MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE CM400DU-24F ● IC ................................................................... 400A ● VCES .......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 10 110 ±0.25 43.8 13.8 11.5 (26) Tc measured point 14.5 9 (26) E2 (26) G2 20.4 10 36 130 40 4-M4 NUTS Tc measured point G1 4-φ6.5MOUNTING E2 G2 HOLES C2E1 E2 C1 RTC G1 E1 +1 35 -0.5 +1 24.5 -0.5 RTC 8 65 3-M8 NUTS 14.5 E1 (15) 110 ±0.25 C1 E2 C2E1 20 (15) CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 400 800 400 800 1100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Unit V V A A A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 2 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — 1.8 1.9 — — — 4400 — — — — — 23.6 — — — 0.010 — 80 2.4 — 160 6.8 4.0 — 450 200 1000 300 550 — 3.2 0.11 0.13 µA 0.045*3 µC V K/W K/W K/W K/W 3.1 — 15 Ω VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage RG External gate resistance Thermal resistance*1 Contact thermal resistance Thermal resistance Tj = 25°C Tj = 125°C IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 3.1Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips mA V nF nF nF nC ns ns ns ns ns — Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE=20V 600 500 400 8.5 300 200 8 100 0 0.5 1 1.5 2 2.5 3 3.5 VGE = 15V 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 200 400 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4 3 IC = 800A IC = 400A 2 IC = 160A 1 0 6 8 10 12 14 16 18 3 2 102 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 SWITCHING TIMES (ns) 3 2 Cies 102 7 5 3 2 101 7 5 3 2 Tj = 25°C 7 5 101 20 103 CAPACITANCE Cies, Coes, Cres (nF) 3 0 4 EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 700 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 9.5 11 10 9 15 Tj=25°C COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 800 Coes VGE = 0V Cres 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 5 3 2 7 5 3 2 tf td(on) 102 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load tr 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(off) 103 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 103 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) trr Irr 102 1 7 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) 10–5 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 7 10–1 100 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.11K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.13K/W 10–1 7 5 3 2 3 2 10–2 7 5 3 2 10–3 100 7 5 3 2 Single Pulse TC = 25°C 10–1 2 3 5 7 100 2 3 5 7 101 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 400A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) Feb. 2009 4