TI1 ISO35MDWR Isolated 3.3-v half and full-duplex rs-485 transceiver Datasheet

ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
ISOLATED 3.3-V HALF AND FULL-DUPLEX RS-485 TRANSCEIVERS
Check for Samples: ISO15, ISO35, ISO15M, ISO35M
FEATURES
DESCRIPTION
•
The ISO15 is an isolated half-duplex differential line
transceiver while the ISO35 is an isolated full-duplex
differential line driver and receiver for TIA/EIA
485/422 applications. The ISO15M and ISO35M have
extended ambient temperature ratings of –55°C to
125°C while the ISO15 and ISO35 are specified
over –40°C to 85°C.
1
•
•
•
•
•
•
•
•
These devices are ideal for long transmission lines
since the ground loop is broken to allow for a much
larger common-mode voltage range. The symmetrical
barrier of the device is tested to provide isolatlion of
4000 VPK per VDE and 2500 VRMS per UL and CSA
between the bus-line transceiver and the logic-level
interface.
Any cabled I/O can be subjected to electrical noise
transients from various sources. These noise
transients can cause damage to the transceiver
and/or near-by sensitive circuitry if they are of
sufficient magnitude and duration. These isolated
devices can significantly increase protection and
reduce the risk of damage to expensive control
circuits.
APPLICATIONS
•
•
•
•
•
•
Security Systems
Chemical Production
Factory Automation
Motor/motion Control
HVAC and Building Automation Networks
Networked Security Stations
ISO15
DW PACKAGE
GND1
GND1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
function diagram
Vcc2
GND2 R
nc
RE
B
DE
A
D
nc
GND2
GALVANIC ISOLATION
Vcc1
GND1
R
RE
DE
D
ISO35
DW PACKAGE
3
4
5
6
13
12
B
A
GND2
Vcc1
GND1
R
RE
DE
D
GND1
GND1
function diagram
1
2
16
15
Vcc2
GND2
3
4
5
6
7
8
14
13
12
A
B
Z
Y
GND2
11
10
9
GND2
PRODUCT
FOOTPRINT
TEMP RATING
MARKING
ISO15
Half Duplex
–40°C to 85°C
ISO15
ISO35
Full Duplex
–40°C to 85°C
ISO35
ISO15M
Half Duplex
–55°C to 125°C
ISO15M
ISO35M
Full Duplex
–55°C to 125°C
ISO35M
R
3
4
RE
5
DE
D
6
GALVANIC ISOLATIO N
•
4000-VPK VIOTM, 560-VPK VIORM per IEC
60747-5-2 (VDE 0884, Rev 2)
UL 1577, IEC 61010-1, IEC 60950-1 and CSA
Approved
1/8 Unit Load – Up to 256 Nodes on a Bus
Meets or Exceeds TIA/EIA RS-485
Requirements
Signaling Rates up to 1 Mbps
Thermal Shutdown Protection
Low Bus Capacitance – 16 pF (Typ)
50 kV/μs Typical Transient Immunity
Fail-safe Receiver for Bus Open, Short, Idle
3.3-V Inputs are 5-V Tolerant
14
13
12
11
A
B
Z
Y
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2012, Texas Instruments Incorporated
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1)
VALUE
UNIT
–0.3 to 6
V
Voltage at any bus I/O terminal
–9 to 14
V
VIT
Voltage input, transient pulse, A, B, Y, and Z (through 100Ω, see Figure 11)
–50 to 50
V
VI
Voltage input at any D, DE or RE terminal
–0.5 to 7
V
IO
Receiver output current
±10
mA
VCC
Input supply voltage.
