Sirectifier HUR1520 Ultra fast recovery epitaxial diode Datasheet

HUR1520, HUR1530, HUR1540
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
200
300
400
HUR1520
HUR1530
HUR1540
Symbol
VRRM
V
200
300
400
Test Conditions
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
IFRMS
IFAVM
TC=135oC; rectangular, d=0.5
35
15
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
140
A
0.8
mJ
0.3
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
P1
typical
o
C
95
W
0.4...0.6
Nm
2
g
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR1520, HUR1530, HUR1540
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
100
0.5
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
1.21
1.68
V
RthJC
RthCH
0.5
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
trr
VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
K/W
30
o
IRM
1.6
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ns
2.7
ADVANTAGES
A
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR1520, HUR1530, HUR1540
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
40
500
A
nC
Qr
TVJ = 150°C
TVJ = 100°C
20
IRM
V
1
10
IF = 7.5A
5
0
100
2
VF
Fig. 1 Forward current IF versus VF
80
trr
IF = 15A
tfr
VFR
10
IF = 15A
1.0
600 A/us
800 1000
-diF/dt
TVJ = 100°C
12
IF = 30A
60
400
Fig. 3 Peak reverse current IRM
versus -diF/dt
VFR
Kf
200
V
VR = 150V
70
0
14
TVJ = 100°C
ns
1.2
0
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
0.85
us
ı
0.80
tfr
0.75
IF = 7.5A
IRM
50
8
0.70
40
6
0.65
Qr
0.8
0.6
IF = 15A
100
0
IF = 30A
15
IF = 7.5A
IF = 15A
200
0
VR = 150V
IF = 30A
300
TVJ = 25°C
10
TVJ = 100°C
A
VR = 150V
400
30
IF
20
TVJ = 100°C
0
40
80
120 °C 160
30
0
TVJ
200
400
600
800 1000
A/us
4
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
10
0.60
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
ZthJC
0.1
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.005
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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