
.705
.691
.662
.635
.610
.587
.565
-1.3
-2.5
-6.1
-11.9
-23.1
-33.7
-43.7
-53.1
-62.2
-70.8
-79.0
-86.8
-94.3
-101.5
-108.4
-115.0
-121.4
-127.5
-133.5
-139.2
-144.7
-150.1
-155.3
-165.2
-174.6
176.5
168.1
160.0
5.039
5.021
4.966
4.876
4.702
4.535
4.375
4.222
4.075
3.933
3.797
3.666
3.540
3.418
3.301
3.188
3.079
2.973
2.871
2.773
2.677
2.585
2.495
2.324
2.163
2.011
1.867
1.732
179.0
178.0
175.1
170.4
161.2
152.3
143.8
135.6
127.8
120.2
112.8
105.8
98.9
92.3
86.0
79.8
73.8
68.1
62.5
57.1
51.8
46.7
41.7
32.3
23.3
14.8
6.8
-1.00
S22
K
MAG
ANG
MAG
ANG
.002
.004
.008
.016
.030
.042
.052
.062
.071
.079
.086
.092
.099
.104
.109
.114
.119
.123
.127
.131
.135
.138
.142
.148
.153
.159
.163
.168
89.2
88.6
86.7
83.6
77.3
70.9
64.7
58.8
53.1
47.8
42.9
38.3
34.2
30.4
26.9
23.8
20.9
18.4
16.1
14.0
12.1
10.4
8.9
6.3
4.2
2.4
1.0
0.1
.617
.617
.617
.617
.614
.611
.606
.600
.593
.585
.576
.567
.557
.547
.536
.525
.514
.503
.492
.481
.470
.460
.450
.433
.419
.410
.406
.407
-0.7
-1.4
-4.2
-8.4
-15.4
-22.4
-29.4
-36.0
-41.2
-46.1
-51.0
-55.8
-60.5
-65.1
-69.6
-73.9
-78.2
-82.4
-86.6
-90.6
-94.5
-98.3
-102.0
-109.1
-115.9
122.3
-128.3
-133.9
.05
.03
.01
.01
.04
.07
.09
.12
.16
.20
.23
.26
.29
.32
.35
.37
.40
.43
.45
.48
.51
.54
.57
.64
.71
.76
.85
.92
S21
MAG2
(dB)
(dB)
14.0
14.0
13.9
13.8
13.4
13.1
12.8
12.5
12.2
11.9
11.6
11.3
11.0
10.7
10.4
10.1
9.8
9.5
9.2
8.8
8.5
8.2
7.9
7.3
6.7
6.1
5.4
4.8
34.1
31.4
27.7
24.9
22.0
20.4
19.2
18.3
17.6
17.0
16.4
16.0
15.5
15.1
14.8
14.4
14.1
13.8
13.5
13.2
13.0
12.7
12.5
12.0
11.5
11.0
10.6
10.1
Notes:
1. S-Parameters include Bond Wires.
Gate:
Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each
wire.
Drain:
Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each
wire.
Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire.
Wire:
0.0007" (17.8 µm) dia. gold.
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE24200
TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C)
VDS = 2 V, IDS = 20 mA
FREQUENCY
(GHz)
S11
S21
MAG
ANG
S12
MAG
ANG
MAG
0.1
.999
-1.4
6.161
178.9
.002
0.2
.999
-2.7
6.156
177.8
.003
0.5
.998
-6.7
6.121
174.5
.006
1.0
.995
-13.2
6.030
169.2
.013
2.0
.982
-25.6
5.811
159.3
.027
3.0
.965
-37.1
5.579
149.9
.039
4.0
.945
-47.9
5.345
141.0
.049
5.0
.923
-58.1
5.120
132.6
.058
6.0
.900
-67.6
4.902
124.6
.066
7.0
.878
-76.5
4.692
117.0
.073
8.0
.856
-84.9
4.493
109.7
.079
9.0
.835
-92.8
4.303
102.8
.085
10.0
.816
-100.2
4.122
96.1
.090
11.0
.797
-107.3
3.951
89.7
.095
12.0
.780
-113.9
3.788
83.6
.099
13.0
.764
-120.3
3.634
77.7
.103
14.0
.749
-126.3
3.488
72.0
.107
15.0
.734
-132.1
3.350
66.5
.111
16.0
.720
-137.7
3.219
61.1
.115
17.0
.706
-143.1
3.095
56.0
.119
18.0
.692
-148.2
2.977
51.0
.123
19.0
.679
-153.3
2.865
46.2
.126
20.0
.665
-158.2
2.759
41.5
.130
22.0
.637
-167.7
2.562
32.5
.138
24.0
.609
-176.9
2.384
23.9
.147
26.0
.583
174.1
2.222
15.7
.157
28.0
.562
165.2
2.076
7.7
.167
30.0
.552
156.4
1.942
0.0
.180
Notes:
1. S Parameters include Bond Wires.
Gate:
Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire.
Drain:
Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire.
Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire.
Wire:
0.0007" (17.8 µm) dia. gold.
2. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
S22
ANG
MAG
89.3
88.6
86.5
83.2
76.8
70.7
65.0
59.7
54.7
50.0
45.7
41.7
38.0
34.6
31.4
28.6
26.0
23.6
21.5
19.6
17.9
16.4
15.1
12.8
11.1
9.6
8.4
7.1
.554
.553
.550
.545
.535
.525
.516
.507
.498
.489
.481
.473
.465
.457
.450
.443
.436
.429
.423
.417
.411
.405
.399
.389
.380
.370
.362
.354
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
K
ANG
-0.6
-1.5
-3.7
-7.4
-15.5
-22.9
-30.3
-37.7
-42.2
-47.2
-52.1
-56.8
-61.4
-65.9
-70.3
-74.5
-78.6
-82.7
-86.6
-90.4
-94.1
-97.8
-101.3
-108.1
-114.6
-120.8
-126.7
-132.2
.007
.01
.03
.06
.09
.13
.16
.19
.23
.27
.31
.34
.37
.40
.43
.46
.48
.51
.54
.56
.59
.61
.64
.70
.75
.80
.84
.86
S21
MAG2
(dB)
(dB)
15.8
15.8
15.7
15.6
15.3
14.9
14.6
14.2
13.8
13.4
13.0
12.7
12.3
11.9
11.6
11.2
10.8
10.5
10.1
9.8
9.5
9.1
8.8
8.2
7.5
6.9
6.3
5.7
35.6
32.8
29.9
26.6
23.4
21.6
20.4
19.5
18.7
18.1
17.6
17.1
16.6
16.2
15.8
15.5
15.1
14.8
14.5
14.2
13.8
13.6
13.3
12.7
12.1
11.5
10.9
10.3
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
OUTLINE DIMENSIONS
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE24200 (CHIP)
(Units in µm)
400±40
64
56
TRANSCONDUCTANCE vs.
DRAIN CURRENT
VDS = 2.0 V
112
100
D
53
D
350±35
S
G
G
60
S
150
96
Transconductance, gm (mS)
61
80
60
40
20
41
113
84
0
45
47
40
Chip Thickness: 140 ± 20 µm
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
0
5
10
15
20
25
30
35
40
45
50
Drain Current, IDS (mA)
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
10/12/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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