VO
(2)
VCC1, VCC2
Human Body Model
ESD
TJ
(1)
(2)
Electrostatic
discharge
JEDEC Standard 22,
Test Method A114-C.01
Charged Device
Model
JEDEC Standard 22,
Test Method C101
Machine Model
ANSI/ESDS5.2-1996
Bus pins and GND1
±6
Bus pins and GND2
±16
All pins
±4
kV
kV
±1
All pins
Maximum junction temperature
±200
V
170
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values
RECOMMENDED OPERATING CONDITIONS
VCC
Supply Voltage, VCC1, VCC2
VOC
Voltage at either bus I/O terminal
VIH
High-level input voltage
VIL
Low-level input voltage
VID
Differential input voltage
RL
Differential input resistance
IO
Output current
1/tUI
Signaling rate
TA
Ambient temperature
TJ
Operating junction temperature
A, B
D, DE, RE
MIN
TYP
MAX
3.15
3.3
3.6
V
–7
12
V
2
VCC
0
0.8
–12
A with respect to B
Receiver
V
12
54
Driver
UNIT
V
Ω
60
–60
60
–8
8
ISO15x and ISO35x
mA
1
ISO15 and ISO35
-40
85
ISO15M and ISO35M
-55
125
ISO15 and ISO35
–40
150
ISO15M and ISO35M
–55
150
Mbps
°C
°C
SUPPLY CURRENT
over recommended operating condition (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
ICC1
Logic-side supply
current
ISO35x and RE at 0 V or VCC, DE at 0 V, No load (driver disabled)
ISO15x
RE at 0 V or VCC, DE at VCC, No Load (driver enabled)
ICC2
Bus-side supply
current
ISO35x and RE at 0 V or VCC, DE at 0 V, No load (driver disabled)
ISO15x
RE at 0 V or VCC, DE at VCC, No Load (driver enabled)
2
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TYP
MAX
8
15
8
19
UNIT
mA
mA
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
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DRIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
| VOD |
TEST CONDITIONS
Differential output voltage magnitude
MIN
IO = 0 mA, no load
2.5
RL = 54 Ω, See Figure 1
1.5
2
2
2.3
RL = 100 Ω (RS-422), See Figure 1
Vtest from –7 V to +12 V, See Figure 2
Δ|VOD|
Change in magnitude of the differential
output voltage
VOC(SS)
Steady-state common-mode output voltage
TYP
See Figure 3
Change in steady-state common-mode
output voltage
VOC(pp)
Peak-to-peak common-mode output voltage See Figure 3
II
Input current
UNIT
VCC
V
1.5
See Figure 1 and Figure 2
ΔVOC(SS)
MAX
–0.2
0
0.2
1
2.6
3
–0.1
0.1
0.5
V
V
–10
D, DE, VI at 0 V or VCC1
V
10
μA
ISO15 See receiver input current
VY or VZ = 12 V
IOZ
High-impedance state output current
ISO35
90
VY or VZ = 12 V, VCC = 0
VY or VZ = –7 V
Other
input
at 0 V
VY or VZ = –7 V, VCC = 0
VA or VB at –7 V
–10
μA
-10
Other
input
at 0 V
Short-circuit output current
VA or VB at 12 V
COD
Differential output capacitance
VI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
CMTI
Common-mode transient immunity
VI = VCC or 0 V, See Figure 12 and Figure 13
IOS
90
–250
25
250
mA
16
pF
50
kV/μs
TYP MAX
UNIT
DRIVER SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
MIN
tPLH, tPHL Propagation delay
340
tsk(p)
Pulse skew (|tPHL – tPLH|)
tr, tf
Differential output signal rise time, fall time
tPHZ
Propagation delay, high-level-to-high-impedance output
tPZH
Propagation delay, high-impedance-to-high-level output
tPLZ
Propagation delay, low-level to high-impedance output
tPZL
Propagation delay, standby-to-low-level output
ISO15 and ISO35
See Figure 4
ISO15M and ISO35M
See Figure 5
See Figure 6
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6
120
180
300
120
180
350
205
530
330
530
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ns
ns
ns
3
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIT(+)
Positive-going input threshold voltage
IO = –8 mA
VIT(–)
