AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Product Features Product Description • 3.3 – 3.8 GHz • +39.4 dBm P1dB • 11.5 dB Gain • 2.0% EVM @ 30 dBm Pout Functional Diagram The AP562 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 11.5 dB gain, while being able to achieve high performance for 3.3–3.8 GHz WiMAX applications with up to 39.4 dBm of compressed 1dB power. • +12 V Supply Voltage The AP562 uses a high reliability +12V InGaP/GaAs HBT process technology. The device incorporates proprietary • Lead-free/green/RoHS-compliant bias circuitry to compensate for variations in linearity and 5x6 mm power DFN package current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP562 to operate directly off a commonly used +12V Applications supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is • WiMAX CPE/BTS surface mountable to allow for low manufacturing costs to the end user. The AP562 is targeted for use in a balanced or single ended configuration for WiMAX applications where high linearity and high power is required. Specifications Parameter Function RFIN RFOUT IREF VBIAS NC Pin No. 4,5,6 9,10,11 14 1 2,3,7,8,12,13 Typical Performance Units Min Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return Loss Error Vector Magnitude Operating Current, Icc RF Switching Speed Collector Efficiency Output P1dB Quiescent Current, Icq Vpd(4) Vcc GHz GHz dBm dB dB dB % mA ns % dBm mA V V Typ 3.3 Max 3.8 3.5 +30 11.5 15 6.7 1.9 685 50 11.7 39.4 400 +5 +12 Parameter Units Test Frequency Channel Power Power Gain Input Return Loss Output Return Loss Error Vector Magnitude Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd Vcc GHz dBm dB dB dB % mA % dBm mA V V Typical 3.4 +30 11.5 11 5.6 2.2 720 11.1 39.5 3.5 +30 11.5 15 6.7 1.9 685 11.7 39.4 400 +5 +12 3.6 +30 11.3 15 5.9 1.7 670 12.2 38.7 Notes: 1. Test conditions unless otherwise noted: T = 25ºC, Vpd = +5V, Vcc = +12, Icq = 400mA at Pout = +30 dBm and f = 3.5 GHz. 2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%. 3. Switching speed: 50% TTL to 100/0% RF. 4. Vpd used for device power down. (low=RF off) 5. Capable of handling 10:1 VSWR @ 12 VDC, WiMax signal, PoutAVG = 30dBm. Absolute Maximum Rating Parameter Rating Pin max (CW into 50Ω load) Storage Temperature Max Junction Temperature, TJ,max Thermal Resistance, ΘJC +33 dBm -55 to +125 ºC 158 ºC 8.4 °C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AP562-F AP562-PCB3500 WiMAX 12V 8W HBT Amplifier 3.4-3.6 GHz Fully Assembled Evaluation Board Standard T/R size = 500 pieces on a 7” reel. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 1 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Baseplate Configuration Vcc Vpd GND Application Circuit PC Board Layout Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050” Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended. Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP562 in a laboratory environment. The sequencing is not required in the final system application. Bias. Vcc Vpd Voltage (V) +12 +5 Turn-on Sequence: 1. 2. 3. 4. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +12V. Turn on power supply Vpd = +5V. Turn on RF power. Turn-off Sequence: 1. 2. 3. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vcc = +12V. