IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 4 G 6 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ) Benefits Lower Conduction Losses Schottky intrinsic diode with low forward voltage Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Power Density Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFHM830DTRPbF IRFHM830DTR2PBF PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm results in ⇒ Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Units Max. 30 ±20 20 16 40 40 V h h A 160 2.8 37 W 0.022 -55 to + 150 W/°C °C Notes through are on page 8 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 69 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 3.4 5.7 1.8 -6.0 ––– ––– ––– ––– ––– 27 13 2.9 1.8 4.5 3.8 6.3 10 Conditions Max. Units ––– V VGS = 0V, ID = 1mA ––– V/°C Reference to 25°C, ID = 4mA 4.3 VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 20A 7.1 2.35 V VDS = VGS, ID = 50μA ––– mV/°C VDS = VGS, ID = 1mA 500 μA VDS = 24V, VGS = 0V 5 mA VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 20A ––– nC VGS = 10V, VDS = 15V, ID = 20A 20 VDS = 15V ––– ––– VGS = 4.5V nC ––– ID = 20A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.1 9.8 20 9.1 6.7 1797 363 148 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 15V, VGS = 4.5V ID = 20A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM c VSD trr Qrr ton Typ. ––– ––– d Min. Typ. Max. Units ––– ––– 40 ––– ––– 160 h Units mJ A Max. 82 20 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/μs ––– ––– 0.85 V ––– 16 24 ns ––– 17 26 nC Time is dominated by parasitic Inductance S e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g www.irf.com © 2013 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. 3.4 37 46 31 Units °C/W December 16, 2013 IRFHM830DPbF 1000 1000 VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 2.8V 100 BOTTOM 2.8V 10 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 1 0.1 1 Tj = 150°C 1 10 0.1 100 1 1000 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.5 2 2.5 3 3.5 4 4.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 1000 Coss Crss 100 VDS= 24V VDS= 15V VDS= 6V 12 10 8 6 4 2 0 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage 3 VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V www.irf.com © 2013 International Rectifier 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C 100 T J = 25°C 10 100 100μsec 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 1.0 0.2 0.4 0.6 0.8 1.0 0.10 1.2 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 75 3.0 VGS(th) , Gate threshold Voltage (V) ID, Drain Current (A) Limited By Package 50 25 0 2.5 2.0 1.5 ID = 1.0A ID = 10mA ID = 5.0mA ID = 2.0mA ID = 1.0mA 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 16 350 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFHM830DPbF ID = 20A 14 12 10 T J = 125°C 8 6 4 TJ = 25°C 2 0 2 4 6 8 10 12 14 16 18 20 ID TOP 5.8A 11A BOTTOM 20A 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2013 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF PQFN 3.3x3.3 Outline Package Details 8 1 7 2 6 3 5 4 For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3x3.3 Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) :::: !;99! ::::: PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF PQFN 3.3x3.3 Outline Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN MAX A 326.0 330.25 12.835 13.002 B 20.2 20.45 0.795 0.805 C 12.8 13.50 0.504 0.531 D 1.5 2.5 0.059 0.098 102.0 REF 4.016 REF E F 17.8 18.3 0.701 0.720 G 12.4 12.9 0.488 0.508 CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 7.90 8.10 0.311 0.319 3.90 4.10 0.154 0.161 11.70 12.30 0.461 0.484 5.45 5.55 0.215 0.219 3.50 3.70 0.138 0.146 3.50 3.70 0.138 0.146 0.25 0.35 0.010 0.014 1.10 1.30 0.043 0.051 † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Industrial†† (per JEDEC JESD47F††† guidelines) MSL1 PQFN 3.3mm x 3.3mm (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.409mH, RG = 50Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability Revision History Date Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) 12/16/2013 • Updated data sheet with new IR corporate template IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013