Negative-going input threshold voltage
IO = 8 mA
Vhys
Hysteresis voltage (VIT+ – VIT–)
VO
Output voltage
VID = 200 mV, See
Figure 7
IOZ
High-impedance state output current
VI = –7 to 12 V, Other input = 0 V
85oC ≤ TA ≤ 125oC
Bus input current
TYP MA
X
–20
–200
-55oC ≤ TA ≤ 125oC
IO = –8 mA
2.4
IO = 8 mA
0.4
–1
1
50 100
VA or VB = 12 V, VCC = 0
50 100
VA or VB = 12 V, VCC = 0
mV
mV
VA or VB = 12 V
VA or VB = 12 V
UNIT
mV
50
-55oC ≤ TA ≤ 85oC
IA or IB
MIN
200
Other input at
0V
200
VA or VB = –7 V
–100
–40
VA or VB = –7 V, VCC = 0
–100
–30
V
μA
μA
IIH
High-level input current, RE
VIH = 2 V
–10
μA
IIL
Low-level input current, RE
VIL = 0.8 V
–10
μA
RID
Differential input resistance
A, B
48
kΩ
CID
Differential input capacitance
VI = 0.4 sin (4E6πt) + 0.5V, DE at 0 V
16
pF
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay
tsk(p)
Pulse skew (|tPHL – tPLH|)
TEST CONDITIONS
MIN
TYP
ISO15x and ISO35x
4
ISO15M and
ISO35M
2
6
13
25
13
25
tPZH,
tPZL
Propagation delay, high-impedance-to-high-level output
Propagation delay, high-impedance-to-low-level output
tPHZ,
tPLZ
Propagation delay, high-level-to-high-impedance output
Propagation delay, low-level to high-impedance output
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18
See Figure 8
2
Output signal rise and fall time
4
13
ISO15 and ISO35
tr, tf
UNIT
100
ISO15 and ISO35
ISO15M and
ISO35M
MAX
DE at 0 V, See Figure 9
and Figure 10
ns
ns
Copyright © 2008–2012, Texas Instruments Incorporated
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SLOS580F – MAY 2008 – REVISED JANUARY 2012
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PARAMETER MEASUREMENT INFORMATION
VCC1
VCC2
IOA
DE
DE
A
II
0 or
VCC1
D
D
0 or 3 V
VOD
B
GND1
375 W
A
+
VOD
-
B
60 W
IOB
GND2
375 W
GND2
VI
VOA
VOB
GND1
-7 V to 12 V
GND2
Figure 1. Driver VOD Test and Current Definitions
Figure 2. Driver VOD With Common-Mode Loading
Test Circuit
VCC1
IOA
DE
27 W
A
A
VA
B
VB
II
VOD
Input
D
VI
B
GND1
VOB
VOC
27 W
IOB
GND2
VOA
VOC(SS)
VOC(PP)
VOC
GND2
GND1
Figure 3. Test Circuit and Waveform Definitions For The Driver Common-Mode Output Voltage
3V
DE
VCC1
A
D
Input
Generator
VI
B
VI
VOD
RL = 54 W
±1%
CL = 50 pF
±20%
tPHL
tPLH
VOD
50 W
50%
50%
90%
50%
10%
GND1
tr
Generator: PRR = 500 kHz, 50% duty
cycle, tr <6ns, tf <6ns, ZO = 50 W
VOD(H)
90%
50%
10%
tf
VOD(L)
CL includes fixture and
Instrumentation Capacitance
Figure 4. Driver Switching Test Circuit and Voltage Waveforms
NOTE: Driver output pins are A and B for the ISO15 (See Figure 1 through Figure 4). These correspond to
ISO35 pins Y and Z
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ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
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PARAMETER MEASUREMENT INFORMATION (continued)
A
3V
VO
S1
D
3V
VI
B
DE
tPZH
CL includes fixture and
Instrumentation
capacitance
50 W
50%
0V
RL = 110 W
±20%
CL = 50 pF ±20%
Input
Generator
50%
50%
VO
VOH
90%
0V
tPHZ
Figure 5. Driver High-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms
3V
RL = 110W
±1%
A
0V
S1
D
3V
B
0V
tPLZ
VO
CL = 50 pF ±20%
VI
50%
tPZL
DE
Input
Generator
50%
VI
VO
50%
5V
10%
50 W
GND1
VOL
GND2
Generator: PRR = 500 kHz, 50% duty cycle,
tr <6ns, tf <6ns, ZO = 50W
CL includes fixture and
Instrumentation capacitance
Figure 6. Driver Low-Level Output Enable and Disable Time Test Circuit and Voltage Waveform
NOTE: Driver output pins are A and B for the ISO15 (SeeFigure 5 through Figure 6). These correspond to ISO35
pins Y and Z
A
IA
IO
R
V
VA
VA+ V B
ID
B
VIC
