ON BZX84C43ET3 Zener voltage regulator Datasheet

BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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Specification Features
•
•
•
•
•
•
•
3
Cathode
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 s)
Pb−Free Package is Available
1
Anode
3
SOT−23
CASE 318
STYLE 8
1
2
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
260°C for 10 Seconds
xxxM
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx = Specific Device Code
M = Date Code
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL ≤ 25°C
Ppk
225
Watts
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
RJA
225
1.8
mW
mW/°C
556
°C/W
ORDERING INFORMATION
Device
Package
Shipping†
BZX84CxxxET1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
BZX84CxxxET1G
BZX84CxxxET3
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−65 to
+150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ
C
I
VZ VR
V
IR VF
IZT
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking
Min
Nom
Max
ZZT1
()
@ IZT1
=
5 mA
BZX84C3V3ET1
BA4
3.1
3.3
3.5
BZX84C4V7ET1
BA9
4.4
4.7
5
BZX84C5V1ET1
BB1
4.8
5.1
BZX84C5V6ET1
BB2
5.2
BZX84C6V2ET1, G*
BB3
5.8
BZX84C6V8ET1
BB4
BZX84C7V5ET1
BB5
BZX84C10ET1
BB8
BZX84C12ET1
BZX84C15ET1
VZ2 (V)
@ IZT2 = 1 mA
(Note 4)
Min
Max
ZZT2
()
@ IZT2
=
1 mA
95
2.3
2.9
80
3.7
4.7
5.4
60
4.2
5.6
6
40
6.2
6.6
10
6.4
6.8
7.2
7
7.5
7.9
9.4
10
BC1
11.4
BC3
14.3
BZX84C16ET1
BC4
BZX84C18ET1
BC5
BZX84C24ET1
BC8
Device
Max
Reverse
Leakage
Current
VZ
C (pF)
(mV/k)
@
@ IZT1=5 mA
VR = 0
f=
Min Max 1 MHz
Min
Max
ZZT3
()
@
IZT3=
20 mA
600
3.6
4.2
40
5
1
−3.5
0
450
500
4.5
5.4
15
3
2
−3.5
0.2
260
5.3
480
5
5.9
15
2
2
−2.7
1.2
225
4.8
6
400
5.2
6.3
10
1
2
−2.0
2.5
200
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
15
15.8
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
VZ1 Below
@ IZT1 = 2 mA
Device
Marking
Min
Nom
Max
BZX84C27ET1
BC9
25.1
27
28.9
BZX84C43ET1
BK6
40
43
46
Device
VZ3 (V)
@ IZT3=20 mA
(Note 4)
ZZT1
Below
@ IZT1
=
2 mA
VZ2 Below
@ IZT2 =
0.1 mA
Min
Max
ZZT2
Below
@ IZT4
=
0.5 mA
80
25
28.9
150
39.7
46
VZ3 Below
@ IZT3 = 10 m
A
Min
Max
ZZT3
Below
@ IZT3
=
10 mA
300
25.2
29.3
375
40.1
46.5
* The “G” suffix indicates Pb−Free package available.
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
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2
V
IR
@ R
A
(V)
Max
Reverse
Leakage
Current
VZ
(mV/k) Below
@ IZT1 = 2
mA
V
IR
@ R
A
(V)
Min
Max
C (pF)
@ VR
=0
f=
1 MHz
45
0.05
18.9
21.4
25.3
70
80
0.05
30.1
37.6
46.6
40
BZX84C2V4ET1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
TYPICAL TC VALUES
VZ @ IZT
10
2
1
0
−1
−2
−3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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3
1.1
1.2
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
1000
0 V BIAS
I R , LEAKAGE CURRENT (µA)
TA = 25°C
C, CAPACITANCE (pF)
1 V BIAS
100
BIAS AT
50% OF VZ NOM
1
10
1
+150°C
0.1
0.01
10
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
0.001
+ 25°C
0.0001
−55°C
0.00001
0
10
Figure 5. Typical Capacitance
100
I Z, ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
10
1
0.1
0.01
12
10
TA = 25°C
10
100
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 s
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
80
70
60
HALF VALUE IRSM/2 @ 20 s
50
40
30
tP
20
10
0
0
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
80
Figure 6. Typical Leakage Current
100
0.01
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
20
40
60
t, TIME (s)
Figure 9. 8 × 20 s Pulse Waveform
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4
80
90
BZX84C2V4ET1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
BZX84C2V4ET1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BZX84C2V4ET1/D
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