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 2 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Typical Device Data S-Parameters (VCC= +12 V, ICC = 400 mA, 25 °C, unmatched 50 ohm system) S(1,1) AP562 0.8 1.0 S(2,2) Max AP562 Swp6GHz 0 0. 4 30 2. 2. 0 6 0. 0.8 Swp Max 6GHz 6 0. 40 S22 1.0 S11 Gain / Maximum Stable Gain 0. 4 0 3. 0 3. 0 4. 4. 0 5.0 5.0 0.2 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 10 0.4 10.0 0 Gain (dB) 20 0 -10.0 -5. 0 -4 .0 -0.8 Swp Min 0.05GHz -1.0 -0 .6 - -1.0 -0.8 Swp Min 0.05GHz 0 2. .4 -0 0 2. .4 -0 .6 Frequency (GHz) .0 6 -3 4 -3 .0 -0 2 -4 .0 -20 0 2 -0. 0 DB(|S(2,1)|) AP562 -5. DB(GMax()) AP562 -10.0 2 -0. -10 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line. S-Parameters (VCC = +12 V, ICQ = 400 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -0.79 -0.40 -0.31 -0.29 -0.29 -0.34 -0.36 -0.37 -0.35 -0.47 -0.50 -0.60 -0.69 -0.82 -0.94 -1.16 -1.51 -2.02 -2.49 -2.56 -2.06 -1.43 -1.01 -0.76 -175.42 -177.67 179.53 177.89 175.84 173.80 171.63 168.83 165.93 161.85 158.09 154.55 150.84 147.61 144.72 142.23 140.70 140.58 142.81 147.66 151.40 151.78 150.24 148.06 27.05 22.28 14.07 9.72 6.87 4.76 3.14 1.85 0.86 0.96 0.45 0.05 -0.24 -0.40 -0.44 -0.27 -0.02 0.25 0.36 -0.16 -1.53 -3.50 -5.66 -7.78 124.23 107.37 90.92 82.63 75.39 69.22 62.91 56.68 50.02 41.71 34.33 26.46 17.89 9.26 -0.25 -11.07 -23.54 -38.88 -58.18 -80.37 -102.11 -120.64 -135.37 -147.04 -41.01 -41.94 -41.94 -41.62 -41.31 -41.51 -41.31 -41.31 -41.31 -40.35 -40.35 -40.18 -40.09 -39.83 -39.58 -39.33 -38.79 -38.06 -37.59 -37.20 -37.33 -37.79 -38.27 -38.56 40.51 16.01 2.09 0.94 8.79 0.79 -1.63 -5.01 -8.04 -13.12 -18.22 -24.14 -31.86 -40.50 -51.10 -65.09 -81.01 -102.23 -129.91 -160.59 169.42 144.14 122.49 107.83 -1.10 -1.53 -1.68 -1.77 -1.81 -1.71 -1.63 -1.60 -1.57 -1.66 -1.61 -1.51 -1.38 -1.28 -1.17 -1.02 -0.81 -0.59 -0.33 -0.23 -0.28 -0.40 -0.53 -0.64 -104.38 -137.35 -163.78 -171.20 -175.14 -177.04 -178.74 179.84 178.03 174.97 172.45 170.10 167.43 164.93 162.74 160.45 158.40 156.27 153.91 150.78 148.13 146.26 145.38 144.44 Device S-parameters are available for download off of the website at: http://www.tqs.com Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 3 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier 3.4-3.6 GHz Application Circuit (AP562-PCB3500) Typical O-FDMA Performance at 25°C Frequency (GHz) Channel Power Power Gain Input Return Loss Output Return Loss EVM Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd Vcc 3.4 3.5 +30 +30 11.5 11.5 11 15 5.6 6.7 2.2 1.9 720 685 11.1 11.7 39.5 39.4 400 +5 +12 3.6 Units +30 dBm 11.3 dB 15 dB 5.9 dB 1.7 % 670 mA 12.2 % 38.7 dBm mA V V C12 C21 C13 R3 D2 C14 C15 R1 R2 D1 C16 C6 C17 C7 C18 C10 C1 C25 C11 C8 C22 C20 C24 C23 L3 Notes: The primary RF microstrip line is 50 Ω. Components shown on the silkscreen but not on the schematic are not used. 1. The edge of C23 is placed at 43mil from AP562 RFout pin. 2. The edge of C24 is placed right next to C23. 