Data Sheet Switching Diode DAN222M Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 1.2±0.1 0.13±0.05 0.32±0.05 (3) 0.45 0～0.1 (2) 0.4 0.22±0.05 0.4 0.4 1.2±0.1 0.8±0.1 (1) 1.15 0.5 Features 1) Ultra small mold type. (VMD3) 2) High reliability. 0.22±0.05 0.45 Applications Ultra high speed switching 0.5±0.05 VMD3 0.4 Construction Silicon epitaxial planar Structure ROHM : VMD3 dot (year week factory) Taping specifications (Unit : mm) 0.3±0.1 2.0±0.04 φ1.55±0.05 φ0.5±0.05 (4.0±0.1) 1.3±0.05 0 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Limits 2.0±0.05 8.0±0.1 5.5±0.2 0～0.1 1.35±0.05 0 3.5±0.05 1.75±0.07 4.0±0.07 Unit V V mA mA A mW °C °C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 0.6±0.05 0 2011.06 - Rev.B Data Sheet DAN222M Ta=150℃ 10000 Ta=75℃ Ta=125℃ Ta=150℃ Ta=-25℃ 1 0.1 f=1MHz Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 80 940 930 920 910 AVE:921.7mV 900 80 60 50 40 AVE:9.655nA 30 1.3 20 1.2 1.1 1 0.9 AVE:1.071pF 0.8 0.7 10 0.6 0 0.5 Ct DISPERSION MAP IR DISPERSION MAP 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 0 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 15 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1000 t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 100 9 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 300us 1 0.001 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 1.4 70 VF DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 Ta=25℃ VR=80V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 100 950 1 0.1 0.01 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 10 Ta=125℃ 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:0.97kV 2 1 0 0.01 AVE:2.54kV 4 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A