TGS MBRF1045CT To-220f plastic-encapsulate diode Datasheet

TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF1030,35,40,45,50CT
TO-220F
SCHOTTKY BARRIER RECTIFIER
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
MBRF10
MBRF10
MBRF10
MBRF10
30CT
35CT
40CT
45CT
50CT
30
35
40
45
50
V
21
24.5
28
31.5
35
V
10
A
120
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IO
IFSM
PD
RΘJA
Average rectified output current
Unit
MBRF10
Non-Repetitive peak forward surge current
8.3ms half sine wave
A,Nov,2010
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Symbol
V(BR)
IR
Device
Test conditions
Min
MBRF1030CT
30
MBRF1035CT
35
MBRF1040CT
IR=0.1mA
45
MBRF1050CT
50
VR=30V
MBRF1035CT
VR=35V
MBRF1040CT
VR=40V
MBRF1045CT
VR=45V
MBRF1050CT
VR=50V
Max
Unit
V
40
MBRF1045CT
MBRF1030CT
Typ
0.1
mA
MBRF1030CT
MBRF1035CT
VF(1)
MBRF1040CT
0.7
IF=5A
MBRF1045CT
MBRF1050CT
Forward voltage
0.8
V
MBRF1030CT
MBRF1035CT
VF(2)
MBRF1040CT
0.84
IF=10A
MBRF1045CT
MBRF1050CT
Typical total capacitance
Ctot
MBRF1030-50CT
0.95
VR=4V,f=1MHz
150
pF
A,Nov,2010
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