Rohm BD95371MUV Silicon monolithic integrated circuit Datasheet

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STRUCTURE
Silicon Monolithic Integrated Circuit
TYPE
Step down DC/DC converter Controller IC for NOTE PC
PRODUCT SERIES
FEATURES
BD95371MUV
・Built in H3Reg DC/DC controller
・Switching Frequency Variable (f=200kHz~500kHz)
○ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Parameter
Input Voltage 1
Input Voltage 2
Input Voltage 3
BOOT Voltage
BOOT-SW Voltage
HG-SW Voltage
LG Voltage
Output Voltage
EN Input Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCC
VDD
VIN
BOOT
BOOT-SW
HG-SW
LG
VOUT/Is+/IsEN
Pd1
Pd2
Pd3
Pd4
Topr
Tstg
Tjmax
Limit
7 *1*2
7 *1*2
28 *1*2
35 *1*2
7 *1*2
7 *1*2
VDD
VCC
7 *1
0.34*3
0.70*4
2.20*5
3.56*6
-10~+100
-55~+150
+150
Unit
V
V
V
V
V
V
V
V
V
W
W
W
W
℃
℃
℃
*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 2.7mW/℃ for each increase in Ta of 1℃ over 25℃. (when don’t mounted on a heat radiation board )
*4 Reduced by 5.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 1-layer Glass-epoxy PCB,
copper foil area: 10.29mm2 )
*5 Reduced by 17.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 4-layer Glass-epoxy PCB,
copper foil area: 10.29mm2 2,3-layer copper foil area: 5505mm2)
*6 Reduced by 28.5mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 4-layer Glass-epoxy PCB,
copper foil area: 5505mm2 )
○ OPERATING CONDITIONS(Ta=25℃)
Parameter
Input Voltage 1
Input Voltage 2
Input Voltage 3
BOOT Voltage
SW Voltage
BOOT-SW Voltage
EN Input Voltage
Is Input Voltage
MIN ON Time
Symbol
VCC
VDD
VIN
BOOT
SW
BOOT-SW
EN
Is+/IsTonmin
★ This product is not designed for protection against radioactive rays.
REV. A
MIN
4.5
4.5
4.5
4.5
-0.7
4.5
0
0.7
-
MAX
5.5
5.5
25
30
25
5.5
5.5
2.7
80
Unit
V
V
V
V
V
V
V
V
ns
2/4
○ELECTRICAL CHARACTERISTICS (unless otherwise noted, Ta=25℃ VCC=5V,VDD=5V,EN=3V,VIN=12V,VOUT=1.05V,RFS=36kΩ)
Parameter
[Whole Device]
VCC Bias Current
VCC Standby Current
VIN Bias Current
VIN Standby Current
EN Low Voltage
EN HighVoltage
(Forced Continuous mode)
EN HighVoltage (SLLM Mode)
EN Bias Current
[Under Voltage Locked Out ]
VCC threshold voltage
VCC hysteresis voltage
3
[H REG Control]
ON Time
MAX ON Time
MIN OFF Time
[FET Driver]
HG Higher side ON resistor
HG Lower side ON resistor
LG Higher side ON resistor
LG Lower side ON resistor
[SCP]
SCP strat-up Voltage
SCP delay time
[OVP]
FB threshold voltage
[Soft start]
Charge current
Standby voltage
[Current Limit Block]
Setting Current
Current limit threshold
[Output Voltage setting ]
VOUT typical voltage
Is+ Input current
Is- Input current
[Power Good]
FB Power Good
Discharge ON resistor
[BOOT Diode]
VF voltage
MIN
Standard Value
TYP
MAX
Icc
Iccstb
Iin
Iinstb
VEN_low
GND
1500
0
30
0
-
1800
10
80
10
0.8
μA
μA
μA
μA
V
VENth_con
2.3
-
3.8
V
VENth_sllm
Ien
4.5
-
15
5.5
25
V
μA
EN=3V
Vcc_UVLO
dVcc_UVLO
3.7
100
4.0
160
4.3
220
V
mV
VCC:Sweep up
VCC:Sweep down
Ton
Tonmax
Toffmin
194
-
219
3.5
490
244
700
ns
μs
ns
HGhon
HGlon
LGhon
LGlon
-
3.0
2.0
3.0
0.5
6.0
4.0
6.0
1.0
Ω
Ω
Ω
Ω
Vscp
Tscp
0.345
-
0.420
2.5
0.495
-
V
ms
Vovp
0.825
0.900
0.975
V
Iss
Vss_stb
1
-
2
-
3
50
μA
mV
Iilim
Ilim
75
10
100
125
μA
mV
RILIM=100kΩ
REF
IIs+
IIs-
0.743
-1
-1
0.750
0
0
0.757
1
1
V
μA
μA
Is+=1.05V
Is-=1.05V
VPGOOD
Ronpgood
0.38
-
0.47
50
0.56
150
V
Ω
VF
0.4
0.5
0.6
V
Symbol
REV. A
Unit
Condition
EN=0V
EN=0V
IF=1mA
3/4
○ PHYSICAL DIMENSIONS
○ Pin Number
4.0±0.1
4.0±0.1
Pin
number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
reverse
95371
1.0Max.
Lot.No
1pin mark
0.02 +0.03
-0.02
(0.22)
S
0.08 S
C0.2 2.1±0.1
5
6
16
1.0
10
15
2.1±0.1
0.4±0.1
1
20
11
0.25 +0.05
-0.04
0.5
VQFN020V4040 (Unit:mm)
VCC
17 VIN
Reference
Block
BG
H Reg
16
BOOT
Soft Start Block
+
REF×1.2
FB
BG
REF
VDD
SLLM
+
2.5ms Delay
EN/UVLO
GND
SS
SCP
3
20
TSD
Thermal
Protection
UVLO
+
-
SS
1
EN
REF×0.56
SS×0.56
FB
VOUT
SS
EN/SLLM
ILIM
VCC
FB
VOUT
FREQ
FS
IsIs+
PGND
LG
VDD
SW
HG
BOOT
VIN
OUT
PGOOD
GND
FIN
VIN
VDD
EN/SLLM
2
PIN name
Please connect FIN to GND.
○ BLOCK DIAGRAM
4
OVP
15
SLLM
Q
R
Controller
Driver
SW
VDD
Circuit
S
+
+
OVP
+
-
Current Limit
ls+
+
FREQ
7
9
ls-
10
Is+
ILIM
+
8
VOUT
REV. A
6
12
LG
11
PGND
Is+
REF
×0.56
FB
UVLO
ILIM
SCP
TSD
FS
13
SLLM
18
SS
REF
VOUT
HG
OUT
5
VIN
14
TM
Block
FB
Pin Name
3
ILIM
19
+
-
PGOOD
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●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2. Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
3. Power supply lines
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.
4. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
5. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
6. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
7. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
8. ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
9. Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation
of this circuit is assumed.
BD95371MUV
TSD on temperature [°C] (typ.)
175
Hysteresis temperature [°C](typ.)
15
10. Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
11. Heat sink (FIN)
Since the heat sink (FIN) is connected with the Sub, short it to the GND.
REV. A
Notice
Notes
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