DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2004DWKQ) Load Switch Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) SOT363 ESD PROTECTED TO 2kV D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN2004DWK-7 Notes: Case SOT363 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information NAB = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M = Month (ex: 9 = September) NAB YM NAB YM Date Code Key Year 2006 Code T Month Code Jan 1 2007 U Feb 2 DMN2004DWK Document number: DS30935 Rev. 7 - 2 …. …. Mar 3 2013 A Apr 4 2014 B May 5 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 7 www.diodes.com February 2017 © Diodes Incorporated DMN2004DWK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 540 390 mA IDM 1.5 A Symbol Value Unit PD 200 mW RJA 625 °C/W TJ, TSTG -65 to +150 °C Drain Current (Note 5) TA = +25°C TA = +85°C Steady State Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS — — 1 µA VGS = ±4.5V, VDS = 0V Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 0.4 0.5 0.7 0.55 0.70 0.9 Ω ON CHARACTERISTICS (Note 7) VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 — — mS Diode Forward Voltage (Note 7) VSD 0.5 — 1.4 V Input Capacitance Ciss — 36 150 pF Output Capacitance Coss — 5.7 25 pF Reverse Transfer Capacitance Crss — 4.2 20 pF Total Gate Charge (VGS = 4.5V) Qg — 0.53 — Total Gate Charge (VGS = 8.0V) Qg — 0.95 — Qgs — 0.08 — VDS = 10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 7) Gate-Source Charge nC Qgd — 0.07 — Turn-On Delay Time tD(ON) — 4.1 — ns Turn-On Rise Time tR — 7.3 — ns Turn-Off Delay Time tD(OFF) — 13.8 — ns tF — 10.5 — ns Gate-Drain Charge Turn-Off Fall Time Notes: VDS = 16V, VGS = 0V f = 1.0MHz VDS = 10V, ID = 250mA VDD = 10V, RL = 47Ω, VGEN = 4.5V, RGEN = 10Ω 5. Device mounted on FR-4 PCB. 6. Pulse width 10µs, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN2004DWK Document number: DS30935 Rev. 7 - 2 2 of 7 www.diodes.com February 2017 © Diodes Incorporated ID, DRAIN CURRENT (A) DMN2004DWK 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS GATE-SOURCE VOLTAGE VOLTAGE (V) GS,, GATE-SOURCE Fig. 2 Typical Transfer Fig. 2 Reverse Drain Current vs.Characteristic Source-Drain Voltage RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () Tch , CHANNEL TEMPERATURE (° (癈 C)) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DWK Document number: DS30935 Rev. 7 - 2 3 of 7 www.diodes.com February 2017 © Diodes Incorporated DMN2004DWK RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V, ID = 1.0A 1.4 1.2 1 VGS = 2.5V, ID = 500mA 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Fig. 8 On-Resistance Variation with Temperature IDR, REVERSE DRAIN CURRENT (A) ZERO GATE VOLTAGE DRAIN CURRENT (nA) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage CT , JUNCTION CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 60 50 f=1MHz Ciss 40 30 20 C oss 10 C rss 0 1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DWK Document number: DS30935 Rev. 7 - 2 4 of 7 www.diodes.com 0 5 10 15 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Junction Capacitance 20 February 2017 © Diodes Incorporated DMN2004DWK 10 RDS(on) Limited VDS = 10V 6 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) V GS GATE THRESHOLD VOLTAGE (V) 8 ID = 250mA 4 2 1 DC PW = 10s 0.1 PW = 1s PW = 100ms PW = 10ms TJ(m ax) = 150°C 0.01 PW = 1ms PW = 100µs TA = 25°C V GS = 4.5V Single Pulse DUT on 1 * MRP Board 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 Q g, TOTAL GATE CHARGE (nC) Figure 13 Gate Charge DMN2004DWK Document number: DS30935 Rev. 7 - 2 5 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14 SOA, Safe Operation Area 100 February 2017 © Diodes Incorporated DMN2004DWK Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -All Dimensions in mm E1 F b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 Y X DMN2004DWK Document number: DS30935 Rev. 7 - 2 6 of 7 www.diodes.com February 2017 © Diodes Incorporated DMN2004DWK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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