3. The edge of C22 is placed at 95mil from AP562 RFin pin. 4. The edge of L3 is placed right next to C22. L3 3.4-3.6 GHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW Gain vs. Frequency Current vs Output Average Power vs. Frequency Return Loss T=25°C 12 T=25°C 0 T=25°C 800 -5 S11, S22 (dB) Gain (dB) Collector Current (mA) 750 11 10 9 700 650 -10 600 -15 550 500 -20 8 S11 -25 7 3 3.2 3.4 3.6 Frequency (GHz) 3.8 3.4 GHz 3.2 3.4 3.6 Frequency (GHz) 3.8 4 20 22 EVM vs. Output Average Power vs. Frequency T=25°C 3.5 GHz 3.6 GHz 400 3 4 Efficiency vs Output Average Power vs. Frequency 20 30 32 Power Gain vs Temperature T=25°C 5 24 26 28 Output Power (dBm) Pout = 30 dBm 13 4 EVM (%) 15 10 12 Gain (dB) Collector Efficiency (%) 450 S22 3 2 11 5 1 3.4 GHz 3.5 GHz 3.6 GHz 3.4 GHz 3.5 GHz 3.4 GHz 3.6 GHz 0 0 20 22 24 26 28 Output Power (dBm) 30 32 20 22 24 26 28 Output Power (dBm) 30 32 10 -50 -30 -10 3.5 GHz 10 30 50 Temperature (°C ) 3.6 GHz 70 90 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 4 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Efficiency vs Output Average Power vs Temperature Current vs Output Average Power vs Temperature f=3.5 GHz 800 EVM vs. Output Average Power vs Temperature f=3.5 GHz 25 f=3.5 GHz 5 750 20 4 Efficiency (%) 650 15 600 EVM (%) Icc (mA) 700 3 10 550 500 2 5 1 +25ºC 450 +25ºC -40ºC +85ºC 22 24 26 28 Output Power (dBm) 30 +85ºC +25ºC 0 400 20 -40ºC 32 -40ºC +85ºC 0 20 22 24 26 28 Output Power (dBm) 30 32 20 22 24 26 28 Output Power (dBm) 30 32 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 5 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier 3.4 – 3.6 GHz Application Note: Changing Icq Biasing Configurations The AP562 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Table 1) The recommended circuit configurations shown previously in this datasheet have the device operating with a 400 mA as the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the AP562 measured and configured for 3.5 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Table 1 : Reduced Current Operation VPD (V) 5 5 5 5 5 5 5 IREF (V) 2.92 2.88 2.83 2.8 2.73 2.66 2.6 EVM vs. Output Average Power vs. Icq Efficiency vs. Output Average Power vs Icq f=3.5 GHz 4 f=3.5 GHz 24 100mA 300mA 3 Efficiency (%) R2 (Ω) 270 275 320 380 473 616 857 EVM (%) Icq (mA) 400 350 300 250 200 150 100 2 1 150mA 350mA 200mA 400mA 250mA 20 16 12 100mA 300mA 150mA 350mA 200mA 400mA 250mA 0 8 28 29 30 Pout (dBm) 31 32 28 29 30 Pout (dBm) 31 32 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 6 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Parameter Measurement Information Switching Speed Test Pulse Generator -ve Test Conditions: Vcc = +12V at 25oC Output Power = +30dBm @ 2.5 GHz Rep Rate = 1 KHz, 50% duty cycle Vpd amplitude = +5V R2=200 ohms, C9=12pF (C10, C11 removed for best switching performance) Xtal Detector Voltage =15mV (square law) Cable Length = Lx Oscilloscope +ve Cable Length = Lx Cable Length = Lx CW Signal Source Diode Detector Vpd Attenuator AP56x Evaluation Brd Test Result Waveforms: Vpd = +5V Vpd = +0V RF On Vpd = +5V RF Off Vpd = +5V Delay = 50nS Delay = 50nS RF On Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 7 of 8 May 2009 AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Drawing Outline Drawing Product Marking The component will be laser marked with a “AP562-F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle Function VBIAS N/C RF IN RF Output / Vcc IREF GND MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1A Passes 250V to <500V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com Page 8 of 8 May 2009