NTD5865NL N-- Channel Power MOSFET 60 V, 40 A, 16 mΩ Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb--Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Value Unit Drain--to--Source Voltage VDSS 60 V Gate--to--Source Voltage -- Continuous VGS 20 V Gate--to--Source Voltage -- Non--Repetitive (tp < 10 ms) VGS 30 V ID 40 A Continuous Drain Current (RθJC) Power Dissipation (RθJC) TC = 25C Steady State Pulsed Drain Current TC = 100C TC = 25C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain--to--Source Avalanche Energy (L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 26 PD 52 RDS(on) MAX IDM 137 A TJ, Tstg -- 55 to 150 C IS 40 A EAS 36 mJ IAS 27 A TL 260 C 40 A 19 mΩ @ 4.5 V D G S N--CHANNEL MOSFET 4 4 THERMAL RESISTANCE MAXIMUM RATINGS Value Unit Junction--to--Case (Drain) RθJC 2.4 C/W Junction--to--Ambient -- Steady State (Note 1) RθJA 42 1 2 3 DPAK CASE 369AA (Surface Mount) STYLE 2 1 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 65NLG Symbol 1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. ID MAX 16 mΩ @ 10 V W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Parameter V(BR)DSS 60 V Symbol Parameter http://onsemi.com 2 1 Drain 3 Gate Source 4 Drain YWW 58 65NLG 1 2 3 Gate Drain Source Y = Year WW = Work Week 5865NL = Device Code G = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 June, 2010 -- Rev. 1 1 Publication Order Number: NTD5865NL/D NTD5865NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain--to--Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 55 TJ = 25C Zero Gate Voltage Drain Current IDSS Gate--to--Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 60 V mV/C 1.0 TJ = 150C mA 100 100 nA 2.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 1.0 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain--to--Source On Resistance RDS(on) VGS = 10 V, ID = 20 A 13 16 mΩ Drain--to--Source on Resistance RDS(on) VGS = 4.5 V, ID = 20 A 16 19 mΩ gFS VDS = 15 V, ID = 20 A 15 S 1400 pF Forward Transconductance 5.6 mV/C CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate--to--Source Charge QGS Gate--to--Drain Charge Total Gate Charge Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = 25 V 137 95 29 nC VGS = 10 V, VDS = 48 V, ID = 40 A 1.1 VGS = 4.5 V, VDS = 48 V, ID = 40 A 15 nC 1.3 Ω td(on) 8.4 ns tr 12.4 QGD QG(TOT) 4 8 RG SWITCHING CHARACTERISTICS (Note 3) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 48 V, ID = 40 A, RG = 2.5 Ω tf 26 4.4 DRAIN--SOURCE DIODE CHARACTERISTICS TJ = 25C 0.95 TJ = 125C 0.85 Forward Diode Voltage VSD Reverse Recovery Time tRR 20 Charge Time ta 13 Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A VGS = 0 V, dIs/dt = 100 A/ms, IS = 40 A QRR 1.2 V ns 7 13 nC 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTD5865NL--1G IPAK (Straight Lead) (Pb--Free) 75 Units / Rail NTD5865NLT4G DPAK (Pb--Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5865NL TYPICAL CHARACTERISTICS 80 ID, DRAIN CURRENT (A) 50 3.4 V 3.2 V 30 20 3V 10 2.8 V 0 1 2 40 30 TJ = 25C 20 3 4 5 TJ = 125C 1 2 3 4 5 VGS, GATE--TO--SOURCE VOLTAGE (V) Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics TJ = 25C 0.025 0.020 0.015 3 4 5 6 7 8 9 10 VGS, GATE--TO--SOURCE VOLTAGE (V) 0.018 TJ = 25C VGS = 4.5 V 0.016 0.014 VGS = 10 V 0.012 0.010 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 3. On--Resistance vs. Gate Voltage Figure 4. On--Resistance vs. Drain Current 10000 2.0 1.8 TJ = --55C VDS, DRAIN--TO--SOURCE VOLTAGE (V) ID = 40 A 2 50 0 0.030 0.010 60 10 2.6 V RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 3.6 V 40 VDS 10 V 70 TJ = 25C 4.5 V 60 0 RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) 3.8 V ID = 40 A VGS = 10 V VGS = 0 V TJ = 150C 1.6 IDSS, LEAKAGE (mA) ID, DRAIN CURRENT (A) 70 80 4V VGS = 10 V 1.4 1.2 1.0 1000 TJ = 125C 0.8 0.6 --50 --25 0 25 50 75 100 125 150 100 10 TJ, JUNCTION TEMPERATURE (C) 20 30 40 50 VDS, DRAIN--TO--SOURCE VOLTAGE (V) Figure 5. On--Resistance Variation with Temperature Figure 6. Drain--to--Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTD5865NL TYPICAL CHARACTERISTICS 10 1800 1600 Ciss C, CAPACITANCE (pF) 1400 VGS, GATE--TO--SOURCE VOLTAGE (V) VGS = 0 V TJ = 25C 1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 60 2 0 VDS = 48 V ID = 40 A TJ = 25C 0 5 10 15 20 25 30 40 td(off) tr 10 VGS = 0 V 35 IS, SOURCE CURRENT (A) t, TIME (ns) Qgd Figure 8. Gate--to--Source vs. Total Charge td(on) tf 1 10 TJ = 25C 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 100 RG, GATE RESISTANCE (Ω) VSD, SOURCE--TO--DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 40 VGS = 10 V SINGLE PULSE TC = 25C 100 ms 10 ms 10 ms 1 ms 10 dc 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 ID = 27 A 35 AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) Qgs 4 Figure 7. Capacitance Variation 100 0.1 6 Qg, TOTAL GATE CHARGE (nC) VDD = 48 V ID = 40 A VGS = 10 V 100 8 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 1000 1 QT 1 10 100 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 30 25 20 15 10 5 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE Figure 11. Maximum Rated Forward Biased Safe Operating Area 150 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD5865NL TYPICAL CHARACTERISTICS RθJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Duty Cycle = 0.5 1 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0.01 0.1 1 NTD5865NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE A C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE --T-- E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 -----0.035 0.050 0.155 ------ T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 -----0.89 1.27 3.93 ------ NTD5865NL PACKAGE DIMENSIONS IPAK CASE 369D--01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 --T-SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 ------ MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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