HER301 THRU HER308 HD ZC84 DO-27 Plastic-Encapsulate Diodes High Efficient Rectifier Features ●Io 3.0A DO-2 7 ●VRRM 50V-1000V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● HER30X X:From 1 to 8 HER30 Symbol Unit Item 8 300 I V VRMS Maximum RMS Voltage 35 70 140 210 280 420 560 IF(AV) 60Hz Half-sine wave, Resistance load, Ta=50℃ 3 IFSM 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 700 Electrical Characteristics (Ta=25℃ Unless otherwise specified) HER30 Item Peak Forward Voltage Peak Reverse Current Reverse Recovery time Thermal Resistance(Typical) Symbol Unit VFM V IRRM1 IRRM2 trr μA ns RθJ-A Test Condition IFM=3.0A VRM=VRRM 1 2 3 1.0 5 1.3 Ta=25℃ Ta=125℃ IF=0.5A IR=1A IRR=0.25A 4 6 7 8 1.7 5 50 50 75 Between junction and ambient 20 Between junction and lead 10 ℃/W RθJ-L High Diode Semiconductor 1 FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1 : FORWARD CURRENT DERATING CURVE 3.0 IFSM(A) IO(A) Typical Characteristics 2.25 200 170 8.3ms Single Half Sine Wave JEDEC Method 140 110 1.5 90 60 0.75 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length 30 0 0 0 100 50 150 Ta(℃) IR(uA) IF(A) FIG.3 : TYPICAL FORWARD CHARACTERISTICS 20 HER301-HER303 1 2 10 20 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 10 HER304-HER305 100 4.0 HER306-HER308 2.0 Tj=125℃ 10 1.0 0.4 Tj=100℃ 0.2 1.0 0.1 Tj=25℃ TJ=25℃ Pulse width=300us 1% Duty Cycle 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 1.8 20 40 60 80 100 VF(V) Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 .052(1.30) .044(1.10) .197(5.00) 0.96(24.5) MIN .220(5.60) 0.96(24.5) MIN .335(8.50) .375(9.50) DO-27 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4