VO
IB
VB
2
Figure 7. Receiver Voltage and Current Definitions
3V
A
Input
Generator
VI
R
50 W
1.5 V
B
Generator: PRR = 500 kHz, 50% duty cycle,
tr <6ns, tf <6ns, ZO = 50 W
RE
VO
CL = 15 pF
±20%
50%
VI
tPHL
tPLH
VO
50%
50%
tr
CL includes fixture and
instrumentation capacitance
0V
VOH
90%
50%
10%
VOL
tf
Figure 8. Receiver Switching Test Circuit and Waveforms
6
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PARAMETER MEASUREMENT INFORMATION (continued)
1.5 V
R VO
B
0V
Input
Generator
VCC
A
VI
1 kW ±1%
3V
VI
S1
0V
CL = 15 pF ±20%
RE
50%
50%
tPHZ
tPZH
CL includes fixture
and instrumentation
capacitance
90%
50%
VO
VOH
˜˜ 0V
50 W
Generator: PRR = 500 kHz, 50% duty cycle,
tr <6ns, tf <6ns, ZO = 50W
Figure 9. Receiver Enable Test Circuit and Waveforms, Data Output High
R
B
1.5 V
Input
Generator
VCC
A
0V
VI
VO 1 kW ±1%
RE
3V
S1
VI
CL = 15 pF ±20%
50%
50%
0V
CL includes fixture
and instrumentation
capacitance
tPZL
VO
50 W
tPLZ
50%
VCC
10%
VOL
Generator: PRR = 500 kHz, 50% duty cycle,
tr <6ns, tf <6ns, ZO = 50W
Figure 10. Receiver Enable Test Circuit and Waveforms, Data Output Low
0V
RE
A
R
B
Pulse Generator
15 ms duration
1% duty cycle
tr, tf <100 ns
100 W ±1%
+
-
D
DE
3V
Note: This test is conducted to test survivability only.
Data stability at the R output is not specified.
Figure 11. Transient Over-Voltage Test Circuit
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC2
C = 0.1 mF VCC1
±1%
2V
C = 0.1 mF ±1%
DE
GND 1
S1
D
54 W
VOH or VOL
0.8 V
R
VOH or VOL
RE
1 kW
GND 2
GND 1
CL = 15 pF
(includes probe and
jig capacitance)
V TEST
Figure 12. Half-Duplex Common-Mode Transient Immunity Test Circuit
C = 0.1 mF V
CC1
±1%
2V
VCC2
Y
DE
GND1
D
C = 0.1 mF ±1%
VOH or VOL
54 W
S1
Z
A
1.5 V or 0V
0.8 V
R
VOH or VOL
54 W
RE
1 kW
B
0 V or 1.5 V
GND 2
GND 1
CL = 15 pF
(includes probe and
jig capacitance)
V TEST
Figure 13. Full-Duplex Common-Mode Transient Immunity Test Circuit
8
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DEVICE INFORMATION
Table 1. Driver Function Table
VCC1
(1)
VCC2
INPUT
(D)
(1)
ENABLE
INPUT
(DE)
OUTPUTS
A or Y
(1)
B or Z
PU
PU
H
H
H
L
PU
PU
L
H
L
H
PU
PU
X
L
Z
Z
PU
PU
X
OPEN
Z
Z
PU
PU
OPEN
H
H
L
PD
PU
X
X
Z
Z
PU
PD
X
X
Z
Z
PD
PD
X
X
Z
Z
PU = Power Up, PD = Power Down
Table 2. Receiver Function Table
VCC1
(1)
(1)
VCC2
(1)
DIFFERENTIAL INPUT
VID = (VA – VB)
ENABLE
(RE)
OUTPUT
®)
PU
PU
–0.01 V ≤ VID
L
H
PU
PU
–0.2 V < VID < –0.01 V
L
?
PU
PU
VID ≤ –0.2 V
L
L
PU
PU
X
H
Z
PU
PU
X
OPEN
Z
PU
PU
Open circuit
L
H
PU
PU
Short Circuit
L
H
PU
PU
Idle (terminated) bus
L
H
PD
PU
X
X
Z
PU
PD
X
L
H
PU = Power Up, PD = Power Down
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PACKAGE CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER (1)
TEST CONDITIONS
MIN
Minimum air gap (Clearance)
Shortest terminal to terminal distance through air
8.34
mm
L(I02)
Minimum external tracking (Creepage)
Shortest terminal to terminal distance across the
package surface
8.1
mm
CTI
Tracking resistance (Comparative Tracking
Index)
DIN IEC 60112 / VDE 0303 Part 1
≥400
V
Minimum Internal Gap (Internal Clearance)
Distance through the insulation
0.008
mm
RIO
Isolation resistance
Input to output, VIO = 500 V, all pins on each
side of the barrier tied together creating a
two-terminal device
CIO
Barrier capacitance Input to output
CI
Input capacitance to ground
L(I01)
(1)
TYP
MAX
UNIT
>1012
Ω
VI = 0.4 sin (4E6πt)
2
pF
VI = 0.4 sin (4E6πt)
2
pF
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed circuit board do not reduce this distance.
Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation
Glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
IEC 60664-1 RATINGS TABLE
PARAMETER
TEST CONDITIONS
Basic isolation group
Material group
Installation classification
SPECIFICATION
II
Rated mains voltage ≤ 150 VRMS
I-IV
Rated mains voltage ≤ 300 VRMS
I-III
Rated mains voltage ≤ 400 VRMS
I-II
IEC 60747-5-2 INSULATION CHARACTERISTICS
(1)
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SPECIFICATION
UNIT
560
V
V
VIORM
Maximum working insulation
voltage
VPR
Input to output test voltage
Method b1, VPR = VIORM × 1.875,
100% Production test with t = 1 s, Partial discharge < 5 pC
1050
VIOTM
Transient overvoltage
t = 60 s
4000
V
RS
Insulation resistance
VIO = 500 V at TS
>109
Ω
Pollution degree
(1)
2
Climatic Classification 40/125/21
REGULATORY INFORMATION
VDE
CSA
UL
Certified according to IEC 60747-5-2
Approved under CSA Component
Acceptance Notice 5A
Recognized under 1577 Component
Recognition Program
Basic Insulation
Maximum Transient Overvoltage, 4000 VPK
Maximum Surge Voltage, 4000 VPK
Maximum Working Voltage, 560 VPK
2500 VRMS rating per CSA 60950-1-07 and
IEC 60950-1 (2nd Ed.) for products with
working voltages ≤ 280 VRMS for basic
insulation.
Single Protection, 2500 VRMS
File Number: 40016131
File Number: 220991
File Number: E181974
10
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IEC SAFETY LIMITING VALUES
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the IO can allow low resistance to ground or the supply and, without current limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system
failures.
PARAMETER
TEST CONDITIONS
IS
Safety input, output, or supply current
DW-16
TS
Maximum case temperature
DW-16
MIN
TYP
θJA = 212°C/W, VI = 5.5 V,
TJ = 170°C, TA = 25°C
MAX
UNIT
210
mA
150
°C
The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum
ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Characteristics table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity
Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum
input voltage times the current. The junction temperature is then the ambient temperature plus the power times
the junction-to-air thermal resistance.
THERMAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
Low-K Thermal Resistance (1)
168
High-K Thermal Resistance
96.1
UNIT
θJA
Junction-to-Air
θJB
Junction-to-Board Thermal Resistance
61
°C/W
θJC
Junction-to-Case Thermal Resistance
48
°C/W
PD
(1)
VCC1 = VCC2 = 5.25 V, TJ = 150°C, CL = 15 pF,
Input a 20 MHz 50% duty cycle square wave
Device Power Dissipation
°C/W
220
mW
Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages.
300
275
Safety Limiting Current - mA
250
225
200
VCC1,2 at 3.6 V
175
150
125
100
75
50
25
0
0
50
100
150
200
TC - Case Temperature - °C
Figure 14. DW-16 θJC Thermal Derating Curve per IEC 60747-5-2
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
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11
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
EQUIVALENT CIRCUIT SCHEMATICS
A Input
B Input
VCC
VCC
16V
36kW
16V
180kW
180kW
Input
36kW
Input
16V
16V
36kW
36kW
Y and Z Outputs
A and B Outputs
VCC
VCC
16V
16V
Output
Output
16V
16V
D, RE Input
VCC1
DE Input
VCC1
VCC1
VCC1
VCC1
1 MW
500W
500W
Input
Input
1 MW
VCC1
R Output
4W
Output
6.5W
12
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Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
TYPICAL CHARACTERISTICS CURVES
LOW-LEVEL OUTPUT CURRENT
vs
LOW-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT CURRENT
vs
HIGH-LEVEL OUTPUT VOLTAGE
140
-120
No Load
o
TA = 25 C
No Load
o
TA = 25 C
120
-100
IO - Output Current - mA
IO - Output Current - mA
100
80
60
40
-60
-40
-20
20
0
0
0
1
2
3
4
0
5
1
2
3
VO - Output Voltage - V
VO - Output Voltage - V
Figure 15.
