APT8024JFLL
800V 29A 0.260Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8024JFLL
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
29
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
460
Watts
Linear Derating Factor
3.68
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
116
-55 to 150
°C
300
Amps
29
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 14.5A)
TYP
MAX
UNIT
Volts
0.260
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7076 Rev C
Symbol
APT8024JFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
C iss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
tf
ID = 29A @ 25°C
RG = 0.6Ω
4
INDUCTIVE SWITCHING @ 25°C
605
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 533V, VGS = 15V
6
ID = 29A, RG = 5Ω
490
INDUCTIVE SWITCHING @ 125°C
975
VDD = 533V VGS = 15V
ID = 29A, RG = 5Ω
UNIT
pF
155
160
24
105
9
5
23
ID = 29A @ 25°C
Turn-off Delay Time
MAX
4670
860
VDD = 400V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
nC
ns
µJ
585
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
29
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
116
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -29A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.7
IRRM
Peak Recovery Current
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
22
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.27
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.20
0.7
0.15
0.5
Note:
0.10
0.3
t1
t2
0.05
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7076 Rev C
5-2006
0.3
D = 0.9
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 5.95mH, RG = 25Ω, Peak IL = 29A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.225
0.00361
Dissipated Power
(Watts)
0.0246
0.406
148.0
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
TC ( C)
ZEXT
TJ ( C)
0.0409
80
60
40
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
ID, DRAIN CURRENT (AMPERES)
40
7V
30
6.5V
20
6V
10
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
D
V
2.0
1.10
1.05
1.00
0.95
0.90
-50
1.2
= 15.5A
GS
= 10V
1.5
1.0
0.5
0.0
-50
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
NORMALIZED TO
= 10V @ 15.5A
GS
1.30
1.15
30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
7.5V
50
1.1
1.0
0.9
0.8
5-2006
0
60
8V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7076 Rev C
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
VGS =15 &10 V
70
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
20
APT8024JFLL
80
10,000
100µS
10
1mS
5
= 29A
D
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Coss
100
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
50
0
APT8024JFLL
20,000
114
140
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
td(off)
120
V
DD
R
70
G
= 533V
= 5Ω
T = 125°C
100
V
DD
R
G
80
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
J
60
= 5Ω
T = 125°C
J
L = 100µH
60
40
50
tf
40
30
tr
20
20
0
L = 100µH
10
td(on)
0
10
0
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
2000
V
DD
R
G
V
= 533V
I
3500
= 5Ω
diode reverse recovery.
1000
Eon
500
Eoff
10
15
20
25 30 35 40 45 50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
5-2006
050-7076 Rev C
L = 100µH
5
= 533V
= 29A
J
J
E ON includes
0
DD
D
20
T = 125°C
T = 125°C
1500
10
L = 100µH
EON includes
3000
Eoff
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8024JFLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
td(on)
90%
td(off)
Drain Current
T = 125 C
J
Drain Voltage
90%
t
f
tr
5%
5%
10 %
10%
Drain Current
Drain Voltage
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2006
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7076 Rev C
7.8 (.307)
8.2 (.322)