Inchange Semiconductor Product Specification BD440 BD442 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type BD439,BD441 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS Collector-base voltage Open emitter -60 BD440 Collector-emitter voltage V -80 BD442 VCEO UNIT -60 BD440 VCBO VALUE Open base V -80 BD442 -5 V Collector current (DC) -4 A ICM Collector current-Peak -7 A IB Base current -1 A PC Collector power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VEBO Emitter -base voltage IC Open collector TC=25℃ Inchange Semiconductor Product Specification BD440 BD442 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A VBE-1 Base-emitter on voltage IC=-10mA ; VCE=-5V VBE-2 Base-emitter on voltage IC=-2A ; VCE=-1V VCEO(SUS) ICBO ICES Collector-emitter sustaining voltage CONDITIONS hFE-1 DC current gain hFE-3 DC current gain V V V V -80 BD442 BD440 VCB=-60V; IE=0 BD442 VCB=-80V; IE=0 BD440 VCE=-60V; VBE=0 BD442 VCE=-80V; VBE=0 VEB=-5V; IC=0 -100 μA -100 μA -1 mA 20 IC=-10mA ; VCE=-5V 130 15 IC=-0.5A ; VCE=-1V BD440 40 140 25 IC=-2A ; VCE=-1V 15 BD442 Transition frequency -0.8 IC=-0.1A; IB=0 BD442 DC current gain UNIT -60 BD440 BD440 hFE-2 MAX -1.5 Collector cut-off current Emitter cut-off current TYP. -0.58 Collector cut-off current IEBO fT MIN IC=-250mA; VCE=-1V 2 3 MHz Inchange Semiconductor Product Specification BD440 BD442 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3