Figure 16.
RMS SUPPLY CURRENT
vs
SIGNALING RATE
BUS INPUT CURRENT
vs
INPUT VOLTAGE
25
4
60
No Load
o
TA = 25 C
40
II - Bus Input Current - mA
20
RMS Supply Current - mA
-80
ICC2
15
10
ICC1
5
TA = 25°C
RE = 0 V
DE = 0 V
20
0
VCC = 3.3 V
-20
-40
0
0
200
400
600
Signaling Rate - kbps
800
1000
-60
-7
-4
-1
2
5
8
11
14
VI - Bus Input Voltage - V
Figure 17.
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
Figure 18.
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13
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
TYPICAL CHARACTERISTICS CURVES (continued)
DRIVER DIFFERENTIAL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
DRIVER PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
2.15
250
VOD, VCC = 3.3 V
200
2.05
Driver Propagation Delay - ns
VOD - Differential Output Voltage - V
2.1
2
1.95
1.9
1.85
150
100
50
1.8
1.75
0
-55
105
125
TA - Free-Air Temperature - oC
-55
105
Figure 19.
14
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125
TA - Free-Air Temperature - oC
Figure 20.
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
APPLICATION INFORMATION
Transient Voltages
Isolation of a circuit insulates it from other circuits and earth so that noise develops across the insulation rather
than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast
transients that occur after installation. The transient ratings of the ISO15 and ISO35 are sufficient for all but the
most severe installations. However, some equipment manufacturers use their ESD generators to test transient
susceptibility of their equipment, and can exceed insulation ratings. ESD generators simulate static discharges
that may occur during device or equipment handling with low-energy but high voltage transients.
Figure 21 models the ISO15 and ISO35 bus IO connected to a noise generator. CIN and RIN is capacitance or
resistance across the device and any other stray or added capacitance or resistance across the A or B pin to
GND2. CISO and RISO is the capacitance and resistance between GND1 and GND2 of the ISO15 and ISO35 plus
those of any other insulation (transformer, etc.). The stray inductance is assumed to be negligible. From this
model, the voltage at the isolated bus return is,
ZISO
VGND2 = VN
ZISO + ZIN
(1)
and will always be less than 16 V from VN. If the ISO15 and ISO35 are tested as a stand-alone device, RIN = 6 ×
104Ω, CIN = 16 × 10–12 F, RISO = 109Ω and CISO = 10–12 F.
Note from Figure 21 that the resistor ratio determines the voltage ratio at low frequency and it is the inverse
capacitance ratio at high frequency. In the stand-alone case and for low frequency,
VGND2
RISO
109
=
=
9
VN
RISO + RIN
10 + 6x104
(2)
or essentially all of noise appears across the barrier. At high frequency,
VGND2
=
VN
1
CISO
1
CISO
+
1
CIN
1
=
1 +
CISO
CIN
=
1
1 +
1
16
= 0.94
(3)
and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of
transient noise appears across the isolation barrier.
It is not recommend for the user to test equipment transient susceptibility with ESD generators, or consider
product claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed
through recessing or covering connector pins in a conductive connector shell and installer training.
