Low Frequency Transistor (20V, 3A) 2SC4115S zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zDimensions(Unit:mm) 2SC4115S 2±0.2 (15Min.) 3Min. 3±0.2 4±0.2 zStructure Epitaxial planar type NPN silicon transistor 0.45+0.15 −0.05 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 5 zAbsolute maximum ratings (Ta=25°C) Parameter (1) (2) (3) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V (1) Emitter (2) Collector (3) Base ∗ Denotes hFE A (DC) 2 Collector current IC Collector power dissipation PC 0.4 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ROHM : SPT EIAJ : SC-72 A (Pulse) ∗ 5 Single pulse Pw=10ms zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage Unit Conditions BVEBO 6 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=30V Emitter cutoff current IEBO − − 0.1 µA VEB=5V VCE(sat) − 0.2 0.5 V IC/IB=2A/0.1A hFE 120 − 390 − VCE=2V, IC=0.1A Transition frequency fT − 290 − MHz Output capacitance Cob − 25 − pF Collector-emitter saturation voltage DC current transfer ratio ∗ VCE=2V, IE= −0.5A, f=100MHz VCE=10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.11 - Rev.B 2SC4115S Data Sheet zPackaging specifications and hFE Package Taping Code TP Basic ordering unit (pieces) Type hFE 2SC4115S QRS 5000 hFE values are classified as follows : Item Q R S hFE 120 to 270 180 to 390 270 to 560 zElectrical characteristic curves 1 0.5 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.2 4mA 0.8 2mA 0.4 2000 Ta=100°C 25°C −40°C 1000 500 200 100 50 20 10 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 Fig.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 0.2 5 10 0.2 Ta=100°C 25°C −40°C 0.1 50m 20m 10m 5m 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 0.5 0.2 Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 5 10 Ta=25°C VCE=2V 500 200 100 50 20 10 5 2 1 −1 −2 Collector-emitter saturation voltage vs. collector current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (A) Fig.7 10mA 2 5mA 1 IB=0A 0 0 1 Fig.8 Gain bandwidth product vs. emitter current 2/2 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 1 Grounded emitter output characteristics ( ) lC/lB=20 0.5 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector current ( ) 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.5 IC/IB=50 0.1 5 10 15mA 3 Grounded emitter output characteristics ( ) 0.5 Ta=25°C 35mA 30mA 25mA 20mA 4 IB=0A 1.0 IC/IB=10 50mA 45mA 40mA COLLECTOR CURRENT : IC (A) 1 50m 0.8 1 DC current gain vs. collector current 2 0.6 2 COLLECTOR CURRENT : IC (A) Fig.4 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics 5000 DC CURRENT GAIN : hFE 6mA 0 0 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 1.6 5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 Ta=25°C 12mA 10mA 8mA 20mA 18mA 16mA 14mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 VCE=2V 5 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 Ta=25°C f=1MHz IE=0A IC=0A 500 Cob 200 100 Cob 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2009.11 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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