MPSW92 One Watt High Voltage Transistor PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 1 EMITTER 12 THERMAL CHARACTERISTICS Characteristic 2 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS W92 YWW G G MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 5 1 Publication Order Number: MPSW92/D MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −300 − Vdc Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −300 − Vdc Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO − −0.25 mAdc Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) IEBO − −0.1 mAdc 25 40 25 − − − OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc fT 50 − MHz Ccb − 6.0 pF − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Box MPSW92G TO−92 (Pb−Free) 5000 Units / Box MPSW92RLREG TO−92 (Pb−Free) 2000 / Tape & Reel Device MPSW92 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSW92 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages http://onsemi.com 3 MPSW92 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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