A, B, Y, or Z
CIN
VN
RIN
16V
Bus Return (GND2)
CISO
RISO
System Ground (GND1)
Figure 21. Noise Model
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
Submit Documentation Feedback
15
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
REVISION HISTORY
Changes from Original (May 2008) to Revision A
Page
•
Changed L(101) Minimum air gap (Clearance) From 7.7mm To 8.34mm. ........................................................................ 10
•
Deleted CSA information from the Regulatory Information Table. ..................................................................................... 10
•
Changed From 40014131 To 40016131 ............................................................................................................................. 10
Changes from Revision A (June 2008) to Revision B
Page
•
Changed From: 4000-Vpeak Isolation To: 4000-Vpeak Isolation, 560-Vpeak VIORM UL 1577, IEC 60747-5-2 (VDE
0884, Rev 2) ......................................................................................................................................................................... 1
•
Changed Figure 13, Full-Duplex Common-Mode Transient Immunity Test Circuit .............................................................. 8
Changes from Revision B (July 2008) to Revision C
Page
•
Added added IEC......Approved ............................................................................................................................................ 1
•
Added added CSA information column back in table ......................................................................................................... 10
Changes from Revision C (December 2008) to Revision D
•
Page
Changed Propagation delay values From: μs To: ns in the DRIVER SWITCHING table .................................................... 3
Changes from Revision D (March 2009) to Revision E
Page
•
Added devices ISO15M and ISO35M to the data sheet ....................................................................................................... 1
•
Changed Description - From: The ISO15 and ISO35 are qualified for use from –40°C to 85°C. To: The ISO15M and
ISO35M have extended ambient temperature ratings of –55°C to 125°C while the ISO15 and ISO35 are specified
over –40°C to 85°C. .............................................................................................................................................................. 1
•
Added the Product Information table .................................................................................................................................... 1
•
Added Added Ambient Temp information in the RECOMMENDED OPERATING CONDITIONS table .............................. 2
•
Added ISO15M and ISO35M to the Operating junction temperature in the RECOMMENDED OPERATING
CONDITIONS table ............................................................................................................................................................... 2
•
Changed the DRIVER ELECTRICAL table, IOZ High-impedance state output current - Test Condition VY or VZ = 12
V, VCC = 0 values From: TYP = -10 , MAX = - To: TYP = -, MAX = 90. .............................................................................. 3
•
Changed the DRIVER ELECTRICAL table, IOZ High-impedance state output current - Test Condition VY or VZ = –7
V values From: TYP = -, MAX = 90 To: TYP = -10, MAX = - ............................................................................................... 3
•
Added tr, tf limits for the ISO15M ans ISO35M devices ........................................................................................................ 3
•
Added IA or IB limits for the ISO15M ans ISO35M devices ................................................................................................... 4
•
Added pulse skew limits for the ISO15M ans ISO35M devices ........................................................................................... 4
•
Added tr, tf for the ISO15M ans ISO35M devices ................................................................................................................. 4
•
Added the Driver output pins Note for Figure 1 through Figure 4 ........................................................................................ 5
•
Changed the Driver output pins Note for eFigure 5 through Figure 6 .................................................................................. 6
•
Added Note 1 to Table 1 Driver Function Table ................................................................................................................... 9
•
Added Note 1 to Table 2 Receiver Function Table .............................................................................................................. 9
•
Changed Figure 19 - replaced curves ................................................................................................................................ 14
•
Changed Figure 20 - replaced curves ................................................................................................................................ 14
16
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Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
ISO15, ISO35
ISO15M, ISO35M
SLOS580F – MAY 2008 – REVISED JANUARY 2012
www.ti.com
Changes from Revision E (April 2010) to Revision F
Page
•
Changed the FEATURES From: 4000-Vpeak 560-Vpeak VIORM per IEC....Rev 2) To: 4000-VPK VIOTM, 560-VPKVIORM,
IEC 60747-5-2 (VDE 0884, Rev 2) ....................................................................................................................................... 1
•
Changed Description From: The symmetrical isolation......interface. To; The symmetrical isolation barrier of the
device is tested to provide isolatlion of 4000 VPK per VDE and 2500 VRMS per UL and CSA between ....interface. ........... 1
•
Changed CTI From: ≥175 V To: ≥400 V ............................................................................................................................. 10
•
Changed the IEC Ratings table, Basic isolation group, specification from IIIa to II ........................................................... 10
•
Changed the Regulatory Information Table ........................................................................................................................ 10
Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M
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17
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
ISO15DW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO15
ISO15DWG4
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO15
ISO15DWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO15
ISO15DWRG4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO15
ISO15MDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO15M
ISO15MDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO15M
ISO35DW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO35
ISO35DWG4
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO35
ISO35DWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO35
ISO35DWRG4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ISO35
ISO35MDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO35M
ISO35MDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO35M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Aug-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
ISO15DWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
ISO15MDWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
ISO35DWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
ISO35MDWR
SOIC
DW
16
2000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Aug-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO15DWR
SOIC
DW
16
2000
367.0
367.0
38.0
ISO15MDWR
SOIC
DW
16
2000
367.0
367.0
38.0
ISO35DWR
SOIC
DW
16
2000
367.0
367.0
38.0
ISO35MDWR
SOIC
DW
16
2000
367.0
367.0
38.0
Pack Materials-Page 2
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