HUR1520, HUR1530, HUR1540 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 400 HUR1520 HUR1530 HUR1540 Symbol VRRM V 200 300 400 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=135oC; rectangular, d=0.5 35 15 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 140 A 0.8 mJ 0.3 A EAS IAR o TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight P1 typical o C 95 W 0.4...0.6 Nm 2 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR1520, HUR1530, HUR1540 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.21 1.68 V RthJC RthCH 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC trr VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 30 o IRM 1.6 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 2.7 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR1520, HUR1530, HUR1540 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 40 500 A nC Qr TVJ = 150°C TVJ = 100°C 20 IRM V 1 10 IF = 7.5A 5 0 100 2 VF Fig. 1 Forward current IF versus VF 80 trr IF = 15A tfr VFR 10 IF = 15A 1.0 600 A/us 800 1000 -diF/dt TVJ = 100°C 12 IF = 30A 60 400 Fig. 3 Peak reverse current IRM versus -diF/dt VFR Kf 200 V VR = 150V 70 0 14 TVJ = 100°C ns 1.2 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 0.85 us ı 0.80 tfr 0.75 IF = 7.5A IRM 50 8 0.70 40 6 0.65 Qr 0.8 0.6 IF = 15A 100 0 IF = 30A 15 IF = 7.5A IF = 15A 200 0 VR = 150V IF = 30A 300 TVJ = 25°C 10 TVJ = 100°C A VR = 150V 400 30 IF 20 TVJ = 100°C 0 40 80 120 °C 160 30 0 TVJ 200 400 600 800 1000 A/us 4 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.60 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC 0.1 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.005 0.0003 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com