Rohm DAN222M Switching diode Datasheet

Data Sheet
Switching Diode
DAN222M
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.8
1.2±0.1
0.13±0.05
0.32±0.05
(3)
0.45
0~0.1
(2)
0.4
0.22±0.05
0.4
0.4
1.2±0.1
0.8±0.1
(1)
1.15
0.5
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
0.22±0.05
0.45
Applications
Ultra high speed switching
0.5±0.05
VMD3
0.4
Construction
Silicon epitaxial planar
Structure
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
0.3±0.1
2.0±0.04
φ1.55±0.05
φ0.5±0.05
(4.0±0.1)
1.3±0.05
0
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
VR
Reverse voltage (DC)
IFM
Forward voltage (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Limits
2.0±0.05
8.0±0.1
5.5±0.2
0~0.1
1.35±0.05
0
3.5±0.05
1.75±0.07
4.0±0.07
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
150
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
0.6±0.05
0
2011.06 - Rev.B
Data Sheet
DAN222M
Ta=150℃
10000
Ta=75℃
Ta=125℃
Ta=150℃
Ta=-25℃
1
0.1
f=1MHz
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
100 200 300 400 500 600 700 800 900 1000
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
80
940
930
920
910
AVE:921.7mV
900
80
60
50
40
AVE:9.655nA
30
1.3
20
1.2
1.1
1
0.9
AVE:1.071pF
0.8
0.7
10
0.6
0
0.5
Ct DISPERSION MAP
IR DISPERSION MAP
1cyc
Ifsm
8.3ms
10
5
AVE:3.50A
0
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
8
7
6
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
10
15
5
4
3
2
1
Ifsm
4
8.3ms 8.3ms
1cyc
3
2
1
AVE:1.93ns
0
0
1
IFSM DISRESION MAP
trr DISPERSION MAP
1000
t
10
1
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
100
9
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms
time
300us
1
0.001
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
Rth(j-a)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
Ifsm
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
20
Ta=25℃
VR=6V
f=1MHz
n=10pcs
1.4
70
VF DISPERSION MAP
20
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1.5
Ta=25℃
VR=80V
n=10pcs
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=100mA
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
10
100
950
1
0.1
0.01
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
10
Ta=125℃
1000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100
8
7
6
5
3
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
AVE:0.97kV
2
1
0
0.01
AVE:2.54kV
4
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.06 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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