B1100LB 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260C/10 Second at Terminal Plastic Material: UL Flammability Classification Rating 94V-0 B SMB A C D Mechanical Data J Case: SMB, Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: B110LB and Date Code Weight: 0.093 grams (approx.) H Maximum Ratings and Electrical Characteristics G E Dim Min Max A 3.30 3.94 B 4.06 4.57 C 1.96 2.21 D 0.15 0.31 E 5.00 5.59 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 120C @ TT = 100C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Symbol B1100LB Unit VRRM VRWM VR 100 V VR(RMS) 70 V IO 1.0 2.0 A IFSM 50 A VFM 0.75 V @ TA = 25C @ TA = 100C IRM 0.5 5.0 mA Cj 100 pF Typical Thermal Resistance Junction to Terminal (Note 1) RJT 22 K/W Tj, TSTG -65 to +150 C Forward Voltage @ IF = 1.0A, TA = 25C Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30077 Rev. A-2 1 of 2 B1100LB 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) 4 3 2 1 0 1.0 0.1 Tj - 25°C IF Pulse Width = 300µs 0.01 25 50 75 100 125 150 0 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 280 50 Single Half Sine-Wave (JEDEC Method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.2 40 30 20 10 Tj = 150°C f = 1.0MHz Tj = 25°C 240 200 160 120 80 40 0 0 1 10 100 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current DS30077 Rev. A-2 0.1 2 of 2 B1100LB